Chip carrier with electrically conductive layer extending beyond thermally conductive dielectric sheet

Abstract

A chip carrier which comprises a thermally conductive and electrically insulating sheet, a first electrically conductive structure on a first main surface of the sheet, and a second electrically conductive structure on a second main surface of the sheet, wherein the first electrically conductive structure and the second electrically conductive structure extend beyond a lateral edge of the sheet.

Claims

1. A chip carrier, comprising: a thermally conductive and electrically insulating sheet; a first electrically conductive structure on a first main surface of the sheet; a second electrically conductive structure on a second main surface of the sheet; wherein the first electrically conductive structure and the second electrically conductive structure extend beyond a lateral edge of the sheet such that a recess or an undercut is formed at a lateral edge of a stack composed of the sheet, the first electrically conductive structure and the second electrically conductive structure.

2. The chip carrier according to claim 1, wherein at least one of the first electrically conductive structure and the second electrically conductive structure has a larger surface area than the sheet.

3. The chip carrier according to claim 1, wherein at least one of the first electrically conductive structure and the second electrically conductive structure has a larger thickness than the sheet.

4. The chip carrier according to claim 1, wherein the first electrically conductive structure comprises at least one mounting area configured for mounting at least one electronic chip.

5. The chip carrier according to claim 4, wherein the first electrically conductive structure additionally comprises at least one further functional element.

6. The chip carrier according to claim 5, wherein the at least one further functional element comprises at least one lead for electrically connecting the at least one electronic chip.

7. The chip carrier according to claim 1, wherein the second electrically conductive structure is configured as a continuous layer.

8. The chip carrier according to claim 1, wherein the recess or the undercut extends around a perimeter of the chip carrier.

9. The chip carrier according to claim 1, comprising a guide frame integrally formed with the first electrically conductive structure and carrying the first electrically conductive structure.

10. A package, comprising: a chip carrier according to claim 1; at least one electronic chip mounted on the first electrically conductive structure of the chip carrier; an encapsulant encapsulating at least part of the at least one electronic chip and at least part of the chip carrier.

11. The package according to claim 10, comprising a further chip carrier mounted on or above the at least one electronic chip on a side opposing the chip carrier.

12. The package according to claim 11, wherein the further chip carrier is a chip carrier according to claim 1.

13. The package according to claim 11, comprising at least one spacer body between the at least one electronic chip and the further chip carrier.

14. The package according to claim 10, wherein the second electrically conductive structure of at least one of the chip carrier and the further chip carrier forms part of an exterior surface of the package.

15. The package according to claim 10, configured for double-sided cooling.

16. The package according to claim 10, wherein at least one lead of the first electrically conductive structure of the chip carrier extends beyond the encapsulant.

17. The package according to claim 10, wherein the encapsulant extends into the undercut or the recess.

18. The package according to claim 10, wherein at least one lead of the first electrically conductive structure of the chip carrier is electrically connected with the at least one electronic chip.

19. A method of manufacturing a chip carrier, wherein the method comprises: interconnecting a thermally conductive and electrically insulating sheet, a first electrically conductive structure on a first main surface of the sheet, and a second electrically conductive structure on a second main surface of the sheet; configuring the first electrically conductive structure and the second electrically conductive structure to extend beyond a lateral edge of the sheet, such that a recess or an undercut is formed at a lateral edge of a stack composed of the sheet, the first electrically conductive structure and the second electrically conductive structure.

20. The method according to claim 19, wherein the method comprises providing a connecting medium between the sheet and at least one of the first electrically conductive structure and the second electrically conductive structure.

21. The method according to claim 20, wherein the connecting medium comprises a solder material.

22. The method according to claim 19, wherein the interconnecting comprises heating.

23. The method according to claim 19, wherein the method comprises providing a guide frame integrally formed with the first electrically conductive structure and carrying the first electrically conductive structure before the interconnecting and removing the guide frame from the manufactured chip carrier after formation of a package using the chip carrier.

24. The method according to claim 19, wherein the method comprises roughening at least one of the first electrically conductive structure and the second electrically conductive structure.

25. A method of manufacturing a package, wherein the method comprises: providing a chip carrier according to claim 1; mounting at least one electronic chip on the first electrically conductive structure of the chip carrier; encapsulating at least part of the at least one electronic chip and at least part of the chip carrier by an encapsulant.

