ELECTRONIC DEVICE, METHOD OF MANUFACTURING SAME AND METHOD OF REPAIRING SAME

Abstract

There is provided a repair technique capable of repairing interconnect lines and the like in an electronic device with ease and with reliability and capable of suppressing the increase in the number of manufacturing steps associated with the repair to suppress the increase in manufacturing costs. The electronic device having a multi-layer interconnection structure includes: a foundation layer; a patterned interconnect line provided on the foundation layer; and an insulation film formed on the foundation layer and the interconnect line. The insulation film includes at least one thin film part in which at least part of the insulation film which lies on the interconnect line has a thickness less than that of its surroundings.

Claims

1. An electronic device having a multi-layer interconnection structure, comprising: a foundation layer; a patterned interconnect line provided on said foundation layer; and an insulation film formed on said foundation layer and said interconnect line, said insulation film including at least one thin film part in which at least part of the insulation film which lies on said interconnect line has a thickness less than that of its surroundings.

2. The electronic device according to claim 1, wherein said at least one thin film part is provided so that edges thereof extending in a direction orthogonal to the longitudinal direction of said interconnect, line remain within two widthwise edges of said interconnect line.

3. The electronic device according to claim 1, wherein said at least one thin film part is provided so that edges thereof extending in a direction orthogonal to the longitudinal direction of said interconnect line extend to the outside of two widthwise edges of said interconnect line.

4. The electronic device according to claim 3, wherein said at least one thin film part includes extension parts extending to overreach said widthwise edges of said interconnect line, and the extension parts have a thickness approximately equal to the thickness of said interconnect line.

5. The electronic device according to claim 3, wherein said at least one thin film part includes extension parts extending to overreach said widthwise edges of said interconnect line, and the extension parts have a length not less than the thickness of said insulation film.

6. The electronic device according to claim 1, wherein said at least one thin film part is provided so that one of the edges thereof extending in a direction orthogonal to the longitudinal direction of said interconnect line extends to the outside of one of the two widthwise edges of said interconnect line.

7. The electronic device according to claim 6, wherein said at least one thin film part includes an extension part extending to overreach said one widthwise edge of said interconnect line, and the extension part has a thickness approximately equal to the thickness of said interconnect line.

8. The electronic device according to claim 6, wherein said at least one thin film part includes an extension part extending to overreach said one widthwise edge of said interconnect line, and the extension part has a length not less than the thickness of said insulation film.

9. The electronic device according to claim 1, wherein; said at least one thin film part includes a first thin film part provided so that one of the edges of said at least one thin film part extending in a direction orthogonal to the longitudinal direction of said interconnect line extends to the outside of one of the two widthwise edges of said interconnect line, and a second thin film part provided so that the other of the edges of said at least one thin film part extending in a direction orthogonal to the longitudinal direction of said interconnect line extends to the outside of the other of the two widthwise edges of said interconnect line; and said first thin film part and said second thin film part form a pair, and are disposed in spaced apart relation.

10. The electronic device according to claim 9, wherein said at least one thin film part includes extension parts extending to overreach said widthwise edges of said interconnect line, and the extension parts have a thickness approximately equal to the thickness of said interconnect line.

11. The electronic device according to claim 9, wherein said at least one thin film part includes extension parts extending to overreach said widthwise edges of said interconnect line, and the extension parts have a length not less than the thickness of said insulation film.

12. The electronic device according to claim 1, wherein said at least one thin film part includes a plurality of thin f parts disposed in the longitudinal direction of said interconnect line.

13. A method of manufacturing an electronic device as recited in claim 1, wherein the step of forming said at least one thin film part in said insulation film comprises the steps of: (a) forming a resist pattern by a photolithography step, said resist pattern having a recessed part corresponding to said at least one thin film part on said insulation film and thinner than the remaining part; (b) decreasing the thickness of said resist pattern so as to eliminate said recessed part to form an opening; and (c) decreasing the thickness of part of said insulation film which underlies said opening to form said at least one thin film part by etching using said resist pattern having the decreased thickness, said step (c) being performed after said step (b).

14. The method according to claim 13, wherein said step (a) includes the step of exposing a photoresist to light by using a gray tone mask having a transmissive part which fully transmits the exposure light therethrough and a semi-transmissive part corresponding to said at least one thin film part, said semi-transmissive part being lower in transmittance than said transmissive part.

15. A method of repairing an electronic device as recited in claim 12, comprising the steps of: (a) irradiating at least two thin film parts on either side of a defect part of said interconnect line with laser light to remove said insulation film in said at least two thin film parts, thereby forming at least two through holes extending to said interconnect line; and (b) forming a conductive film so as to cover at least said interconnect line exposed in said through holes and to extend over said at least two thin film parts, thereby establishing an electrical short circuit across said defect part.

16. The method according to claim 15, wherein said step (b) forms said conductive film by laser CVD.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0019] FIG. 1 is a plan view showing the configuration of one pixel part of a typical liquid crystal display panel;

[0020] FIG. 2 is a sectional view showing the partial configuration of one pixel part of the typical liquid crystal display panel;

[0021] FIGS. 3, 4, 5A, 5B, 6A, 6B, 7A and 7B are views illustrating a conventional repair method;

[0022] FIG. 8 is a plan view showing the configuration of one pixel part of a liquid crystal display panel according to a first preferred embodiment of the present invention;

[0023] FIG. 9 is a sectional view showing the partial configuration of one pixel part of the liquid crystal display panel according to the first preferred embodiment of the present invention;

[0024] FIG. 10 is a view of a source interconnect line before repair according to the first preferred embodiment of the present invention;

[0025] FIGS. 11A, 11B, 12A, 12B, 13A and 13B are views illustrating repair steps according to the first preferred embodiment of the present invention;

[0026] FIG. 14 is a view of the source interconnect line after repair according to the first preferred embodiment of the present invention;

[0027] FIGS. 15 to 21 are views illustrating a method of manufacturing the liquid crystal display panel according to the first preferred embodiment of the present invention;

[0028] FIGS. 22 to 26 are views illustrating a method of forming a repairing thin film part;

[0029] FIG. 27 is a view of the source interconnect line before repair according to a second preferred embodiment of the present invention;

[0030] FIGS. 28 and 29 are views illustrating the repair steps according to the second preferred embodiment of the present invention;

[0031] FIG. 30 is a view of the source interconnect line after repair according to the second preferred embodiment of the present invention;

[0032] FIG. 31 is a view illustrating the repair steps according to the second preferred embodiment Of the present invention;

[0033] FIG. 32 is a view of the source interconnect line after repair according to a modification of the second preferred embodiment of the present invention;

[0034] FIG. 33 is a sectional view of the source interconnect line after repair according to the modification of the second preferred embodiment of the present invention;

[0035] FIG. 34 is a view of the source interconnect line before repair according to a third preferred embodiment of the present invention;

[0036] FIGS. 35 and 36 are views illustrating the repair steps according to e third preferred embodiment of the present invention;

[0037] FIG. 37 is a view of the source interconnect line after repair according to the third preferred embodiment of the present invention;

[0038] FIG. 38 is a view illustrating the repair steps according to the third preferred embodiment of the present invention;

