Array substrate and method of fabricating the same

Abstract

An array substrate includes an oxide semiconductor layer; an etch stopper including a first contact hole exposing each of both sides of the oxide semiconductor layer; source and drain electrodes spaced apart from each other with the oxide semiconductor layer therebetween; a first passivation layer including a contact hole exposing each of both ends of the oxide semiconductor layer and each of ends of the source and drain electrode that oppose the both ends of the oxide semiconductor layer, respectively; and a connection pattern at the second contact hole contacting both the oxide semiconductor layer and each of the source and drain electrodes.

Claims

1. A method of fabricating an array substrate, the method comprising: forming a gate electrode on a substrate, a gate insulating layer on the gate electrode, an island-shaped oxide semiconductor layer on the gate insulating layer corresponding to the gate electrode; forming an etch stopper on the oxide semiconductor layer and entirely over the substrate; forming a source electrode, a drain electrode and a pixel electrode on the etch stopper, wherein the source and drain electrodes are spaced apart from each other with the oxide semiconductor layer therebetween, wherein the pixel electrode is connected to the drain electrode; forming a first passivation layer on the source and drain electrodes and the pixel electrode and entirely over the substrate; forming first and second separate regions including first and second contact holes, respectively, the first separate region is located where an end of the oxide semiconductor layer and an end of the source electrode opposing each other are formed, and the second separate region is located where the other end of the oxide semiconductor layer and an end of the drain electrode opposing each other are formed, forming a conductive material layer at least in the first and second separate regions to form connection patterns which connect the oxide semiconductor layer to the source and drain electrodes at the first and second contact holes, respectively.

2. The method according to claim 1, wherein forming of the first and second separate regions includes: forming a first photoresist pattern on the first passivation layer corresponding to the gate electrode and including the first separate region where an end of the oxide semiconductor layer and an end of the source electrode opposing each other are formed, and the second separate region where the other end of the oxide semiconductor layer and an end of the drain electrode opposing each other are formed, wherein the first and second separate regions are formed by removing a first photoresist thereat; removing the first passivation layer and the etch stopper at the first and second separate regions to form the first contact hole exposing the end of the oxide semiconductor layer and the end of the source electrode, and the second contact hole exposing the other end of the oxide semiconductor layer and the end of the drain electrode; forming a conductive material layer on the first photoresist pattern and entirely over the substrate; and selectively removing the conductive material layer to form connection patterns which connect the oxide semiconductor layer to the source and drain electrodes at the first and second contact holes, respectively.

3. The method according to claim 1, wherein forming the gate electrode, the gate insulating layer, and the oxide semiconductor layer includes: forming a first metal layer, a first insulating layer, an oxide semiconductor material layer sequentially on the substrate; forming a second photoresist pattern and a third photoresist pattern on the oxide semiconductor material layer and having a first thickness and a second thickness, respectively, the second thickness is less than the first thickness; etching the oxide semiconductor material layer, the first insulating layer and the first metal layer using the second and third photoresist patterns to form the gate electrode, the gate insulating layer and the oxide semiconductor patterns which have the same plane shape as that of the gate electrode; performing an ashing to remove the third photoresist pattern; removing the oxide semiconductor pattern exposed by removing the third photoresist pattern to form the island-shaped oxide semiconductor pattern which exposes both sides of the gate insulating layer; and performing a stripping to remove the second photoresist pattern.

4. The method according to claim 1, wherein forming the source electrode, the drain electrode and the pixel electrode on the etch stopper includes: forming a transparent conductive material layer and a second metal layer on the etch stopper; forming a fourth photoresist pattern and a fifth photoresist pattern on the second metal layer and having a third thickness and a fourth thickness, respectively, the fourth thickness is less than the third thickness; etching the second metal layer and the transparent conductive material layer using the fourth and fifth photoresist patterns to form the source and drain electrodes, which each include a lower layer of transparent conductive material and an upper layer of second metal, and a pixel pattern which is in a pixel region and has the same structure as the drain electrode; performing an ashing to remove the fifth photoresist pattern; removing the upper layer of the pixel pattern exposed by removing the fifth photoresist pattern to form the pixel electrode made of transparent conductive material; and performing a stripping to remove the fourth photoresist pattern.