26. A vehicle, comprising a chip carrier according to claim 1.

27. A method of using a package according to claim 10 for an automotive application.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0044] The accompanying drawings, which are included to provide a further understanding of exemplary embodiments and constitute a part of the specification, illustrate exemplary embodiments.

[0045] In the drawings:

[0046] FIG. 1 to FIG. 3 show cross-sectional views of structures obtained during manufacturing a chip carrier according to an exemplary embodiment.

[0047] FIG. 4 shows an exploded view of components of a pre-form of a chip carrier according to an exemplary embodiment of the invention.

[0048] FIG. 5 shows a three-dimensional view of a chip carrier according to an exemplary embodiment of the invention.

[0049] FIG. 6 shows a three-dimensional view of a chip carrier according to an exemplary embodiment of the invention with mounted electronic chips.

[0050] FIG. 7 shows the chip carrier according to FIG. 6 with spacer bodies on the electronic chips.

[0051] FIG. 8 shows the structure according to FIG. 7 with a further chip carrier attached thereon.

[0052] FIG. 9 shows a three dimensional view of a chip carrier according to an exemplary embodiment of the invention which has already electronic chips mounted thereon but has still a temporary guide frame being connected to and supporting a first electrically conductive structure of the chip carrier.

[0053] FIG. 10 shows a three-dimensional view of a package according to an exemplary embodiment of the invention.

[0054] FIG. 11 shows a three-dimensional cross-sectional view of the package according to FIG. 10.

[0055] FIG. 12 shows a cross-sectional view of the package according to FIG. 10 and FIG. 11.

[0056] FIG. 13 illustrates schematically a vehicle comprising a power package according to an exemplary embodiment of the invention.

DETAILED DESCRIPTION OF EXEMPLARY EMBODIMENTS

[0057] The illustration in the drawing is schematically.

[0058] Before describing further exemplary embodiments in further detail, some basic considerations of the present inventors will be summarized based on which exemplary embodiments have been developed which provide for an efficient cooling of a simply manufacturable package.

[0059] According to an exemplary embodiment of the invention, a minimal substrate for double-sided cooling packages is provided.

[0060] Conventional chip carriers are, among others, Direct Copper Bonding substrates (DCB), Insulated Metal Substrates (IMS), etc. However, with all these concepts, heat removal in a package with an encapsulated chip is accomplished only via one side. For power semiconductor applications, this may not be sufficient. Furthermore, the cost for such conventional chip carriers is high due to the high cost of a required large area of a thermally conductive structure of the mentioned and other substrates.

[0061] According to an exemplary embodiment of the invention, a package is provided which may be preferably configured in a double-sided cooling architecture. Highly preferable, such a package may be manufactured based on a chip carrier which has one or two electrically conductive structures on opposing main surfaces of a thermally conductive and electrically insulating sheet which extend beyond the lateral limits of the sheet. Such a chip carrier allows to decouple the size of the thermally conductive and electrically insulating sheet from the dimension of the metallic carrier foils, i.e. the electrically conductive structures. Thus, an increase of the usable electrically conductive surface of such a chip carrier is achievable without an increase of the required amount of thermally conductive and electrically insulating material. This saves costs and allows to manufacture compact packages. Furthermore, it is possible with such an architecture to reduce the number of required individual parts of a package, since the functionality of at least two conventionally separate elements can be combined or integrated in one of the electrically conductive structures with extended area. For instance, such an electrically conductive structure may simultaneously serve as a mounting base for the electronic chip(s) and to provide one or more leads extending beyond an encapsulant of a package using such a chip carrier. Furthermore, the chip carrier architecture according to an exemplary embodiment of the invention allows for a full decoupling of the individual sheets or layers of the chip carrier.

[0062] According to an exemplary embodiment, a chip carrier is provided which is composed of three layer type structures of different functionality. One of the electrically conductive structures may be configured as a carrier of an electric potential, the other electrically conductive structure may be configured as an exterior layer of the package contributing to an efficient heat removal, and the core sheet of the thermally conductive and electrically insulating material may provide electrical isolation and may also contribute to the removal of heat generated by the one or more electronic chips integrated within the package during operation.