[0039] FIG. 39 is a view of the source interconnect line after repair according to a modification of the third preferred embodiment of the present invention;

[0040] FIG. 40 is a sectional view of the source interconnect line after repair according to the modification of the third preferred embodiment of the present invention;

[0041] FIG. 41 is a view of the source interconnect line before repair according to a fourth preferred embodiment of the present invention;

[0042] FIGS. 42 and 43 are views illustrating the repair steps according to the fourth preferred embodiment of the present invention;

[0043] FIG. 44 is a view of the source interconnect line after repair according to the fourth preferred embodiment of the present invention;

[0044] FIG. 45 is a view illustrating the repair steps according to the fourth preferred embodiment of the present invention;

[0045] FIG. 46 is a view of the source interconnect line after repair according to a modification of the fourth preferred embodiment of the present invention;

[0046] FIG. 47 is a sectional view of the source interconnect line after repair according to the modification of the fourth preferred embodiment of the present invention;

[0047] FIG. 48 is a plan view showing the configuration of one pixel part of the liquid crystal display panel according to a fifth preferred embodiment of the present invention;

[0048] FIG. 49 is a view of the source interconnect line before repair according to the fifth preferred embodiment of the present invention;

[0049] FIGS. 50 and 51 are views illustrating the repair steps according to the preferred embodiment of the present invention; and

[0050] FIGS. 52 and 53 are views of the source interconnect line after repair according to the fifth preferred embodiment of the present invention.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

Introduction

[0051] Prior to the description on preferred embodiments, a conventional repair method will be further described. FIG. 1 is a plan view showing the configuration of one pixel part of a typical TN (Twisted Nematic) type transmissive liquid crystal display panel 90, and shows the configuration of a TFT substrate side where thin film transistors (TFTs) 30 are arranged in a matrix. FIG. 2 is a view showing a cross-sectional configuration taken along the line A-A of FIG. 1.

[0052] The configuration of the liquid crystal display panel 90 will be described with reference to FIGS. 1 and 2. As shown in FIG. 1, the liquid crystal display panel 90 includes source interconnect lines 41 serving as signal lines and gate interconnect lines 21 serving as scanning lines. The source interconnect lines 41 intersect the gate interconnect lines 21 in orthogonal relation to each other. The TFTs 30 are provided near the respective intersections of the source interconnect lines 41 and the gate interconnect lines 21. Each of the TFTs 30 controls the supply of a display voltage so as to apply the display voltage based on an externally inputted video signal to a pixel electrode 7.

[0053] As shown in FIG. 2, such a TFT 30 includes a gate electrode 2 disposed on a transparent insulative substrate 1 made of glass and the like, a gate insulation film 11 covering, the gate electrode 2 from above, a semiconductor film 3 formed on the gate insulation film 11 over the gate electrode 2, an ohmic contact film 6 on the semiconductor film 3, and a source electrode 4 and a drain electrode 5 which are provided on the ohmic contact film 6 lying on the semiconductor film 3. An interlayer insulation film 12 is provided to cover the drain electrode 5. The pixel electrode 7 is provided on the interlayer insulation film 12. The pixel electrode 7 is electrically connected to the drain electrode 5 through a contact hole CH1.

[0054] As shown in FIG. 1, the source electrode 4 is provided in an orthogonal intersection part of a source interconnect line 41 and a gate interconnect line 21 so as to extend from the source interconnect line 41 in a direction orthogonal to the source interconnect line 41 to over the semiconductor film 3. The drain electrode 5 is positioned in opposed relation to the source electrode 4 as seen in plan view. The drain electrode 5 extends from over the semiconductor film 3 to under the pixel electrode 7.

[0055] The TFT 30 is provided over the gate interconnect line 21, and the gate interconnect line 21 serves as the gate electrode 2 thereof.

[0056] The pixel electrode 7 is formed to have such a size and a planar shape as to substantially cover a pixel region defined by the source and gate interconnect lines 41 and 21. A common electrode (not shown) is provided on a counter substrate side in vertically opposed relation to the pixel electrode 7, with a liquid crystal layer (not shown) therebetween. The common electrode is electrically connected to a common interconnect line (not shown) formed in the same layer as the gate interconnect lines 21.

[0057] Next, a conventional repair method will be described with reference to FIGS. 3, 4, 5A, 5B, 6A, 68, 7A and 7B. FIG. 3 shows an example of break defects produced in a source interconnect line 41 in the liquid crystal display panel 90 shown in FIG. 1. As shown in FIG. 3, the source interconnect line 41 is broken in a broken part BL which is a defective part, so that an electric signal is not provided to the source electrode 4. In such a case, the interlayer insulation film on the source interconnect line 41 is irradiated with laser light at two locations on either side of the broken part BL. This removes the irradiated parts of the interlayer insulation film to form through holes LP extending to the source interconnect line 41. Then, as shown in FIG. 4, a repairing conductive film RL is formed to extend over the two through holes LP on either side of the broken part. BL, thereby establishing an electrical short circuit across the broken part BL.

[0058] Conventional repair steps will be described with reference to FIGS. 5A, 5B, 6A, 6B, 7A and 7B. FIGS. 5A, 6A and 7A show configurations corresponding to a cross-section taken along the line B-B of FIG. 4, and FIGS. 5B, 6B and 7B show configurations corresponding to a cross-section taken along the line CC of FIG. 4.

[0059] The source interconnect line 41 in which a break defect is produced is shown in FIGS. 5A and 5B. Next, in the step shown in FIGS. 6A and 6B, the interlayer insulation film 12 on the source interconnect line 41 is irradiated with laser light LZ at two locations on either side of the broken part BL. This removes the irradiated parts of the interlayer insulation film 12 to form the through holes LP extending to the source interconnect line 41 by a laser vaporization method (zapping method).

[0060] As shown in FIGS. 6A and 6B, there arise asperities on the inner surfaces of the through holes LP, so that the cross-sectional shape thereof is irregular. This is prone to occur pronouncedly when the laser light LZ has excessive power. Depending on the circumstances, there are cases in which the source interconnect line 41 has also asperities and breaks because of damages thereto. When the laser light LZ has insufficient power, on the other hand, the through holes LP are not completely formed through the interlayer insulation film 12. In the former case, there is a likelihood that breaks occur later due to degradation with time even when an electrical short circuit is established once across the broken part BL. In the latter case, an electrical short circuit is not established across the broken part BL even when the repairing conductive film RL is formed.

[0061] Next, in the step shown in FIGS. 7A and 7B, the repairing conductive film RL is formed to extend over the two through holes LP, thereby establishing an electrical short circuit across the broken part BL. However, the coverage of the repairing conductive film RL is poor because of the irregular cross-sectional shape of the through holes LP, which in turn results in a low degree of reliability.

First Preferred Embodiment

Device Configuration

[0062] An electronic device according to a first preferred embodiment of the present invention will be described hereinafter. FIG. 8 is a plan view showing the configuration of one pixel part of a TN (Twisted Nematic) type transmissive liquid crystal display panel 100 according to the first preferred embodiment, and shows the configuration of the TFT substrate side where the TFTs 30 are arranged in a matrix. FIG. 9 is a sectional view showing a cross-sectional configuration taken along the line A-A of FIG. 8, and shows the cross-sectional configuration of a source interconnect line part, a TFT part, and a pixel part.

