INTEGRATED CIRCUIT WITH RESURF REGION BIASING UNDER BURIED INSULATOR LAYERS

Abstract

Complementary high-voltage bipolar transistors in silicon-on-insulator (SOl) integrated circuits is disclosed. In one disclosed embodiment, a collector region is formed in an epitaxial silicon layer disposed over a buried insulator layer. A base region and an emitter are disposed over the collector region. An n-type region is formed under the buried insulator layer (BOX) by implanting donor impurity through the active region of substrate and BOX into a p-substrate. Later in the process flow this n-type region is connected from the top by doped poly-silicon plug and is biased at Vcc. In this case it will deplete lateral portion of PNP collector region and hence, will increase its BV.

Claims

1. An integrated circuit, comprising: a semiconductor substrate having a surface; a first region along the surface, the first region having a first conductivity type; an insulator layer under the first region; a second region under the insulator layer, the second region having a second conductivity type opposite to the first conductivity type; and a conductive path having a first end extending from the surface, and a second end extending below the insulator layer and reaching the second region.

2. The integrated circuit of claim 1, further comprising: a trench structure extending from the surface and reaching the insulator layer, the trench structure insulating the first region from the conductive path.

3. The integrated circuit of claim 1, further comprising: a trench structure extending from the surface and reaching the insulator layer, the trench structure encircling the first region.

4. The integrated circuit of claim 1, further comprising: first and second trench structures, each extending from the surface and reaching the insulator layer, wherein the conductive path positioned between the first and second trench structures and has a greater depth than each one of the first and second trench structures.

5. The integrated circuit of claim 1, wherein: the first conductivity type includes a p-type; the second conductivity type includes an n-type; and the conductive path includes an n-type poly-silicon plug.

6. The integrated circuit of claim 1, wherein: the first conductivity type includes an n-type; the second conductivity type includes a p-type; and the conductive path includes a p-type poly-silicon plug and a p-type contact region interfacing the second end with the second region.

7. The integrated circuit of claim 1, wherein: the semiconductor substrate has the first conductivity type; and the second region includes a buried doped region having the second conductivity type.

8. The integrated circuit of claim 1, wherein: the semiconductor substrate has the second conductivity type; and the second region includes a buried doped region having a higher doping concentration than the semiconductor substrate.

9. The integrated circuit of claim 1, wherein: the semiconductor substrate has the second conductivity type; and the second region includes a same doping concentration as the semiconductor substrate.

10. The integrated circuit of claim 1, further comprising: a bipolar transistor having: a collector layer in the first region, the collector layer having the first conductivity type; a base layer above the collector layer, the base layer having the second conductivity type; and an emitter layer above the base layer, the emitter layer having the first conductivity type.

11. An integrated circuit, comprising: a semiconductor substrate having a surface; a bipolar transistor having collector region under and near the surface, the collector region having a first conductivity type; an insulator layer directly under the collector region; a doped region under the insulator layer, the doped region having a second conductivity type opposite to the first conductivity type; a conductive path having a first end extending from the surface, and a second end extending below the insulator layer and reaching the doped region; and a trench structure extending from the surface and reaching the insulator layer, the trench structure encircling the collector region and insulating the collector region from the conductive path.

12. The integrated circuit of claim 11, wherein: the first conductivity type includes a p-type; the second conductivity type includes an n-type; and the conductive path includes an n-type poly-silicon plug.

13. The integrated circuit of claim 12, further comprising: a first terminal configured to receive a first voltage supply (GND); a second terminal configured to receive a second voltage supply (VCC) higher than the first voltage supply (GND), the second terminal coupled to the n-type poly-silicon plug.

14. The integrated circuit of claim 11, wherein: the first conductivity type includes an n-type; the second conductivity type includes a p-type; and the conductive path includes a p-type poly-silicon plug and a p-type contact region interfacing the second end with the doped region.

15. The integrated circuit of claim 14, further comprising: a first terminal configured to receive a first voltage supply (VCC); a second terminal configured to receive a second voltage supply (GND) lower than the first voltage supply (VCC), the second terminal coupled to the p-type poly-silicon plug.

16. The integrated circuit of claim 11, wherein: the semiconductor substrate has a first doping concentration; and the doped region has a second doping concentration higher than the first doping concentration.