[0063] Advantageously, the dielectric high performance thermal sheet is spatially smaller than the electrically conductive layers above and below. By correspondingly getting rid of constraints or limitations in terms of a possible size of one or both of the electrically conductive structures, it is possible to integrate at least one further function in such a spatially expanded electrically conductive structure. For instance, such an additional function may be a replacement of a leadframe. Therefore, such an electrically conductive structure may form at least part of the encapsulant external contacts or leads of the readily manufactured package. Such leads may be power pins and/or signal pins.

[0064] Hollow spaces or recesses formed by such an architecture with a spatially excessive chip carrier may be filled by an encapsulant such as a resin type encapsulant, for example a mold compound. By taking this measure, protection of the interior of the package with regard to an environment may be achieved. Such an encapsulant filling gaps, spaces, voids or recesses may also provide a reliable electric isolation in the filled volume in order to provide a dielectric decoupling between copper areas which can be used for redistribution and/or heat spreading.

[0065] With the chip carrier architecture according to exemplary embodiments of the invention, it is possible to manufacture three-dimensional chip carriers at reasonable effort, wherein dimension and/or thickness of the electrically conductive structures (in particular copper layers) are substantially independent of the size of the sandwiched thermally highly conductive insulating material.

[0066] According to an exemplary embodiment of the invention, a package (in particular implementing double-sided cooling, wherein single-sided cooling is possible in other embodiments as well) may be provided, in which the thermally highly conductive sheet(s) above the at least one chip and/or below the at least one chip is or are configured so that they have a smaller area than its inner and outer electrically conductive cover structures or layers. These electrically conductive structures may be used for electrical redistribution tasks and/or for heat spreading.

[0067] A volume between the electrically conductive structures can be advantageously filled partially or entirely with an appropriate encapsulant such as a mold component (for instance based on an epoxy resin). The encapsulant may at least partially define the outline of the package.

[0068] In contrast to conventional approaches (in which a separate leadframe is used to electrically contact one or more electronic chips with an exterior of the encapsulated package and which may provide signal pins as well as power pins), a separate leadframe may be omitted, and its functions may be realized by part of the chip carrier, more precisely by at least one of its electrically conductive structures. In other words, the leadframe functionality may be integrated within the chip carrier or substrate, in particular by a package interior electrically conductive structure of the chip carrier. This allows to manufacture a compact package with low tendency of undesired delamination.

[0069] For example, the thermally conductive and electrically insulating sheet may be made of a ceramic material (such as aluminum oxide, silicon nitride or aluminum nitride). For instance, the thermally conductive and electrically insulating sheet may have a thermal conductivity of at least 10 W/mK, in particular of at least 50 W/mK, more particularly of at least 100 W/mK.

[0070] The material of the electrically conductive structures may be for instance copper or aluminium having both a high thermal conductivity and a high electrical conductivity.

[0071] FIG. 1 to FIG. 3 show cross-sectional views of structures obtained during manufacturing a chip carrier 100 according to an exemplary embodiment.

[0072] As can be taken from FIG. 1, starting point of the manufacturing process of manufacturing chip carrier 100 and finally package 120 is a ceramic plate constituting a thermally conductive and electrically insulating sheet 102. The thermally conductive and electrically insulating sheet 102 can be a ceramic with a high thermal conductivity and a robustness against breakage, for instance silicon nitride (Si.sub.3N.sub.4). The thickness of the thermally conductive and electrically insulating sheet 102 can be selected in accordance with a voltage breakthrough performance required by a certain application. Also, the thickness of the thermally conductive and electrically insulating sheet 102 may be selected in accordance with a required gap or space between two opposing electrically conductive structures 104, 106 to be applied on the two opposing main surfaces of the thermally conductive and electrically insulating sheet 102 (see FIG. 4). Also the mold flow behaviour of an encapsulant material used for encapsulation of the package 120 may be considered for the selection of the thickness.

[0073] Referring to FIG. 2, a connecting medium 128 is applied on both opposing main surfaces of the thermally conductive and electrically insulating sheet 102. Later, the connecting medium 128 will be provided between the sheet 102 and each of the first electrically conductive structure 104 and the second electrically conductive structure 106.