[0063] The configuration of the liquid crystal display panel 100 will be described with reference to FIGS. 8 and 9. The same reference numerals and characters are used in FIGS. 8 and 9 to designate components identical with those of the liquid crystal display panel 90 described with reference to FIGS. 1 and 2, and repetition in description is dispensed with.

[0064] As shown in FIG. 8, the liquid crystal display panel 100 further includes a plurality of repairing thin film parts 20 provided in the interlayer insulation film 12 (not shown) covering the source interconnect lines 41 along the source interconnect lines 41. An example of break defects produced in a source interconnect line 41 is shown in FIG. 8, and a broken part BL is formed. This is, however, for the illustration of the repair method according to the present invention, and is not the component of the present invention.

[0065] As shown in FIG. 9, such a repairing thin film part 20 is an area where the thickness of the interlayer insulation film 12 covering the source interconnect line 41 is partially less than that of other parts.

[0066] FIG. 10 is an enlarged view of the source interconnect line 41 including two repairing thin film parts 20 on either side of the broken part BL of the source interconnect line 41 shown in FIG. 8 before repair. As shown in FIG. 10, the repairing thin film parts 20 are sized so as not to extend off the upper part of the source interconnect line 41, i.e., provided so that edges thereof extending in a direction orthogonal to the longitudinal direction of the source interconnect line 41 remain within two widthwise edges of the source interconnect line 41. In FIG. 10, the line B-B extending in the longitudinal direction of the source interconnect line 41 so as to pass over the two repairing thin film 20 parts 20, and the line C-C traversing one of the repairing thin film parts 20 in the direction of the width of the interconnect line are additionally shown.

[0067] Next, repair steps according to the present invention will be described with reference to FIGS. 11A, 11B, 12A, 12B, 13A and 13B. FIGS. 11A, 12A and 13A show configurations corresponding to a cross-section taken along the line B-B of FIG. 10, and FIGS. 11B, 12B and 13B show configurations corresponding to a cross-section taken along the line C-C of FIG. 10.

[0068] As shown in FIGS. 11A and 11B, the two repairing thin film parts 20 are provided in the interlayer insulation film 12 on either side of the broken part BL. The broken part BL is shown in FIGS. 11A and 11B as produced midway between the two repairing thin film parts 20. This is, however, merely an example.

[0069] A configuration in which four repairing thin film parts 20 are provided for the source interconnect line 41 of one pixel is shown in FIGS. 11A and 11B. However, the number of repairing thin film parts 20 is not limited to this, but may be greater than four. The provision of a greater number of repairing thin film parts 20 makes it easier to cope with a break produced at any position in the interconnect line, and achieves a shorter formation path of the repairing conductive film, thereby improving the reliability of the repairing conductive film. In addition, this is more preferable because a shorter repairing time improves productivity. However, other effects remain unchanged when the formation path of the repairing conductive film becomes longer. Less than four repairing thin film parts 20 may he provided for each pixel. Alternatively, one repairing thin film part 20 may be provided for each pixel or for a plurality of pixels.

[0070] Next, in the step shown in FIGS. 12A and 12B, the repairing thin film parts 20 on the source interconnect line 41 is irradiated with the laser light LZ at two locations on either side of the broken part BL. This removes the interlayer insulation film 12 in the repairing thin film parts 20 to form the through holes LP extending to the source interconnect line 41 by the zapping method. A laser apparatus having a maximum output energy of greater than 0.5 J/pulse, for example, is used for the removal of the interlayer insulation film 12.

[0071] That is, a pulsed laser is used to remove the interlayer insulation film 12 while irradiation energy and time are controlled. Using a slit for setting an irradiation range, spots of laser light are set to have a size equal to or slightly greater than the size of the repairing thin film parts 20 as seen in plan view, e.g. on the order of 22 m to 1010 m. The wavelength of laser light may be selected from among 266 nm, 355 nm, 532 nm and 1064 nm. However, laser light having a wavelength of 266 nm is often used.

[0072] In the repairing thin film parts 20, the interlayer insulation film 12 is reduced in thickness. This shortens the time required for the removal to improve productivity when the power of the laser light LZ is set to a lower energy than that of the conventional repair method.

[0073] Also, setting the power of the laser light LZ to a lower energy suppresses the asperities on the inner surfaces of the through holes LP as shown in FIGS. 12A and 12B to suppress the irregular cross-sectional shape of the through holes LP. This provides good coverage of the repairing conductive film RL to be formed next to prevent a narrow incomplete conduction path from resulting in the occurrence of a second break after shipment due to degradation with time, thereby improving a repair success rate and connection reliability.

[0074] The interlayer insulation film 12 is removed in the repairing thin film parts 20 only to be repaired. Thus, the remaining repairing thin film parts 20 are covered with the insulation film on the interconnect line, so that metal of the interconnect line is not exposed. In the case of a liquid crystal display, when the plurality of repairing thin film parts 20 are provided for the repair of signal lines close to the liquid crystal layer such as the source interconnect lines, current having a direct-current component does not flow in the liquid crystal. This prevents the degradation of the liquid crystal to prevent the impairment of the reliability and display quality of the display.

[0075] Next, in the step shown in FIGS. 13A and 13B, the repairing conductive film RL is formed to extend over the two through holes LP, thereby establishing an electrical short circuit across the broken part BL. This provides a high degree of coverage of the repairing conductive film RL to provide a sufficiently high degree of reliability of the connection repair because the cross-sectional shape of the through holes LP is not irregular. A plan view corresponding to FIGS. 13A and 13B is shown in FIG. 14.

[0076] The repairing conductive film RL may be provided by depositing a metal film predominantly made of tungsten (W) excellent in electrical conductivity by means of a laser CVD (chemical vapor deposition) apparatus. For the deposition of the repairing conductive film RL, a continuous wave semiconductor laser (diode laser) apparatus is used as a laser light source, and third harmonics (351 nm) produced by wavelength conversion to one-third wavelength of the fundamental waves thereof are used. The continuous wave semiconductor laser (diode laser) apparatus used herein has a maximum average power output of not less than 2.0 mW (4 kHz).

[0077] For the formation of the repairing conductive film RL, a tungsten-containing carbonyl compound (for example, W(CO).sub.6) is used as a source gas and argon gas (Ar) is used as a carrier gas for the purpose of locally depositing tungsten.

[0078] More specifically, the tungsten-containing carbonyl compound is gasified, and the gasified tungsten-containing carbonyl compound is supplied to the part where the through holes LP are provided. This part is irradiated with laser light the size (width) of which is defined by a variable slit. Thus, the tungsten-containing carbonyl compound in the part irradiated with the laser light undergoes a photochemical reaction, so that a tungsten film is deposited and formed. The thickness of the tungsten film is controlled by the irradiation time of the laser light, and is in the range of 0.1 to 0.5 m.

[0079] The tungsten-containing carbonyl compound is high in decomposition and deposition efficiencies by means of laser light and excellent in film formation stability. However, other source gases such as chromium carbonyl may be used. Thus, the repairing conductive film RL may be made of other metals such as chromium (Cr). Argon gas which is inert is preferably used as the carrier gas, but an inert gas such as nitrogen gas may be used as the carrier gas.

