ENCAPSULATION FILM AND ORGANIC ELECTRONIC DEVICE COMPRISING THE SAME (As Amended)
20170166715 ยท 2017-06-15
Inventors
- Ban Seok Choi (Daejeon, KR)
- Hyun Jee Yoo (Daejeon, KR)
- Hyun Suk Kim (Daejeon, KR)
- Seung Min Lee (Daejeon, KR)
- Jung Ok Moon (Daejeon, KR)
- Se Woo Yang (Daejeon, KR)
Cpc classification
H10K71/00
ELECTRICITY
B32B27/322
PERFORMING OPERATIONS; TRANSPORTING
B32B27/304
PERFORMING OPERATIONS; TRANSPORTING
H10K85/111
ELECTRICITY
B32B2255/10
PERFORMING OPERATIONS; TRANSPORTING
H10K2102/00
ELECTRICITY
B32B2307/40
PERFORMING OPERATIONS; TRANSPORTING
C08J2363/00
CHEMISTRY; METALLURGY
B32B27/306
PERFORMING OPERATIONS; TRANSPORTING
B32B17/00
PERFORMING OPERATIONS; TRANSPORTING
Y02E10/549
GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
C08L63/00
CHEMISTRY; METALLURGY
B32B15/082
PERFORMING OPERATIONS; TRANSPORTING
B32B27/308
PERFORMING OPERATIONS; TRANSPORTING
H10K50/818
ELECTRICITY
B32B15/20
PERFORMING OPERATIONS; TRANSPORTING
B32B2457/206
PERFORMING OPERATIONS; TRANSPORTING
H10K50/828
ELECTRICITY
H10K50/865
ELECTRICITY
International classification
Abstract
Provided are an encapsulation film, an organic electronic device comprising the same, and a method of manufacturing the organic electronic device. When the organic electronic device is encapsulated using the encapsulation film, an excellent moisture barrier property may be realized, and as reflection or scattering of light is prevented by absorbing and blocking internal or external light, external defects of the organic electronic device may be prevented.
Claims
1. An encapsulation film for an organic electronic element, comprising: a light absorbing region comprising an encapsulation resin and a light absorbing material, and having a surface resistance of 10.sup.11 /cm.sup.2 or more.
2. The film according to claim 1, wherein the light absorbing region is formed in at least one outer peripheral part of the encapsulation film.
3. The film according to claim 1, wherein the light absorbing region is formed in an entire area of the encapsulation film.
4. The film according to claim 1, which has a haze of 40% to 90%.
5. The film according to claim 1, wherein the encapsulation resin comprises an acrylic resin, an epoxy resin, a silicone resin, a fluorine resin, a styrene resin, a polyolefin resin, a thermoplastic elastomer, a polyoxyalkylene resin, a polyester resin, a polyvinylchloride resin, a polycarbonate resin, a polyphenylenesulfide resin, a polyamide resin or a mixture thereof.
6. The film according to claim 1, wherein the encapsulation resin comprises a curable resin.
7. The film according to claim 6, wherein the curable resin is a heat-curable resin.
8. The film according to claim 6, wherein the curable resin comprises at least one curable functional group selected from a glycidyl group, an isocyanate group, a hydroxyl group, a carboxyl group, an amide group, an epoxide group, a cyclic ether group, a sulfide group, an acetal group, and a lactone group.
9. The film according to claim 6, wherein the curable resin is an epoxy resin comprising a cyclic structure in a molecular structure.
10. The film according to claim 6, wherein the curable resin is a silane-modified epoxy resin.
11. The film according to claim 1, wherein the light absorbing material is a non-conductive material.
12. The film according to claim 1, wherein the light absorbing material is at least one selected from the group consisting of carbon black, carbon nanotube, fluorene, a phthalocyanine derivative, a porphyrin derivative, and a triphenylamine derivative.
13. The film according to claim 1, wherein the light absorbing material is comprised at 0.01 to 50 parts by weight with respect to 100 parts by weight of the encapsulation resin.