[0074] As can be taken from FIG. 2, the two opposing main surfaces of the sheet 102 are covered by layer sections of the connecting medium 128. The thermally conductive and electrically insulating sheet 102 shown in FIG. 2 may be used for manufacturing multiple chip carriers 100, wherein each pair of opposing layer sections of the connection medium 128 corresponds to one chip carrier 100, compare FIG. 3. The connection medium 128 may be applied to the respective surface portions of the thermally conductive and electrically insulating sheet 102 by screen printing. As can be taken from FIG. 2, double-sided coverage of the thermally conductive and electrically insulating sheet 102 by the connection medium 128 is accomplished. In order to promote adhesion with subsequently applied copper material, the connection medium 128 may comprise a solder material (such as silver) as well as an adhesion promoting contribution (for instance titanium). Printing of the connection medium 128 on the two opposing main surfaces of the thermally conductive and electrically insulating sheet 102 may be carried out in accordance with the positions of the later applied copper material. A negative aperture may be adjusted, so that the printed regions of connection medium 128 may be smaller than the copper structures applied thereafter.

[0075] Care should be taken that the material of the connection medium 128 does not cover undesired surface portions of the thermally conductive and electrically insulating sheet 102, so that a reliable galvanic separation between the two opposing electrically conductive structures 104, 106 can be ensured. Any remaining exposed material of the connection medium 128 may be removed after mounting the electrically conductive structures 104, 106 on the two opposing main surfaces of the thermally conductive and electrically insulating sheet 102.

[0076] After this printing procedure, the structure shown in FIG. 2 can be singularized in a plurality of separate pieces, wherein each of the pieces may serve as a basis for manufacturing a respective chip carrier 100. FIG. 3 shows the result of such a singularization procedure. For singularizing the semifinished product shown in FIG. 2, trenches may be sawn by a laser, and the resulting structure may be singularized by breaking it into the separate pieces shown in FIG. 3. When rough side surfaces are formed by such a breaking procedure, this has an additional advantageous effect on the adhesion with an encapsulant material in a later encapsulation procedure.

[0077] FIG. 4 shows an exploded view of components of a pre-form of a chip carrier 100 according to an exemplary embodiment of the invention.

[0078] Referring to FIG. 4, the thermally conductive and electrically insulating sheet 102 (which may be made of a ceramic, for instance aluminum oxide, silicon nitride, aluminum nitride) is interconnected with first electrically conductive structure 104 (which is here embodied as a patterned copper sheet, including a mounting area 108 with four mounting bases 111 for mounting four electronic chips 110, signal pins 113 and power pins 115 as well as an auxiliary guide frame 116) with the connection medium 128 in between. The guide frame 116 serves as temporary carrier for the electrically conductive structure 104 and provides stability during the manufacturing process. This is contrary to conventional Direct Copper Bonding (DCB) substrates, in which a ceramic sheet serves as a carrier for two copper sheets. Furthermore, the thermally conductive and electrically insulating sheet 102 is interconnected on its other main surface with second electrically conductive structure 106 (which is here embodied as a continuous copper sheet) with the connection medium 128 in between. The first electrically conductive structure 104 may for instance be a stamping part, for instance made of copper. The second electrically conductive structure 106 may for instance be a planar continuous metal sheet, for example a copper sheet. The connection medium 128 contributes to a proper interconnection between the mentioned constituents. As can be taken from FIG. 4, both the first electrically conductive structure 104 and the second electrically conductive structure 106 extend beyond an outer lateral edge of the sheet 102 and each have a larger surface area than the thermally conductive and electrically insulating sheet 102. The described interconnecting procedure may be accomplished by heating in a vacuum environment or in a protection gas atmosphere. The guide frame 116 carries the mounting area 108 and the signal pins 113 and the power pins 115 of the first electrically conductive structure 104 before the interconnecting. After completing formation of package 120, the guide frame 116 may be separated from the mounting area 108 and the signal pins 113 and the power pins 115 of the first electrically conductive structure 104. Thus, the guide frame 116 can be denoted as a temporary carrier integrally formed with the mounting area 108 and the signal pins 113 and the power pins 115 prior to the separation. Hence, the guide frame 116 may be separated from the manufactured chip carrier 100 later.

[0079] The guide frame 116 temporarily, i.e. only during a part of the manufacturing procedure, carries the first electrically conductive structure 104, with which the guide frame 116 can be integrally formed. Alternatively, the guide frame 116 and the first electrically conductive structure 104 may be formed as separate structures. For the purpose of temporarily carrying the first electrically conductive structure 104, the guide frame 116 has a central hole 118 delimited by an annular structure, wherein the first electrically conductive structure 104 is exposed to the sheet 102 in the region of the central hole 118.