[0080] The width of the repairing conductive film RL may be selected as appropriate, for example, from the range of 1 to 25 m by adjusting the width of the variable slit defining the size of the laser light and the energy level of the laser light. The thickness of the repairing conductive film RL nay be selected as appropriate, for example, from a range of not greater than 1.5 m.

[0081] When laser CVD is used for the formation of the repairing conductive film RL, a laser processing apparatus including both the laser apparatus used for zapping and the laser apparatus used for laser CVD may be used. This allows the zapping and the formation of the repairing conductive film RL to be performed in succession, thereby achieving efficient operation.

[0082] The repairing thin film parts 20 are sized so as not to extend off the upper part of the source interconnect line 41. Thus, the bottom surfaces of the repairing contact holes formed in the repairing thin film parts 20 are defined only by the upper surface of the source interconnect lines 41 and therefore substantially planar. This provides good coverage of the repairing conductive film RL.

[0083] The method of formation of the repairing conductive film RL is not limited to the laser CVD. For example, the repairing conductive film RL may be formed by applying an electrically conductive paste (an organic solution containing a metal material) to extend over the two repairing thin film parts 20 and then heating the electrically conductive paste to dry the electrically conductive paste. The method of forming the repairing conductive film RL is not limited so long as an electrical short circuit is established across the broken part BL, and a conventional technique may be used for the formation of the repairing conductive film RL.

Manufacturing Method

Method of Manufacturing Liquid Crystal Display Panel

[0084] With reference to FIGS. 15 to 21 which are sectional views showing manufacturing steps in sequential order, description will be given on a method of manufacturing the liquid crystal display panel 100 including a method of manufacturing the repairing thin film parts. FIGS. 15 to 21 correspond to the sectional view shown in FIG. 9, and each show a cross-sectional configuration taken along the line A-A of FIG. 8.

[0085] First, as shown in FIG. 15, the transparent insulative substrate 1 made of glass and the like is prepared. Thereafter, an AlNiNd film or an AlNiNdN film obtained by doping AlNiNd with N (nitrogen), for example, is formed as a first metal film ML1 on the entire upper surface of the transparent insulative substrate 1 serving as a foundation layer by a sputtering method to have a thickness on the order of 210 nm.

[0086] Next, a photoresist is applied onto the first metal film ML1. Thereafter, exposure to light and development e performed on the photoresist to form a resist pattern RM1 by patterning. These successive steps are referred to hereinafter as a photolithography step.

[0087] In this first photolithography step, the resist pattern RM1 for the patterning of the gate electrode 2 and the gate interconnect line 21 is formed. Thereafter, using the resist pattern RM1 as an etching mask, the first metal film ML1 is etched, and the resist pattern RM1 is then removed. This provides the gate electrode 2 and the gate interconnect line 21, as shown in FIG. 16. These successive steps are referred to hereinafter as an etching and resist removal step.

[0088] Next, in the step shown in FIG. 17, a silicon nitride (SiN) film having a thickness on the order of 400 nm is formed, for example, by a CVD method so as to cover the entire upper surface of the transparent insulative substrate 1. This provides the gate insulation film 11.

[0089] Next, a semiconductor film and an ohmic contact film are formed in the order named on the entire upper surface of the gate insulation film 11 serving as a foundation layer. A photoresist is applied onto the ohmic contact film. Thereafter, a photolithography step (second photolithography step) is performed to form a resist pattern (not shown).

[0090] The semiconductor film used herein is formed, for example, by a CVD method using an amorphous silicon (a-Si(i)) that is an intrinsic semiconductor to have a thickness on the order of 150 nm. The ohmic contact film used herein is formed, for example, by a CVD method using an amorphous silicon (a-Si(n)) doped with an N-type impurity to have a thickness on the order of 30 nm. Examples of the impurity used for doping include phosphorus (P) and arsenic (As).

[0091] Thereafter, using the resist pattern as an etching mask, the ohmic contact film and the semiconductor film are etched, and the resist pattern is then removed. This provides a pattern such that the semiconductor film 3 and the ohmic contact film 6 are left only over the gate electrode 2 and its surroundings, as shown in FIG. 18.

[0092] Next, for example, a Cr film is formed as a second metal film over the entire upper surface of the gate insulation film 11 serving as a foundation layer by a sputtering method to have a thickness on the order of 200 nm. Then, a photoresist is applied onto the second metal film. Thereafter, a photolithography step (third photolithography step) is performed to form a resist pattern RM2.

[0093] This resist pattern RM2 is a resist pattern for the patterning of the source electrode 4, the drain electrode 5 and the source interconnect line 41. Using the resist pattern RM2 as an etching mask, the second metal film is etched. This provides the source electrode 4, the drain electrode 5 and the source interconnect line 41, as shown in FIG. 19.

[0094] Further, using the resist pattern RM2, part of the ohmic contact film 6 which lies over a channel region is completely removed by etching, and the semiconductor film 3 is removed by etching to a predetermined depth. Then, the resist pattern RM2 is removed. Thus, the semiconductor film 3 in which the channel region is formed has a predetermined thickness, as shown in FIG. 20.

[0095] Next, a SiN film having a thickness on the order of 400 nm is formed, for example, by a CVD method so as to cover the entire upper surface of the transparent insulative substrate 1. This provides the interlayer insulation film 12. Thereafter, a photolithography step (fourth photolithography step) is performed to form a resist pattern (not shown). Using the resist pattern as an etching mask, the interlayer insulation film 12 is etched. The resist pattern is then removed. This provides the contact hole CHI extending to the drain electrode 5 in the pixel part, and the repairing thin film part 20 over the source interconnect line 41, as shown in FIG. 21.

[0096] Next, a transparent conductive film, e.g. an ITO (Indium Tin Oxide) film, is formed over the entire upper surface of the transparent insulative substrate 1 by a sputtering method to have a thickness on the order of 80 nm. Thereafter, a photolithography step (fifth photolithography step) is performed to form a resist pattern (not shown). Using the resist pattern as an etching mask, the transparent conductive film is etched. The resist pattern is then removed. Thus, the pixel electrode 7 is patterned in the pixel part, so that a cross-sectional configuration shown in FIG. 9 is provided. The repair steps described with reference to FIGS. 11A, 11B, 12A, 12B, 13A and 13B may be performed in this stage.

[0097] Then, an alignment film is formed on the finished TFT substrate in a subsequent cell step. An alignment film is also formed on the counter substrate produced separately and having a counter electrode. Then, a technique such as rubbing is used to perform an aligning treatment which makes minute scratches in one direction on a contact surface with the liquid crystal on these alignment films.

[0098] Next, a seal material is applied to a peripheral part of the TFT substrate or the counter substrate to affix the TFT substrate and the counter substrate to each other in a predetermined spaced relation so that the alignment films thereof are opposed to each other. Thereafter, the liquid crystal is injected through a liquid crystal injection port by using a vacuum injection method and the like, and the liquid crystal injection port is sealed. Polarizing plates are affixed respectively to the opposite surfaces of the liquid crystal cell formed in this manner, and a driving circuit is connected to the liquid crystal cell. Then, a backlight unit is mounted. In this manner, a liquid crystal display device is finished.