5. The method according to claim 1, further including: forming a gate line on the substrate including a pixel region; forming a gate pad electrode at an end of the gate line; forming a data line on the etch stopper; and forming a data pad electrode at an end of the data line, wherein the data line crosses the gate line to define the pixel region.

6. The method according to claim 1, further including forming a second passivation layer on the first passivation layer and forming a gate pad contact hole exposing the gate pad electrode and a data pad contact hole exposing the data pad electrode, and forming a gate auxiliary pad electrode and forming a data auxiliary pad electrode on the second passivation layer which contacts the gate pad electrode and the data pad electrode through the gate pad contact hole and the data pad contact hole, respectively.

7. The method according to claim 2, wherein selectively removing the conductive material layer to form the connection patterns includes: forming an organic layer on the conductive material layer and filling the first and second separate regions; performing an ashing to remove a portion of the organic layer on the conductive layer and form organic patterns which are other portions of the organic layer filling in the first and second separate regions and reduced in thickness by the ashing; etching the conductive material layer outside the organic patterns to expose the first photoresist pattern and form the connection patterns covered by the respective organic patterns; and removing the first photoresist pattern and the organic patterns.

8. The method according to claim 6, further comprising forming a common electrode on the second passivation layer and including bar-shaped openings in the pixel region when forming the gate auxiliary pad electrode and the data auxiliary pad electrode.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention.

(2) In the drawings:

(3) FIG. 1 is a cross-sectional view illustrating a pixel region including a thin film transistor in an array substrate of an LCD or an OLED according to the related art;

(4) FIG. 2 is a cross-sectional view illustrating a pixel region of an array substrate including a thin film transistor having an oxide semiconductor layer according to the related art;

(5) FIG. 3 is a cross-sectional view illustrating an array substrate including a thin film transistor having an oxide semiconductor layer according to an embodiment of the present invention;

(6) FIGS. 4A to 4P are cross-sectional views illustrating a method of fabricating an array substrate including a thin film transistor using an oxide semiconductor layer according to an embodiment of the present invention;

(7) FIGS. 5A and 5B are cross-sectional views illustrating a method of forming connection patterns according to another embodiment of the present invention; and

(8) FIGS. 6A to 6F are cross-sectional views illustrating a method of forming connection patterns according to yet another embodiment of the present invention.

DETAILED DESCRIPTION OF THE ILLUSTRATED EMBODIMENTS

(9) Reference will now be made in detail to the illustrated embodiments of the present invention, which are illustrated in the accompanying drawings.

(10) FIG. 3 is a cross-sectional view illustrating an array substrate including a thin film transistor having an oxide semiconductor layer according to an embodiment of the present invention. For the purposes of explanation, a region where a thin film transistor Tr is formed in a pixel region P is defined as a switching region TrA.

(11) Referring to FIG. 3, a gate line (not shown) is formed on an insulating substrate 101 made of transparent glass or plastic. The gate line may have a single-layered structure using a low resistance metal material, for example, aluminum (Al), aluminum alloy (e.g., AlNd), copper (Cu), copper alloy, molybdenum (Mo), or molybdenum titanium (MoTi), or a multiple-layered structure using two or more of the above-described metal materials.

(12) A gate electrode 105 is formed in the switching region TrA. The gate electrode 105 may be formed as a portion of the gate line, or extend from the gate line.

(13) In this embodiment, an example of the gate line and the gate electrode 105 having a single-layered structure is given.

(14) A gate insulating layer 110 made of insulating material, for example, silicon oxide (SiO.sub.2) or silicon nitride (SiNx) is formed on the gate line and the gate electrode 105.

(15) In this embodiment, the gate insulating layer 110 has a plane shape as the gate line and the gate electrode 105 and is formed directly on the gate line and the gate electrode 105.