[0080] As can be taken from FIG. 4, the procedure of FIG. 1 to FIG. 3 continues by forming a layer stack of the thermally conductive and electrically insulating sheet 102 as well as the electrically conductive structures 104, 106. Advantageously, a surface area and lateral extension of the thermally conductive and electrically insulating layer structure 102 are smaller than the surface area and the lateral extension of the electrically conductive structures 104, 106. It is therefore possible that relatively thick electrically conductive structures 104 are used, for instance copper sheets with a thickness of 0.8 mm. The use of asymmetric copper layers is possible. By allowing the lateral extension of the electrically conductive structures 104, 106 to exceed the lateral extension of the thermally conductive and electrically insulating sheet 102, it is possible to freely select the dimension of one or both of the electrically conductive structures 104, 106 in accordance with requirements of an external cooling system. Such requirements relate to cooling surface and corresponding sealing requirements. The dimension of the interior copper layer, i.e. first electrically conductive structure 104, is influenced by the dimension of the one or more electronic chips 110 to be mounted thereon. Also the guiding paths of electric current and of signals as well as required isolation distances can be considered for such a design. It is also possible to design the interior copper layer, i.e. first electrically conductive structure 104, in such a manner that additional properties, such as the provision of an external signal and current supply are met. By taking this measure, it is dispensable to implement a separate leadframe which is conventionally used in DCB substrates.

[0081] The connection of the electrically conductive structures 104, 106 made of copper with the thermally conductive and electrically insulating sheet 102 can be carried out in a vacuum oven, preferable in a protection gas atmosphere or in a reducing atmosphere in order to prevent or suppress oxidation of the mounting parts and connection materials. Thermally resistant guiding tools may be implemented which may apply a pressure on the layer stack in order to prevent undesired misalignment or the like, which may improve the result of the manufacturing process (in particular which may suppress the formation of undesired voids in an interior). Moreover, it is possible to make the chip carrier 100 under manufacture subject of a chemical treatment. Such a chemical treatment may remove excessive connection medium 128 which can accumulate on the side edges of the ceramic material of the thermally conductive and electrically insulating sheet 102. On the other hand, such a chemical treatment may render sidewalls of the ceramic structure free of metallic contaminations. Moreover, it is possible to clean, roughen and deoxidize copper surfaces. As a result of this chemical treatment, the copper surfaces of the electrically conductive structures 104, 106 are properly prepared for promoting adhesion with material of an encapsulant to be formed, for instance a mold component.

[0082] As mentioned above, the first electrically conductive structure 104 comprises central mounting area 108 (compare the four mounting bases 111) configured for mounting four electronic chips 110. As a further functional element, a periphery portion of the first electrically conductive structure 104 additionally comprises multiple leads 112 for electrically connecting the electronic chips 110. These leads 112 include signal pins 113 carrying electric signals during operation of a package 120 manufactured based on the chip carrier 100. Moreover, the leads 112 include the power pins 115 including a power pin 115 carrying a plus potential, a further power pin 115 carrying a minus potential, and yet another power pin 115 (or several such power pins 115) corresponding to one or more phase connections.

[0083] In contrast to this, the second electrically conductive structure 106 is configured as a continuous layer which forms part of an exterior surface of the readily manufactured package 120, i.e. may be exposed to an environment rather than being fully covered by encapsulation material.

[0084] FIG. 5 shows a three-dimensional view of a correspondingly manufactured chip carrier 100 according to an exemplary embodiment of the invention. FIG. 5 shows the chip carrier 100 according to FIG. 4 after assembly of its constituents 102, 104, 106, i.e. after their interconnection and after the optional chemical treatment for conditioning the chip carrier 100 for the formation of an encapsulated package 120 shown in FIG. 10 to FIG. 12. As can be taken in particular from FIG. 5, both the first electrically conductive structure 104 and the second electrically conductive structure 106 have a larger thickness than the sheet 102.

[0085] In the following, it will be described how a package 120 can be formed based on a chip carrier 100 as manufactured in accordance with FIG. 1 to FIG. 5.

[0086] FIG. 6 shows a three-dimensional view of a chip carrier 100 according to an exemplary embodiment of the invention with mounted electronic chips 110.