Method of Forming Repairing Thin Film Part

[0099] Next, the method of forming the repairing thin film part 20 in the fourth photolithography step will be further described with reference to FIGS. 22 to 26.

[0100] In the fourth photolithography step, the interlayer insulation film 12 is formed so as to cover the entire upper surface of the transparent insulative substrate 1, and thereafter a resist is applied onto the interlayer insulation film 12. Then, prebaking is performed, and thereafter exposure to light is performed using a gray tone mask GM, as shown in FIG. 22.

[0101] Specifically, the gray tone mask GM has a gray tone pattern GT for the formation of the repairing thin film part 20 in the interlayer insulation film 12, and a full transmission pattern TP for the formation of the contact hole CH1 in the pixel part. The remainder of the gray tone mask GM is a light blocking film pattern LB.

[0102] The full transmission pattern TP is a transmissive part which fully transmits exposure light therethrough without decreasing the light intensity of the exposure light. The gray tone pattern GT is a semi transmissive part having a transmittance lower than that of the transmissive part, so that the light intensity after transmission therethrough is lower than that obtained by the full transmission pattern TP. The light blocking film pattern LB is a light blocking part which completely blocks the exposure light. Although not shown, the full transmission pattern TP is additionally formed in part of the gray tone pattern GT which corresponds to the formation of a contact hole extending to the common interconnect line formed in the same layer as the gate interconnect line 21. The common electrode and the common interconnect line are electrically connected to each other through this contact hole.

[0103] In the step shown in FIG. 22, a photoresist PR applied to and formed on the transparent insulative substrate 1 is exposed to light through the use of such a gray tone mask GM, and is developed, so that a resist pattern RM11 shown in FIG. 23 is formed by patterning. Specifically, the resist pattern RM11 has a recessed part CP1 which is a part exposed to light through the gray tone pattern GT to have a thickness less than that of an unexposed part of the resist film, and an opening part OP1 which is a part exposed to light through the full transmission pattern TP to be completely removed.

[0104] Next, in the step shown in FIG. 24, the interlayer insulation film 12 is dry etched using the resist pattern RM11 as an etching mask, As a result, the area where the opening part OP1 is provided is further etched, so that the contact hole CH1 extending to the drain electrode 5 is formed. In the area where the recessed part CP1 is provided, on the other hand, the interlayer insulation film 12 is not etched because the resist is left.

[0105] Next, in the step shown in FIG. 25, the thickness of the resist pattern RM11 is wholly decreased using O.sub.2 ashing, so that the resist in the area where the recessed part CP1 is provided is completely removed. This provides a resist pattern RM12 in which the upper part of an area where the repairing thin film part 20 of the interlayer insulation film 12 is to be formed is an opening part OP2.

[0106] Next, in the step shown in FIG. 26, the interlayer insulation film 12 is dry etched using the resist pattern RM12 as an etching mask. As a result, the area where the opening part OP2 is provided is further etched, so that the repairing thin film part 20 in which the thickness of the interlayer insulation film 12 is less than that of the remaining area is formed. In this etching process, etching conditions and etching time are precisely managed so that the thickness of the interlayer insulation film 12 left in the area where the opening part OP2 is provided becomes a previously determined thickness. Finally, the resist pattern RM12 is removed. This provides the cross-sectional configuration shown in FIG. 21. The stepped part on the periphery of the repairing thin film part 20, which is formed by the lithography step and the etching step, has good coverage.

[0107] As described above, the resist is exposed to light through the use of the gray tone mask in the fourth photolithography step. This achieves the formation of the repairing thin film part 20 without the addition of a photolithography step to prevent the increase in manufacturing costs.

Second Preferred Embodiment

[0108] The electronic device according to a second preferred embodiment of the present invention will be described with reference to FIGS. 27 to 31. Only components different from those of the first preferred embodiment will be described, and the common components will not be described.

[0109] FIG. 27 is an enlarged view of the source interconnect line 41 including two repairing thin film parts 20A on either side of the broken part BL of the source interconnect line 41 before repair. In FIG. 27, the line C-C traversing one of the repairing thin film parts 20A in the direction of the width of the interconnect line is additionally shown.

[0110] As shown in FIG. 27, the repairing thin film parts 20A are sized so as to extend off the upper part of the source interconnect line 41, i.e., sized so that edges thereof extending in a direction orthogonal to the longitudinal direction of the source interconnect line 41 overreach the two widthwise edges of the source interconnect line 41.

[0111] Parts of the repairing thin film parts 20A which overreach the widthwise edges of the source interconnect line 41 are referred to as extension parts. In FIG. 27, the length of the extension parts (the dimension of the direction of the width of the interconnect line) is shown as an extension length . A cross-sectional configuration taken along the line C-C of FIG. 27 is shown in FIG. 8.

[0112] In such a repairing thin film part 20A, the thickness of the interlayer insulation film 12 on the source interconnect line 41 is decreased, as shown in FIG. 28. The thickness of the interlayer insulation film 12 is similarly decreased as well in the extension parts. The stepped part on the periphery of the repairing thin film part 20A, which is formed by a lithography step and an etching step, has good coverage. The decreased thickness p of the interlayer insulation film 12 is approximately equal to the thickness of the source interconnect line 41. The reason therefor will be described below.

[0113] When the zapping method is used to remove part of the interlayer insulation film 12 which is irradiated with laser light, the laser light is reflected from the surface of a metal film, and the reflected laser light exerts an action. Thus, the laser power necessary and sufficient for the removal of the insulation film by breaking chemical bonds at the interface between the metal film and the insulation film is sufficiently lower than the laser power required to remove the insulation film in the absence of the metal film. For the removal of the insulation film left in the repairing thin film part 20A, the insulation film is therefore irradiated with laser light having laser power of a minimum level necessary and sufficient for the removal of the insulation film on the metal film.

[0114] This prevents a break resulting from damages to the metal film, i.e. the source interconnect line 41. In addition, the interlayer insulation film 12 in the area where the source interconnect line 41 is absent is little removed, whereas the interlayer insulation film 12 left on the source interconnect line 41 is removed to expose the source interconnect line 41. Thus, the upper surface of the interlayer insulation film 12 in the extension parts of the repairing thin film part 20A is substantially flush with the exposed upper surface of the source interconnect line 41.

[0115] Specifically, the thickness 11 of the interlayer insulation film 12 left in the extension parts is made approximately equal to the thickness of the source interconnect line 41 in consideration for the fact that the interlayer insulation film 12 in the area where the source interconnect line 41 is absent is little removed. This causes the upper surface of the interlayer insulation film 12 in the extension parts to be substantially flush with the upper surface of the source interconnect line 41 when the interlayer insulation film 12 left on the source interconnect line 41 is removed. This is the reason why the interlayer insulation film 12 is removed to a depth deeper than the upper part of the source interconnect line 41 in the extension parts and the thickness 13 of the left interlayer insulation film 12 is made approximately equal to the thickness of the source interconnect line 41.

[0116] FIG. 29 is a sectional view showing that the source interconnect line 41 is exposed in the bottom of the through hole LP obtained by removing the interlayer insulation film 12 in the repairing thin film part 20A by the zapping method. As shown in FIG. 29, the upper surface of the interlayer insulation film 12 in the extension parts of the repairing thin film part 20A and the upper surface of the source interconnect line 41 are substantially flush with each other in the bottom surface of the through hole LP.