17. An integrated circuit, comprising: a semiconductor substrate having a surface; a first transistor having a first p-type region under and near the surface; a second transistor having a first n-type region under and near the surface; an insulator layer directly under the first p-type region and the first n-type region; a second n-type region under the insulator layer and overlapping the first p-type region; a second p-type region under the insulator layer and overlapping the first n-type region; an n-type poly-silicon plug extending from the surface and penetrating the insulator layer to reach the second n-type region; and a p-type poly-silicon plug extending from the surface and penetrating the insulator layer to reach the second p-type region.

18. The integrated circuit of claim 17, further comprising: a first trench structure extending from the surface and reaching the insulator layer, the first trench structure positioned between the first p-type region and the n-type poly-silicon plug; and a second trench structure extending from the surface and reaching the insulator layer, the second trench structure positioned between the first n-type region and the p-type poly-silicon plug.

19. The integrated circuit of claim 17, further comprising: a first trench structure extending from the surface and reaching the insulator layer, the first trench structure separately encircling the first p-type region and the n-type poly-silicon plug; and a second trench structure extending from the surface and reaching the insulator layer, the second trench structure separately encircling the first n-type region and the p-type poly-silicon plug.

20. The integrated circuit of claim 17, further comprising: a first terminal configured to receive a first voltage supply (VCC), the first terminal coupled to the n-type poly-silicon plug; a second terminal configured to receive a second voltage supply (GND) lower than the first voltage supply (VCC), the second terminal coupled to the p-type poly-silicon plug.

Description

DESCRIPTION OF THE VIEWS OF THE DRAWING

[0014] FIG. 1 illustrates a cross-section of an embodiment of the present disclosure.

[0015] FIG. 1A illustrates an enlarged portion of FIG. 1 detailing the NPN transistor.

[0016] FIG. 1B illustrates an enlarged portion of FIG. 1 detailing the PNP transistor.

[0017] FIG. 2 illustrates a cross-section of another embodiment of the present disclosure.

[0018] FIG. 2A illustrates an enlarged portion of FIG. 2 detailing the NPN transistor.

[0019] FIG. 2B illustrates an enlarged portion of FIG. 2 detailing the PNP transistor.

[0020] FIG. 3 illustrates the calculated dependencies of BV.sub.CER on structures with no resurf and structures including resurf.

[0021] In the drawings, like reference numerals are sometimes used to designate like structural elements. It should also be appreciated that the depictions in the figures are diagrammatic and not to scale.

DETAILED DESCRIPTION OF EXAMPLE EMBODIMENTS

[0022] The present disclosure is described with reference to the attached figures. The figures are not drawn to scale and they are provided merely to illustrate the disclosure. Several aspects of the disclosure are described below with reference to example applications for illustration. It should be understood that numerous specific details, relationships, and methods are set forth to provide an understanding of the disclosure. One skilled in the relevant art, however, will readily recognize that the disclosure can be practiced without one or more of the specific details or with other methods. In other instances, well-known structures or operations are not shown in detail to avoid obscuring the disclosure. The present disclosure is not limited by the illustrated ordering of acts or events, as some acts may occur in different orders and/or concurrently with other acts or events. Furthermore, not all illustrated acts or events are required to implement a methodology in accordance with the present disclosure.

[0023] In an embodiment of the present disclosure is shown in FIGS. 1-1B, the complementary PNP 100 and NPN 200 structures include an SOI semiconductor structure having an p-type region 101, active device regions 104 and 204 respectively, and a buried insulator layer (BOX) 103 that lies therebetween, touches, and electrically isolates p-type region 101 from the active device regions 104 and 204. The initial doping level of the active device regions 104 and 204 can be n-type, 1e14 1/cm3. In the present example, both the p-type region 101 and the active device regions 104 and 204 are implemented with single-crystal silicon. To create a structure that has higher PNP BV, an n-type region 106 is included under the buried insulator layer (BOX) of the PNP transistor 100, by implanting donor impurities with dose of about 1e13 to 1e14 1/cm2 through the active device region of the SOI wafer and BOX 103 (1.5-2 um in total) into p-type region 101. Later in the process flow this n-type region 106 and the p-type regions 101 are connected from the top by doped poly-silicon plugs and are biased at Vcc and GND respectively. Since the substrate is p-type material, GND can be applied to either the p-type region 101 or the top contact GND. In this case it will deplete lateral portions of both the PNP and NPN collector regions and hence, will increase their BVs.

[0024] The structure providing a PNP transistor 100 with a higher BV (FIG. 1B) is described below.