[0087] As can be taken from FIG. 6, the electronic chips 110 are mounted on dedicated mounting areas or mounting bases 111 on the electrically conductive structure 104. For instance, these electronic chips 110 may be insulated-gate bipolar transistor (IGBT) and diode chips. Mounting these electronic chips 110 on the first electrically conductive structure 104 may be accomplished by soldering or sintering or gluing.

[0088] After that, wire bond pads relating to the electronic chips 110 may be connected with leads 112 (in particular signal pins 113) by wire bonding, see bond wires 170 connecting the signal pins 113 (the power pins 115 may be connected correspondingly by bond wires or bond ribbons, not shown). At this point of time, the signal pins 113 are still connected with the guide frame 116.

[0089] FIG. 7 shows the chip carrier 100 according to FIG. 6 with spacer bodies 126 on the electronic chips 110.

[0090] After the wire bonding, the spacer bodies 126 are mounted on the electronic chips 110. The spacer bodies 126 serve as thermally conductive spacer elements between the electronic chips 110 and an upper chip carrier 124. In addition, two further (smaller) via spacers as further spacer bodies 126 are applied as well in order to provide for a connection between the high side and the low side. More specifically, the via spacer facing the power pins 115 serves for a connection to the low side, whereas the via spacer facing the signal pins 113 serves for a connection between the high side and the low side.

[0091] FIG. 8 shows the structure according to FIG. 7 with a further chip carrier 124 attached thereon.

[0092] On top of the spacer bodies 126, the upper chip carrier 124 (for instance embodied correspondingly to chip carrier 100, or embodied as Direct Copper Bonding substrate) is mounted, as shown in FIG. 8. The corresponding connections may be made by sintering or soldering or gluing.

[0093] FIG. 9 shows a three dimensional view of a chip carrier 100 according to an exemplary embodiment of the invention which has already electronic chips 110 mounted thereon but has still a temporary guide frame 116 being connected to and supporting a first electrically conductive structure 104 of the chip carrier 100. The guide frame 116 may be removed from the rest when encapsulation during manufacture of package 120 is completed.

[0094] FIG. 10 shows a three-dimensional view of a package 120 according to an exemplary embodiment of the invention. FIG. 11 shows a three-dimensional cross-sectional view of the package 120 according to FIG. 10. FIG. 12 shows a cross-sectional view of the package 120 according to FIG. 10 and FIG. 11.

[0095] The package 120 is composed of the chip carrier 100 on a bottom side, the further chip carrier 124 on a top side and electronic chips 110 sandwiched between the chip carrier 100 and the further chip carrier 124. More specifically, the electronic chips 110 are mounted on the first electrically conductive structure 104 of the chip carrier 100. The further chip carrier 124, which may be embodied correspondingly to the chip carrier 100 described above referring to FIG. 1 to FIG. 5 or which can be embodied as a Direct Copper Bonding (DCB) substrate, is mounted above the electronic chips 110 on a side opposing the chip carrier 100. Multiple thermally conductive spacer bodies 126, which may be embodied as copper blocks or copper pillars, are arranged vertically between the electronic chips 110 and the further chip carrier 100.

[0096] An encapsulant 122, which is here embodied as a mold compound, encapsulates the electronic chips 110, the spacer bodies 126, part of the chip carrier 100, and part of the further chip carrier 124. As can be taken from FIG. 12, the second electrically conductive structure 106 of the chip carrier 100 and the second electrically conductive structure 106 of the further chip carrier 124 form part of an exterior surface of the package 120.

[0097] In view of the described configuration with the chip carrier 100 and the further chip carrier 124, the package 120 shown in FIG. 10 to FIG. 13 is configured for double-sided cooling. Heat generated by the electronic chips 110 during operation of the package 120 may be removed from an interior of the package 120 by the chip carrier 100 via a bottom main surface of the package 120 and by the further chip carrier 124 via a top main surface of the package 120. Therefore, a highly efficient cooling may be accomplished.

[0098] As can be taken best from FIG. 10, the above described leads 112 of the first electrically conductive structure 104 of the chip carrier 100 extend beyond the encapsulant 122 so that the package 120 can be electrically connected to an electronic periphery.