[0117] It is desirable that the extension length a of the extension parts of the repairing thin film part 20A is not less than the thickness of the interlayer insulation film 12 which is not yet decreased. When the extension length is less than the thickness of the interlayer insulation film 12 which is not yet decreased, there is a likelihood that the upper surface of the interlayer insulation film 12 in the extension parts and the upper surface of the source interconnect line 41 are not substantially flush with each other near the edges of the source interconnect line 41, i.e. the underlying metal film to be repaired, as seen in the direction of the width of the interconnect line, which is not preferable. By making the extension length a not less than the thickness of the interlayer insulation film 12 which is not yet decreased, the upper surface of the interlayer insulation film 12 in the extension parts and the upper surface of the source interconnect line 41 are made substantially flush with each other, which is preferable.

[0118] After planarization in the repairing thin film parts 20A, the repairing conductive film RL predominantly made of tungsten excellent in electrical conductivity is formed, as shown in FIG. 30, by means of a laser CVD apparatus so as to extend over the two repairing thin film parts 20A on either side of the broken part BL as in the first preferred embodiment. In this case, the repairing conductive film RL is deposited so as to cover all of the two repairing thin film parts 20A. A cross-sectional configuration taken along the line C-C of FIG. 30 is shown in FIG. 31.

[0119] As described above, the repairing thin film parts 20A in the electronic device according to the second preferred embodiment of the present invention are sized to overreach the two widthwise edges of the source interconnect line 41. Thus, when the through holes LP are formed in the repairing thin film parts 20A, the exposed area of the source interconnect lines 41 is made large. This decreases the contact resistance with the repairing conductive film RL formed thereon to improve the reliability of the connection repair.

[0120] In the repairing thin film parts 20A, the thickness of the interlayer insulation film 12 left in the extension parts is made approximately equal to the thickness of the source interconnect line 41. Thus, when the through holes LP are provided in the repairing thin film parts 20A, the upper surface of the interlayer insulation film 12 in the extension parts is substantially flush with the upper surface of the source interconnect line 41, so that the step therebetween is reduced. This provides good coverage of the repairing conductive film RL formed thereon to further improve the reliability of the connection repair.

[0121] Also, the extension length a of the extension parts of the repairing thin film parts 20A is not less than the thickness of the interlayer insulation film 12 which is not yet decreased. This achieves further planarization of the upper surface of the interlayer insulation film 12 in the extension parts and the upper surface of the source interconnect line 41 near the edges of the source interconnect line 41 as seen in the direction of the width of the interconnect line to further improve the reliability of the connection repair.

Modifications

[0122] In the second preferred embodiment described above, the repairing conductive film RL is formed to completely cover the repairing thin film parts 20A, as shown in FIGS. 30 and 31. However, as shown in FIG. 32, the deposition range of the repairing conductive film RL may be decreased so that the repairing thin film parts 20A have portions not covered with the repairing conductive film RL. A cross-sectional configuration taken along the line C-C of FIG. 32 is shown in FIG. 33. As shown in FIG. 33, the upper surface of the source interconnect line 41 is covered with the repairing conductive film RL, but the extension parts of the repairing thin film parts 20A have portions not covered with the repairing conductive film RL.

[0123] The decrease in the deposition range of the repairing conductive film RL shortens the time required for the deposition to improve productivity. The width of the repairing conductive film RL may be easily changed by adjusting the width of the variable slit defining the size of the laser light and the energy level of the laser light.

Third Preferred Embodiment

[0124] The electronic device according to a third preferred embodiment of the present invention will be described with reference to FIGS. 34 to 38. Only components different from those of the first preferred embodiment will be described, and the common components will not be described.

[0125] FIG. 34 is an enlarged view of the source interconnect line 41 including two repairing thin film parts 20B on either side of the broken part BL of the source interconnect line 41 before repair. In FIG. 34, the line C-C traversing one of the repairing thin film parts 20B in the direction of the width of the interconnect line is additionally shown.

[0126] As shown in FIG. 34, the repairing thin film parts 20B are sized so that one of the edges thereof extending in a direction orthogonal to the longitudinal direction of the source interconnect line 41 overreaches one of the two widthwise edges of the source interconnect line 41.

[0127] Parts of the repairing thin film parts 20A which overreach the widthwise edge of the source interconnect line 41 are referred to as extension parts. In FIG. 34, the length of the extension parts (the dimension of the direction of the width of the interconnect line) is shown as an extension length . A cross-sectional configuration taken along the line C-C of FIG. 34 is shown in FIG. 35.

[0128] In such a repairing thin film part 20B, the thickness of the interlayer insulation film 12 on the source interconnect line 41 is decreased, as shown in. FIG. 35. The thickness of the interlayer insulation film 12 is similarly decreased as well in the extension part. The thickness of the interlayer insulation film 12 left in the extension part is approximately equal to the thickness of the source interconnect line 41. The reason therefor is described in the second preferred embodiment and will not be described in the third preferred embodiment. The stepped part on the periphery of the repairing thin film part 20B, which is formed by a lithography step and an etching step, has good coverage.

[0129] FIG. 36 is a sectional view showing that the source interconnect line 41 is exposed in the bottom of the through hole LP obtained by removing the interlayer insulation film 12 in the repairing thin film part 20B by the zapping method. As shown in FIG. 36, the upper surface of the interlayer insulation film 12 in the extension part of the repairing thin film part 20B and the upper surface of the source interconnect line 41 are substantially flush with each other in the bottom surface of the through hole LP.

[0130] Also, the extension length a of the extension part of the repairing thin film part 20B is not less than the thickness of the interlayer insulation film 12 which is not yet decreased. This achieves further planarization of the upper surface of the interlayer insulation film 12 in the extension part and the upper surface of the source interconnect line 41 near the one edge of the source interconnect line 41 as seen in the direction of the width of the interconnect tine to further improve the reliability of the connection repair.

[0131] After planarization in the repairing thin film parts 20B, the repairing conductive film RL predominantly made of tungsten excellent in electrical conductivity is formed, as shown in FIG. 37, by means of a laser CVD apparatus so as to extend over the two repairing thin film parts 20B on either side of the broken part BL as in the first preferred embodiment. In this case, the repairing conductive film RL is deposited so as to cover all of the two repairing thin film parts 20B. A cross-sectional configuration taken along the line C-C of FIG. 37 is shown in FIG. 38.

[0132] The repairing thin film parts 20B are formed so as to overreach one of the two widthwise edges of the source interconnect line 41. Thus, damages to the source interconnect line 41 which can be caused by laser irradiation for the removal of the interlayer insulation film 12 occurs on only one side of the source interconnect line 41 subjected to the repair connection. In other words, part of the source interconnect line 41 which is not subjected to the repair connection is not damaged. This reduces a likelihood that a break results from damages to the source interconnect line 41 caused by laser irradiation.

[0133] In the repairing thin film parts 20B, the thickness the interlayer insulation film 12 left the extension parts is made approximately equal to the thickness of the source interconnect line 41. Thus, when the through holes LP are provided in the repairing thin film parts 20B, the upper surface of the interlayer insulation film 12 in the extension parts is substantially flush with the upper surface of the source interconnect line 41, so that the step therebetween is reduced. This provides good coverage of the repairing conductive film RL formed thereon to further improve the reliability of the connection repair.