(16) In the switching region TrA, an island-shaped oxide semiconductor layer 120 made of indium gallium zinc oxide (IGZO), zinc tin oxide (ZTO), or zinc indium oxide (ZIO) is formed on the gate insulating layer 110 over the gate electrode 105. The oxide semiconductor layer 120 has an area less than the gate electrode 105 and is formed corresponding to a center portion of the gate electrode 105, and thus the gate insulating layer 110 is exposed outside the oxide semiconductor layer 120.

(17) An etch stopper 123 made of inorganic insulating material, for example, silicon oxide (SiO.sub.2) or silicon nitride (SiNx) is formed entirely on the substrate 101 having the oxide semiconductor layer 120.

(18) The etch stopper 123 includes a contact hole 124 in the semiconductor layer 120 exposing each of both side surfaces of the oxide semiconductor layer 120 with respect to a center of the oxide semiconductor layer 120.

(19) A data line (not shown) crossing the gate line to define the pixel region P is formed on the etch stopper 123, and source and drain electrodes 133 and 136 spaced apart from each other are formed on the etch stopper 123.

(20) A pixel electrode 140 contacting the drain electrode 136 and made of transparent conductive material, for example, indium tin oxide (ITO) or indium zinc oxide (IZO) is formed on the etch stopper 123 in the pixel region P. The pixel electrode has a plate shape in the pixel region P.

(21) Ends of the source and drain electrodes opposing each other substantially coincide with the corresponding edges of the etch stopper 123 therebelow, and are spaced apart from the corresponding both ends or side surfaces of the oxide semiconductor layer 120.

(22) Even though not shown in the drawings, the other end of the source electrode 133 is connected to the data line.

(23) The data line, and the source and drain electrodes 133 and 136 may have respective lower layers 133a and 136a, which are each made of the same material as the pixel electrode 140, and respective upper layers 133b and 136b, and the upper layer may have a single-layered structure using a low resistance material, for example, aluminum (Al), aluminum alloy (e.g., AlNd), copper (Cu), copper alloy, molybdenum (Mo), or molybdenum titanium (MoTi), or a multiple-layered structure which has using two or more of the above-described metal materials.

(24) As such, the data line and the source and drain electrodes 133 and 136 have the multiple layers consisting of the lower layers 133a and 136a and the upper layers 133b and 136b. In the embodiment, an example of the data line and the source and drain electrodes 133 and 136 having double layers is given.

(25) A first passivation layer 143 is formed on the data line and the source and drain electrodes 133 and 136.

(26) The first passivation layer 143 includes two contact holes which exposes the both ends of the oxide semiconductor layer 120 and the corresponding ends of the source and drain electrodes 133 and 136 which oppose the both ends of the oxide semiconductor layer 120.

(27) Connection patterns 153a and 153b are formed at the corresponding contact holes of the first passivation layer 143 and made of transparent conductive material, for example, indium tin oxide (ITO) or indium zinc oxide (IZO). The connection pattern 153a contacts the end of the source electrode 133 and the corresponding end of the oxide semiconductor layer 120, and the connection pattern 153b contacts the end of the drain electrode 136 and the corresponding end of the oxide semiconductor layer 120.

(28) A second passivation layer 158 is formed entirely on the substrate 101 having the connection patterns 153a and 153b.

(29) The second passivation layer 158 includes a gate pad contact hole 160 exposing a gate pad electrode 107 located at the end of the gate line and a data pad contact hole (not shown) exposing a data pad electrode (not shown) located at the end of the data line.

(30) A common electrode 165 is formed on the second passivation layer 158 in the pixel region P and made of transparent conductive material, for example, indium tin oxide (ITO) or indium zinc oxide (IZO), and includes bar-shaped openings op.

(31) In the pad portion PA, a gate auxiliary pad electrode contacting the gate pad electrode 107 and a data auxiliary pad electrode contacting the data pad electrode are formed.

(32) The array substrate 101 including the above-described configuration is an array substrate for a fringe field switching (FFS) mode LCD in which the pixel electrode 140 and the common electrode 165 having the openings op produce an electric field.

(33) The array substrate 101 can be fabricated with five mask processes. Accordingly, mask processes can be reduced by two or three mask processes compared to the related art array substrate for FFS mode LCD.