[0099] FIG. 10 is a three-dimensional view of the readily manufactured package 120 after encapsulation with an encapsulant 122. Thus, the exterior shape or outline of the package 120 is defined in a molding procedure. A second task of the mold compound constituting the encapsulant 122 is to fill all regions of the package 120 without voids in order to protect an interior of the package 120 with regard to environmental influences. This also accomplishes a sufficient isolation between the various copper structures in an interior and the exterior of the package 120. Such a mold compound may be selected so as to reliably electrically isolate at a voltage of 10 kV and at a material thickness of 200 m.

[0100] Although not shown in the figures, the package 120 shown in FIG. 10 may then be treated by application of tin on the signal pins and on the power pins. The package 120 may then be separated from the guide frame 116 by removing the latter. It is further possible to bend the signal pins 113 and the power pins 115, if desired.

[0101] As can be seen in FIG. 12, a recess 114 or undercut is formed at a lateral edge of a stack composed of the retracted sheet 102, the first electrically conductive structure 104 and the second electrically conductive structure 106. In the readily manufactured package 120, the recess 114 or undercut may be filled by encapsulation material to further improve adhesion.

[0102] In the shown embodiment, both chip carriers 100, 124 used for one and the same package 120 having a double-sided cooling performance can be manufactured identically. Alternatively, two different chip carriers 100 may be used for such a package 120. It is also possible that only single-sided cooling is accomplished, in such an embodiment only one chip carrier 100 is used. The use of two chip carriers 100, 124 of the type shown in FIG. 4 can be advantageous when it is desired to guide also from an upper side one or more leads 112 out of the package 120. One application of such an architecture is a parallel guided DC path.

[0103] As can be taken from FIG. 12, the respective thermally conductive and electrically insulating sheet 102 is interrupted in a central position in both the carrier 100 and the further carrier 124. By taking this measure, expensive ceramic material may be saved and a compact and lightweight package 120 may be obtained.

[0104] As can be taken from the above description, the provided manufacturing architecture for forming chip carrier 100 and package 120 is an integrated solution in which the electrically conductive structures 104, 106 are applied on the thermally conductive and electrically insulating sheet 102 during the manufacturing process. Moreover, the electrically conductive structures 104, 106 may be configured to provide one or more additional functions, such as pins extending beyond the encapsulant 122, a guide frame function (see reference numeral 116), etc. It is also possible to integrate a transport frame function and/or a sealing frame function during the manufacturing procedure.

[0105] The package 120 shown in FIG. 10 to FIG. 12 relates to a 700 V one-phase inverter. For further simplifying the manufacturing procedure, multiple electronic chips 110 can be connected, via a carrier frame, to a substrate strip. The guide frame 116, which is later removed, may form part of the upper chip carrier 100. It may provide support during transport and manufacturing process. Although a specific manufacturing procedure has been described above, other manufacturing procedures are possible as well which accomplish a reliable connection between the copper structures and the ceramic sheet.

[0106] FIG. 13 illustrates schematically a vehicle 130 comprising a power package 120 according to an exemplary embodiment of the invention. More specifically, the power package 120 may form part of a control block 152 controlling operation of engine/battery block 154. Hence, a package 120 or power module according to an exemplary embodiment of the invention may be used for an automotive application. A preferred application of such a power package 120 is an implementation as an inverter circuit or inverted rectifier for vehicle 130 which may be an electrically driven vehicle or which may be a hybrid vehicle. Such an inverter may transfer a direct current (DC) of the battery into an alternating current (AC) for driving the electric engine of vehicle 130. In a hybrid vehicle, it is also possible to at least partially recover mechanical energy and to transfer it, by the inverter, back into electric energy to recharge the battery. In such an automotive inverter application, extreme amounts of heat are generated during operation of the power module 120. This heat can be efficiently removed by the double-sided cooling concept according to FIG. 1 to FIG. 6. However, it should be said that, in other embodiments, also single-sided cooling may be sufficient.

[0107] It should be noted that the term comprising does not exclude other elements or features and the a or an does not exclude a plurality. Also elements described in association with different embodiments may be combined. It should also be noted that reference signs shall not be construed as limiting the scope of the claims. Moreover, the scope of the present application is not intended to be limited to the particular embodiments of the process, machine, manufacture, composition of matter, means, methods and steps described in the specification. Accordingly, the appended claims are intended to include within their scope such processes, machines, manufacture, compositions of matter, means, methods, or steps.