Modifications

[0134] In the third preferred embodiment described above, the repairing conductive film RL is formed to completely cover the repairing thin film parts 20B, as shown in FIGS. 37 and 38. However, as shown in FIG. 39, the deposition range of the repairing conductive film RL may be decreased so that the repairing thin film parts 20B have portions not covered with the repairing conductive film RL although portions thereof on the source interconnect line 41 are covered with the repairing conductive film RL. A cross-sectional configuration taken along the line C-C of FIG. 39 is shown in FIG. 40. As shown in FIG. 40, the extension parts of the repairing thin film parts 20B have portions not covered with the repairing conductive film RL.

[0135] The decrease in the deposition range of the repairing conductive film RL shortens the time required for the deposition to improve productivity.

Fourth Preferred Embodiment

[0136] The electronic device according to a fourth preferred embodiment of the present invention will be described with reference to FIGS. 41 to 45. Only components different from those of the first preferred embodiment will be described, and the common components will not be described.

[0137] FIG. 41 is an enlarged view of the source interconnect lines 41 including four repairing thin film parts 20C on either side of the broken part BL of the source interconnect line 41 before repair. In FIG. 41, the line CC traversing two of the repairing thin film parts 20C in the direction of the width of the interconnect line is additionally shown.

[0138] As shown in FIG. 41, two of the repairing thin film parts 20C (first and second thin film parts) provided so as to overreach two respective widthwise edges of the source interconnect line 41 form a pair, and are disposed in spaced apart relation. Two of the repairing thin film parts 20C forming a pair are similarly formed on the opposite side of the broken part BL.

[0139] Parts of the individual repairing thin film parts 20C which overreach the widthwise edges of the source interconnect line 41 are referred to as extension parts. In FIG. 41, the length of the extension parts (the dimension of the direction of the width of the interconnect line) is shown as an extension length . A cross-sectional configuration taken along the line C-C of FIG. 41 is shown in FIG. 42.

[0140] In such repairing thin film parts 20C, the thickness of the interlayer insulation film 12 on the source interconnect line 41 is decreased, as shown in FIG. 42. The thickness of the interlayer insulation film 12 is similarly decreased as well in the extension parts. The thickness of the interlayer insulation film 12 left in the extension parts is approximately equal to the thickness of the source interconnect line 41. The reason therefor is described in the second preferred embodiment and will not be described in the fourth preferred embodiment. The stepped part on the periphery of the repairing thin film parts 20C, which is formed by a lithography step and an etching step, has good coverage.

[0141] FIG. 43 is a sectional view showing that the source interconnect line 41 is exposed in the bottoms of the through holes LP obtained by removing the interlayer insulation film 12 in the repairing thin film parts 20C by the zapping method. As shown in FIG. 43, the upper surface of the interlayer insulation film 12 in the extension parts of the repairing thin film parts 20C and the upper surface of the source interconnect line 41 are substantially flush with each other in the bottom surfaces of the through holes LP.

[0142] Also, the extension length of the extension parts of the repairing thin film parts 20C is not less than the thickness of the interlayer insulation film 12 which is not yet decreased. This achieves further planarization of the upper surface of the interlayer insulation film 12 in the extension parts and the upper surface of the source interconnect line 41 near one of the edges of the source interconnect line 41 as seen in the direction of the width of the interconnect line to further improve the reliability of the connection repair.

[0143] After planarization in the repairing thin film parts 20C, the repairing conductive film RL predominantly made of tungsten excellent in electrical conductivity is formed, as shown in FIG. 44, by means of a laser CVD apparatus so as to extend over the two pairs of repairing thin film parts 20C on either side of the broken part BL as in the first preferred embodiment. In this case, the repairing conductive film RL is deposited so as to cover all of the two pairs of repairing thin film parts 20C. A cross-sectional configuration taken along the line C-C of FIG. 44 is shown in FIG. 45.

[0144] Two of the repairing thin film parts 20C provided so as to overreach two respective widthwise edges of the source interconnect line 41 form a pair, and are not disposed in the middle of the source interconnect line 41. That is, the repairing thin film parts 20C are defined so as to leave the interlayer insulation film 12 in the middle of the source interconnect line 41. Thus, damages to the source interconnect line 41 which can be caused by laser irradiation for the removal of the interlayer insulation film 12 occurs on only one side of the source interconnect line 41 subjected to the repair connection. In other words, the middle part of the source interconnect line 41 which is not subjected to the repair connection is not damaged. This reduces a likelihood that a break results from damages to the source interconnect line 41 caused by laser irradiation.

[0145] Also, two of the repairing thin film parts 20C form a pair. Thus, the exposed area of the source interconnect lines 41 is made larger as compared with the configuration in which the repairing thin film parts are provided on only one of the two widthwise edges of the source interconnect line 41 such as the repairing thin film parts 20B of the third preferred embodiment. This decreases the contact resistance with the repairing conductive film RL formed thereon to improve the reliability of the connection repair.

[0146] In the repairing thin film parts 20C, the thickness of the interlayer insulation film 12 left in the extension parts is made approximately equal to the thickness of the source interconnect line 41. Thus, when the through holes LP are provided in the repairing thin film parts 20C, the upper surface of the interlayer insulation film 12 in the extension parts is substantially flush with the upper surface of the source interconnect line 41, so that the step therebetween is reduced. This provides good coverage of the repairing conductive film RL formed thereon to further improve the reliability of the connection repair.

Modifications

[0147] In the fourth preferred embodiment described above, the repairing conductive film RL is formed so as to completely cover the two pairs of repairing thin film parts 20C, as shown in FIGS. 44 and 45. However, as shown in FIG. 46, the deposition range of the repairing conductive film RL may be decreased so that the two pairs of repairing thin film parts 20C have portions not covered with the repairing conductive film RL. A. cross-sectional configuration taken along the line C-C of FIG. 46 is shown in FIG. 47. As shown in FIG. 47, the extension parts of the repairing thin film parts 20C have portions not covered with the repairing conductive film RL although portions thereof on the source interconnect line 41 are covered with the repairing conductive film RL. The decrease in the deposition range of the repairing conductive film RL shortens the time required for the deposition to improve productivity.

Fifth Preferred Embodiment

[0148] The repair of the source interconnect lines 41 is described in the first to fourth preferred embodiments according to the present invention described above. The present invention, however, is not limited to the application to the repair of the source interconnect lines, but may be applied to the repair of the gate interconnect lines 21.

[0149] The electronic device according to a fifth preferred embodiment of the present invention will be described with reference to FIGS. 48 to 53. Only components different from those of the first preferred embodiment will be described, and the common components will not be described.

[0150] FIG. 48 is a plan view showing the configuration of one pixel part of a TN type transmissive liquid crystal display panel 200 according to the fifth preferred embodiment, and shows the configuration of the TFT substrate side where the TFTs 30 are arranged in a matrix.