14. The film according to claim 1, further comprising a moisture absorbent.
15. The film according to claim 14, wherein the moisture absorbent is at least one selected from the group consisting of P.sub.2O.sub.5, Li.sub.2O, Na.sub.2O, BaO, CaO, MgO, Li.sub.2SO.sub.4, Na.sub.2SO.sub.4, CaSO.sub.4, MgSO.sub.4, CoSO.sub.4, Ga.sub.2(SO.sub.4).sub.3, Ti(SO.sub.4).sub.2, NiSO.sub.4, CaCl.sub.2, MgCl.sub.2, SrCl.sub.2, YCl.sub.3, CuCl.sub.2, CsF, TaF.sub.5, NbF.sub.5, LiBr, CaBr.sub.2, CeBr.sub.3, SeBr.sub.4, VBr.sub.3, MgBr.sub.2, BaI.sub.2, MgI.sub.2, Ba(ClO.sub.4).sub.2 and Mg(ClO.sub.4).sub.2.
16. The film according to claim 1, comprising: a light absorbing layer comprising the light absorbing region; and a moisture barrier layer.
17. The film according to claim 16, wherein the moisture barrier layer has a water vapor transmission rate (WVTR) of 50 g/m.sup.2.Math.day or less.
18. The film according to claim 1, further comprising: a metal layer.
19. The film according to claim 18, wherein the metal layer has a thermal conductivity of 50 W/mK or more.
20. The film according to claim 18, wherein the metal layer has a reflectance of 15 to 90% in Specular Component Included SCI measurement, or 15 to 80% in Specular Component Excluded SCE measurement.
21. An organic electronic device, comprising: a substrate; an organic electronic element comprising a transparent electrode layer present on the substrate, an organic layer present on the transparent electrode layer and comprising at least an emitting layer, and a reflective electrode layer present on the organic layer; and an encapsulation film encapsulating an entire surface of the organic electronic element, and comprising a light absorbing region having a surface resistance of 10.sup.11 /cm.sup.2 or more.
22. The organic electronic device according to claim 21, wherein the light absorbing region is formed in at least one outer peripheral part of the encapsulation film.
23. The organic electronic device according to claim 21, wherein the light absorbing region is formed in an entire area of the encapsulation film.
24. The organic electronic device according to claim 21, wherein the encapsulation film further comprises a metal layer.
25. A method of manufacturing an organic electronic device, comprising: forming an organic electronic element comprising a transparent electrode layer, an organic layer present on the transparent electrode layer and comprising at least an emitting layer and a reflective electrode layer present on the organic layer, on a substrate; and applying the encapsulation film of claim 1 to the substrate on which the organic electronic element is formed to encapsulate an entire surface of the organic electronic element.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
[0106]
[0107]
[0108]
DESCRIPTION OF REFERENCE NUMERALS
[0109] 1: encapsulation film [0110] 2: light absorbing layer [0111] 3: light absorbing material [0112] 4, 6: moisture barrier layer [0113] 5: moisture absorbent [0114] 10: first region (light absorbing region) [0115] 11: second region (non-light absorbing region) [0116] 21: substrate [0117] 22: cover substrate [0118] 23: organic electronic element
DETAILED DESCRIPTION OF EXEMPLARY EMBODIMENTS
[0119] Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to Examples according to the present invention and Comparative Examples not according to the present invention. However, the scope of the present invention is not limited to the embodiments which will be disclosed below.
Example 1
[0120] A carbon black dispersed solution was prepared by adding carbon black (#2600 Mitsubishi Carbon black) having a primary particle size of approximately 20 nm or less as a light absorbing material and methylethylketone (MEK) as a solvent in a solid concentration of 10 wt %. Meanwhile, a moisture absorbent solution was prepared by adding 100 g of calcined dolomite as a moisture absorbent and MEK as a solvent in a solid concentration of 50 wt %.