[0025] First an SOI wafer is provided as described in the present disclosure as shown in FIGS. 1-1B.

[0026] Next, a first masking and implant step is accomplished to create a highly (1e17 1/cm3) doped n-layer 106 under BOX 103 in PNP area. The highly doped n-layer 106 is vertically under the PNP area and extends toward an n-type poly-silicon plug 110 and couples to that plug.

[0027] A second masking and implant step after Pad Oxidation, before Nitride deposition is performed to create a uniform collector doping between 3e14-3e16 in active device region 104.

[0028] A Third masking and etching step is accomplished to provide a hard mask for defining and for deposition of an insulator layer STI 105 in the active device region 104.

[0029] Deep trenches 109 are formed to encircle the PNP transistor 100 and the n-type poly-silicon plug 110. The trenches extend from the top of the die to the bottom of the BOX 103 and the n-type poly-silicon plug extends from the top of the die to and through the BOX 103 extending into the highly doped p-layer 106 under the BOX 103, wherein the n-type poly-silicon plug touches the implanted n-layer under the BOX 103 and extends to the top of die providing a top contact to the implanted n-layer.

[0030] A base epitaxial semiconductor layer 113 is deposited, defined and doped with an impurity of the opposite conductivity type on top of the active device region 104 with base contacts 111 coupled thereto.

[0031] And finally, an emitter region 108 covers a portion of the base epitaxial semiconductor layer 113, wherein the emitter region 108 is highly doped with the same conductivity type as the active device region 104.

[0032] The structure providing an NPN transistor 200 with a high BV FIG. 1A is described below.

[0033] First an SOI wafer is provided as described in the present disclosure as shown in FIGS. 1-1B.

[0034] A first masking and implant step after Pad Oxidation, before Nitride deposition is performed to create a uniform collector doping between 3e14-3e16 1/cm3 in active device region 204.

[0035] A second masking and etching step is accomplished to provide a hard mask for defining and to for deposition of an insulator layer STI 105 in the active device region 204.

[0036] Deep trenches 109 are formed, to encircle the NPN 200 transistor and the p-type poly-silicon plug 210. The trenches extend from the top of the die to the bottom of the BOX 103 and the p-type poly-silicon plug extends from the top of the die to and through the BOX 103 extending into the p-layer 101 under the BOX 103, wherein the p-type poly-silicon plug touches the p-layer under the BOX 103 and extends to the top of die providing a top contact to the p-layer 101.

[0037] A base epitaxial semiconductor layer 213 is deposited, defined and doped with an impurity of the opposite conductivity type on top of the active device region 204 with base contacts 211 coupled thereto.

[0038] And finally an emitter region 208 covers a portion of the base epitaxial semiconductor layer 213, wherein the emitter region 208 is highly doped with the same conductivity type as the first epitaxial layer 204.

[0039] The base epitaxial semiconductor for the NPN and the PNP can be either SiGe or silicon. The base epitaxial semiconductor can also be deposited in two operations, one for the NPN and one for the PNP.

[0040] In another embodiment of the present disclosure is shown in FIGS. 2-2B, the complementary PNP 300 and NPN 400 structures include an SOI semiconductor structure having an n-type region 301, active device regions 104 and 204 respectively, and a buried insulator layer (BOX) 103 that lies between, touches, and electrically isolates n-type region 301 from the active device regions 104 and 204. The initial doping level of the active device regions 104 and 204 can be n-type, 1e14 1/cm3. In the present example, both the n-type region 301 and the active device regions 104 and 204 are implemented with single-crystal silicon. To create a structure that has higher PNP BV, an n-type region 106 is included under a buried insulator layer (BOX) 103 of the PNP 300 transistor, by implanting donor impurity of about 2e15 to 1e17 through the active device region of the SOI wafer and BOX 103 (1.5-2 um in total) into n-type region 301. In addition, a structure that yields higher NPN 400 BV, includes p-type region 406 under the buried insulator layer (BOX) 103 of the NPN transistor, by implanting accepter impurities of about 2e15 to 1e17 through the active device region 204 of the SOI wafer and BOX 103 (1.5-2 um in total) into n-type region 301. Later in the process flow, the n-type region 106 and the p-type regions 406 are connected from the top by doped poly-silicon plugs and are biased at Vcc and GND respectively. Since the substrate is n-type material, Vcc can be applied to either the n-type region 301 or the top contact Vcc. In this case it will deplete lateral portions of both the PNP and NPN collector regions and hence, will increase their BVs.