[0151] As shown in FIG. 48, the liquid crystal display panel 200 further includes a plurality of repairing thin film parts 50 provided in a multi-layer film comprised of the gate insulation film 11 (not shown) covering the gate interconnect lines 21 and the interlayer insulation film 12 (not shown) tying on the gate insulation film 11 along the gate interconnect lines 21. An example of break defects produced in a gate interconnect line 21 is shown in FIG. 48, and a broken part BL is formed. This is, however, for the illustration of the repair method according to the present invention, and is not the component of the present invention.

[0152] FIG. 49 is an enlarged view of the gate interconnect line 21 including two repairing thin film parts 50 on either side of the broken part BL of the gate interconnect line 21 shown in FIG. 48 before repair. In FIG. 49, the line D-D traversing one of the repairing thin film parts 50 in the direction of the width of the interconnect line is additionally shown.

[0153] As shown in FIG. 49, the repairing thin film parts 50 are formed so that one of the edges thereof extending in a direction orthogonal to the longitudinal direction of the gate interconnect line 21 overreaches one of the two widthwise edges of the gate et line 21. Parts of the repairing thin film parts 50 which overreach the widthwise edge of the gate interconnect line 21 are referred to as extension parts. A cross-sectional configuration taken along the line D-D of FIG. 49 is shown in FIG. 50.

[0154] Such a repairing thin film part 50 extends through the interlayer insulation film 12, and the thickness of the gate insulation film 11 on the gate interconnect line 21 is decreased in the repairing thin film part 50, as shown in FIG. 50, The thickness of the gate insulation film 11 is similarly decreased as well in the extension part. The thickness of the gate insulation film 11 left in the extension part s approximately equal to the thickness of the gate interconnect line 21. The reason therefor is described in the second preferred embodiment and will not be described in the fifth preferred embodiment. The stepped part on the periphery of the repairing thin film part 50, which is formed by a lithography step and an etching step, has good coverage.

[0155] FIG. 51 is a sectional view showing that the gate interconnect line 21 is exposed in the bottom of a through hole LP1 obtained by removing the gate insulation film 11 in the repairing thin film part 50 by the zapping method. As shown in FIG. 51, the upper surface of the gate insulation film 11 in the extension part of the repairing thin film part 50 and the upper surface of the gate interconnect line 21 are substantially flush with each other in the bottom surface of the through hole LP1.

[0156] Also, the extension length of the extension part of the repairing thin film part 50 is not less than the thickness of the gate insulation film 11 which is not yet decreased. This achieves further planarization of the upper surface of the gate insulation film 11 in the extension part and the upper surface of the gate interconnect line 21 near the one edge of the gate interconnect line 21 as seen in the direction of the width of the interconnect line to further improve the reliability of the connection repair.

[0157] After planarization in the repairing thin film parts 50, a repairing conductive film RL1 predominantly made of tungsten excellent in electrical conductivity is formed, as shown in FIG. 52, by means of a laser CVD apparatus so as to extend over the two repairing thin film parts 50 on either side of the broken part BL as in the first preferred embodiment. In this case, the repairing conductive film RL1 is deposited so as to cover all of the two repairing thin film parts 50. A cross-sectional configuration taken along the line D-D of FIG. 52 is shown in FIG. 53.

[0158] The repairing thin film parts 50 are formed so as to overreach one of the two widthwise edges of the gate interconnect line 21. Thus, damages to the gate interconnect line 21 which can be caused by laser irradiation for the removal of the gate insulation film 11 occurs on only one side of the gate interconnect line 21 subjected to the repair connection. In other words, part of the gate interconnect line 21 which is not subjected to the repair connection is not damaged. This reduces a likelihood that a break results from damages to the gate interconnect line 21 caused by laser irradiation.

[0159] In the repairing thin film parts 50, the thickness of the gate insulation film 11 left in the extension parts is made approximately equal to the thickness of the gate interconnect line 21. Thus, when the through holes LP1 are provided in the repairing thin film parts 50, the upper surface of the gate insulation film 11 in the extension parts is substantially flush with the upper surface of the gate interconnect line 21, so that the step therebetween is reduced. This provides good coverage of the repairing conductive film RL1 formed thereon to further improve the reliability of the connection repair.

[0160] The multi-layer film comprised of the gate insulation film 11 and the interlayer insulation film 12 is present on the gate interconnect line 21, and the thickness of the multi-layer film is greater than that of the source interconnect line 41. When a conventional laser vaporization method (zapping method) in which laser light irradiation is performed without the provision of the repairing thin film parts 50 is used to remove the insulation film on the irradiated area and to thereby form the through holes, asperities on the inner surfaces of the through holes are larger, so that the cross-sectional shape thereof is more irregular. Thus, the effect of improving the reliability of the connection repair by providing the repairing thin film parts 50 is further higher than the effect of improving the reliability of the connection repair by providing the repairing thin film parts in the interlayer insulation film 12.

Modifications

[0161] In the fifth preferred embodiment described above, the repairing thin film parts 50 formed so as to overreach one of the two widthwise edges of the gate interconnect line 21 are provided for the repair of the gate interconnect line 21. The present invention, however, is not limited to this. Similar effects are produced when the configurations of the repairing thin film parts described in the modifications of the first, second and fourth preferred embodiments are applied to the repair of the gate interconnect line.

[0162] In the fifth preferred embodiment, the repairing thin film parts are provided only on the gate interconnect line 21. However, as described in the first to fourth preferred embodiments and the modifications thereof, the repairing thin film parts may be provided also on the source interconnect line 41 at the same time to deal with a variety of break defects.

[0163] Also, the present invention produces similar effects when applied to the repair of the common interconnect lines and when applied to the repair of terminal interconnect lines.

Exemplary Applications

[0164] In the above description, the present invention is applied to the TN type transmissive liquid crystal display devices. However, the present invention may be applied to liquid crystal display devices of IFS (Fringe Field Switching) type, IPS type, MVA (Multi-domain Vertical Alignment) type and the like. Also, the present invention is not limited to the transmissive liquid crystal display devices, but may be applied to reflective and semi-transmissive liquid crystal display devices. In addition, the present invention may be applied to field sequential type liquid crystal display devices having no color filters. The TFTs according to the present invention are not limited to amorphous silicon TFTs. The present invention may be applied to liquid crystal display devices including polysilicon TFTs, low-temperature polysilicon IFTs and the like.

[0165] The application of the present invention is not limited to the liquid crystal display devices. The present invention may be applied to electronic devices having multi-layer interconnection structures such as touch panels and X-ray photodetectors, and produces similar effects when repairing electric interconnect lines.

[0166] The above description is the description of an example of the preferred embodiments of the present invention, and the present invention is not limited to the description of the aforementioned preferred embodiments. One skilled in the art will be able to easily change, add and transform the components of the aforementioned preferred embodiments within the scope of the present invention.

[0167] Also, the aforementioned preferred embodiments include inventions in various stages, and various inventions can be achieved by appropriately combining a plurality of disclosed components. For example, even if several components are omitted from all of the components illustrated in the preferred embodiments, a configuration in which the several components are omitted can be achieved as an invention as long as the problem as described above can be solved and the effects as described can be obtained.

[0168] While the invention has been described in detail, the foregoing description is in all aspects illustrative and not restrictive. It is understood that numerous other modifications and variations can be devised without departing from the scope of the invention.