[0121] 200 g of a silane-modified epoxy resin (KSR-177, Kukdo Chemical Co., Ltd.) and 150 g of a phenoxy resin (YP-50, Tohto Kasei Co., Ltd.) were added to a reactor at room temperature, and diluted with MEK. A solution for a light absorbing layer was prepared by adding 4 g of an imidazole (Shikoku Chemicals Corporation) as a curing agent to the homogenized solution, and stirring the resulting solution at a high speed for 1 hour. The solution for a light absorbing layer was prepared by adding the previously prepared moisture absorbent solution to the solution to have a content of calcined dolomite of 30 parts by weight with respect to 100 parts by weight of an encapsulation resin of a light absorbing layer, adding the carbon black dispersed solution to have a carbon black content of 10 parts by weight with respect to 100 parts by weight of the encapsulation resin of the light absorbing layer, and mixing the solutions.
[0122] An encapsulation film was manufactured by forming the light absorbing layer having a thickness of 20 m by coating a releasing surface of a releasing PET film with the solution of the light absorbing layer and drying the coated solution at 130 C. for 3 minutes.
Example 2
[0123] A carbon black dispersed solution was prepared by adding carbon black (#2600 Mitsubishi Carbon black) having a primary particle size of approximately 20 nm or less as a light absorbing material and MEK as a solvent in a solid concentration of 10 wt %.
[0124] 200 g of a silane-modified epoxy resin (KSR-177, Kukdo Chemical Co., Ltd.) and 150 g of a phenoxy resin (YP-50, Tohto Kasei Co., Ltd.) were added to a reactor at room temperature, and diluted with MEK. A solution for a light absorbing layer was prepared by adding 4 g of an imidazole (Shikoku Chemicals Corporation) as a curing agent to the homogenized solution, and stirring the resulting solution at a high speed for 1 hour. The solution for a light absorbing layer was prepared by adding and mixing the previously prepared carbon black dispersed solution to the resulting solution to have a carbon black content of 10 parts by weight with respect to 100 parts by weight of an encapsulation resin of a light absorbing layer.
[0125] Meanwhile, a moisture absorbent solution was prepared by adding 100 g of calcined dolomite as a moisture absorbent and MEK as a solvent at a solid content of 50 wt %.
[0126] 200 g of a silane-modified epoxy resin (KSR-177, Kukdo Chemical Co., Ltd.) and 150 g of a phenoxy resin (YP-50, Tohto Kasei Co., Ltd.) were added to a reactor at room temperature, and diluted with MEK. A solution for a moisture barrier layer was prepared by adding 4 g of an imidazole (Shikoku Chemicals Corporation) as a curing agent to the homogenized solution, and stirring the resulting solution at a high speed for 1 hour. The previously prepared moisture absorbent solution was added to the solution to have a content of calcine dolomite of 30 parts by weight with respect to 100 parts by weight of the encapsulation resin of a moisture barrier layer.
[0127] A moisture barrier layer having a thickness of 20 m was formed by coating a releasing surface of a releasing PET film with the solution of the moisture barrier layer, and drying the resulting surface at 130 C. for 3 minutes. According to the same method as described above, a light absorbing layer having a thickness of 10 m was formed by coating a releasing surface of a releasing PET film with the solution of the light absorbing layer, and drying the resulting surface at 130 C. for 3 minutes. The moisture barrier layer and the light absorbing layer were laminated, thereby manufacturing an encapsulation film having a bilayer structure including the moisture barrier layer and the light absorbing layer.
Example 3
[0128] A moisture barrier layer having a thickness of 20 m was formed by coating a releasing surface of a releasing PET film with the solution of the moisture barrier layer prepared in Example 2, and drying the resulting surface at 130 C. for 3 minutes. According to the same method as described above, a light absorbing layer having a thickness of 5 m was formed by coating a releasing surface of a releasing PET film with the solution of the light absorbing layer prepared in Example 2, and drying the resulting surface at 130 C. for 3 minutes.