[0041] The structure providing a PNP transistor 300 with a higher BV FIG. 2B is described below.

[0042] First an SOI wafer is provided as described in the present disclosure as shown in FIGS. 2-2B.

[0043] Next, a first masking and implant step is accomplished to create a highly (1e17 1/cm3) doped n-layer 106 under BOX 103 in PNP area. The highly doped n-layer 106 is vertically under the PNP area and extends toward an n-type poly-silicon plug 110 and couples to that plug.

[0044] A second new masking and implant step after Pad Oxidation, before Nitride deposition is performed to create a uniform collector doping between 3e14-3e16 in active device region 104.

[0045] A Third masking and etching step is accomplished to provide a hard mask for defining and to for deposition of a shallow trench insulation layer STI 105 in the active device region 104.

[0046] Deep trenches 109 are formed to encircle the PNP transistor 300 and the n-type poly-silicon plug 110. The trenches extend from the top of the die to the bottom of the BOX 103 and the n-type poly-silicon plug 110 extends from the top of the die to and through the BOX 103 extending into the highly doped n-layer 106 under the BOX 103, wherein the n-type poly-silicon plug 110 touches the implanted n-layer under the BOX 103 and extends to the top of die providing a top contact to the implanted n-layer 106.

[0047] A base epitaxial semiconductor layer 113 is deposited, defined and doped with an impurity of the opposite conductivity type on top of the active device region 104 with a base contact 111 coupled thereto.

[0048] And finally an emitter region 108 covers a portion of the base epitaxial semiconductor layer 113, wherein the emitter region 108 is highly doped with the same conductivity type as the first epitaxial layer 104.

[0049] The structure providing an NPN transistor 400 with a high BV FIG. 1B is described below.

[0050] First an SOI wafer is provided as described in the present disclosure as shown in FIGS. 2-2B.

[0051] Next, a first masking and implant step is accomplished to create a highly (1e17 1/cm3) doped p-layer 406 under BOX 103 in NPN area. The highly doped p-layer 106 is vertically under the NPN area and extends toward a p-type poly-silicon plug 210 and couples to that plug.

[0052] A second new masking and implant step after Pad Oxidation, before Nitride deposition is performed to create a uniform collector doping between 3e14-3e16 1/cm3 in active device region 204.

[0053] A Third masking and etching step is accomplished to provide a hard mask for defining and to for deposition of an insulator layer STI 105 in the active device region 204.

[0054] Deep trenches 109 are formed, to encircle the NPN 400 transistor and the p-type poly-silicon plug 210. The trenches extend from the top of the die to the bottom of the BOX 103 and the p-type poly-silicon plug 210 extends from the top of the die to and through the BOX 103 extending into the highly doped p-layer 406 under the BOX 103, wherein the p-type poly-silicon plug 210 touches the implanted p-layer 406 under the BOX 103 and extends to the top of die providing a top contact to the implanted p-layer 406.

[0055] A base epitaxial semiconductor layer 213 is deposited, defined and doped with an impurity of the opposite conductivity type on top of the active device region 204 with base contacts 211 coupled thereto.

[0056] And finally an emitter region 208 covers a portion of the base epitaxial semiconductor layer 213, wherein the emitter region 208 is highly doped with the same conductivity type as the first epitaxial layer 204.

[0057] The base epitaxial semiconductor for the NPN and the PNP can be either SiGe or silicon. The base epitaxial semiconductor can also be deposited in two operations, one for the NPN and one for the PNP.

[0058] FIG. 3 shows the dependencies of BV.sub.CER f.sub.T on the resurf n-layer. Calculated dependences of BV.sub.CER (solid lines) and f.sub.Tpeak at V.sub.CE=10V (dashed lines) for PNP with lateral collector with (diamonds) and without (triangles) resurf N-layer. Note that without N-region, PNP BV saturates at 38V while with N-region it goes beyond 100V.

[0059] While various embodiments of the present disclosure have been described above, it should be understood that they have been presented by way of example only and not limitation. Numerous changes to the disclosed embodiments can be made in accordance with the disclosure herein without departing from the spirit or scope of the disclosure. Thus, the breadth and scope of the present disclosure should not be limited by any of the above described embodiments. Rather, the scope of the disclosure should be defined in accordance with the following claims and their equivalents.