[0129] The moisture barrier layer and the light absorbing layer were laminated to have a triple layer structure including the light absorbing layer/moisture barrier layer/light absorbing layer, thereby manufacturing an encapsulation film.
Example 4
[0130] An encapsulation film was manufactured by the same method as described in Example 1, except that a carbon black dispersed solution was added to have a carbon black content of 1 part by weight with respect to 100 parts by weight of an encapsulation resin of a light absorbing layer.
Example 5
[0131] An encapsulation film was manufactured by the same method as described in Example 2, except that a moisture absorbent was added to have a content of 10 parts by weight with respect to 100 parts by weight of an encapsulation resin.
Comparative Example 1
[0132] An encapsulation film was manufactured by the same method as described in Example 1, except that carbon black (#3030B, Mitsubishi Carbon black, approximately 55 nm) having conductivity was added as a carbon black at 15 parts by weight with respect to 100 parts by weight of an encapsulation resin.
Comparative Example 2
[0133] An encapsulation film was manufactured by the same method as described in Example 2, except that carbon black (#3030B, Mitsubishi Carbon black, approximately 55 nm) having conductivity was added as a carbon black at 10 parts by weight with respect to 100 parts by weight of an encapsulation resin.
Comparative Example 3
[0134] An encapsulation film was manufactured by the same method as described in Comparative Example 2, except that a moisture absorbent was added at 5 parts by weight with respect to 100 parts by weight of an encapsulation resin.
[0135] 1. Measurement of Light Transmittance and Haze
[0136] A light transmittance of a light absorbing region of the film manufactured above was measured at 550 nm using an UV-Vis spectrometer. When the film was manufactured in a single layer structure, the light transmittance was measured on the light absorbing region of a light absorbing layer in a thickness direction, and when the film was manufactured in a multilayer structure, the light transmittance was measured on the light absorbing region in a thickness direction in a state in which a plurality of layers were stacked.
[0137] In addition, a haze was measured according to a JIS K7105 standard test method using a haze meter. The haze was measured on an entire area of the light absorbing layer when the film was manufactured in a single layer structure, and measured on an entire area in a state in which a plurality of layers were stacked when the film was manufactured in a multilayer structure.
[0138] 2. Measurement of Surface Resistance
[0139] A surface resistance was measured on the light absorbing region of the film manufactured in the Examples or Comparative Examples according to a standard test method using an MCP-HT450 surface resistance meter manufactured by Mitsubishi Chemical Corporation. The surface resistance was measured on the light absorbing region of the encapsulation film from which a releasing film was removed, and measured after 500 V of voltage was applied for 1 minute at 23 C. and 50% R.H. The surface resistance was measured on the light absorbing region of the light absorbing layer when the film was manufactured in a single layer structure, and measured on the light absorbing region in a state in which a plurality of layers were stacked when the film was manufactured in a multilayer structure.
[0140] 3. Defect in Driving of Panel
[0141] An OED panel was manufactured by thermal-laminating the encapsulation film manufactured in the Examples or Comparative Examples between a TFT on which an organic electronic element was deposited and a glass. Here, the encapsulation film was attached such that the light absorbing layer was in contact with a TFT surface. When power was supplied to the panel manufactured as described above, and a short occurred or a bright dot was generated, it was represented as O, and when a short did not occur or a bright dot was not generated, it was represented as X.
TABLE-US-00001 TABLE 1 Light Surface Defect in transmittance resistance driving (%) Haze(%) (/cm.sup.2) of panel Example 1 0.5 88 10.sup.13 X Example 2 3 76 10.sup.14 X Example 3 3.5 74 10.sup.12 X Example 4 15 80 10.sup.13 X Example 5 2.8 44 10.sup.13 X Comparative 0 Impossible 10.sup.10 O Example 1 to measure Comparative 4 74 10.sup.8 O Example 2 Comparative 3.8 34 10.sup.8 O Example 3