(34) In this regard, the related art array substrate including an oxide semiconductor layer and island-shaped etch stopper requires five or six mask processes until forming a pixel electrode. In addition, to use the related art array substrate as an array substrate for a FFS mode LCD, it further requires two more mask processes of forming a second passivation layer, which is on a pixel electrode and has gate and data pad contact holes, and forming a bar-shaped common electrode. As a result, the related art array substrate for a FFS mode LCD requires seven or eight mask processes.

(35) However, the array substrate 101 of the embodiment can be fabricated with five mask processes. Accordingly, a number of mask processes can be reduced by two or three.

(36) Further, the etch stopper 123 is formed on the entire surface of the substrate 101, and the source and drain electrodes 133 and 136 are connected with the oxide semiconductor layer 120 through the connection patterns 153a and 153b. Accordingly, overlapping area between the source and drain electrodes 133 and 136 and the gate electrode 105 can be reduced compared to the related art. Therefore, parasitic capacitance due to overlapping between the source and drain electrodes 133 and 136 and the gate electrode 105 can be reduced.

(37) A method of fabricating the array substrate according to the embodiment of the present invention is explained with reference to FIGS. 4A to 4P.

(38) FIGS. 4A to 4P are cross-sectional views illustrating a method of fabricating an array substrate including a thin film transistor according to the embodiment of the present invention. For the purposes of explanation, a pad portion where a gate pad electrode at an end of a gate line is formed is shown in the drawings along with a pixel region P.

(39) Referring to FIG. 4A, one or at least two selected from a low resistance metal material group consisting of, for example, copper (Cu), copper alloy, aluminum (Al), aluminum alloy (e.g., AlNd), molybdenum (Mo), and molybdenum titanium (MoTi) is deposited on a transparent substrate 101 made of glass or plastic to form a first metal layer 102 having a single-layered or multiple-layered structure.

(40) Then, an inorganic insulating material, for example, silicon oxide (SiO.sub.2) or silicon nitride (SiNx) is deposited on the first metal layer 102 to form a first insulating layer 104. Then, an oxide semiconductor material, for example, indium gallium zinc oxide (IGZO), zinc tin oxide (ZTO) or zinc indium oxide (ZIO) is deposited to form an oxide semiconductor material layer 106 on the first insulating layer 104.

(41) Then, a photoresist is deposited on the oxide semiconductor material layer 106 to form a first photoresist layer 181, and then the first photoresist layer 181 is light-exposed using a photo mask 191 which includes a transmissive region TA, a blocking region BA, and a semi-transmissive region HTA. The photo mask 191 may be a diffraction mask or halftone mask.

(42) Referring to FIG. 4B, the first photoresist layer 181 is developed to form a first photoresist pattern 181a having a first thickness and a second photoresist pattern 181b having a second thickness less than the first thickness.

(43) The first photoresist pattern 181a is formed corresponding to a portion where an island-shaped oxide semiconductor pattern (120 of FIG. 4P) is formed in the switching region TrA, and the second photoresist pattern 181b is formed corresponding to a portion where a gate line (not shown) and a gate electrode (105 of FIG. 4P) are formed.

(44) The second photoresist pattern 181b is formed corresponding to a portion where a gate pad electrode (107 of FIG. 4P) at an end of the gate line is formed.

(45) Since the oxide semiconductor layer is configured to overlap the gate electrode, the first photoresist pattern 181a is further formed at an overlapping part between the gate electrode and the oxide semiconductor layer out of the portion where the gate electrode is formed.

(46) Referring to FIG. 4C, the oxide semiconductor material layer 106, the first insulating layer 104 and the first metal layer 102 are sequentially or simultaneously etched using the first and second photoresist patterns 181a and 181b as an etching mask to form the gate line, and a gate pad electrode 107 in the pad portion PA.

(47) At the same process, the gate electrode 105 connected to the gate line is formed, and a gate insulating layer 110 and an oxide semiconductor pattern 112, which have the same plane shape with the gate electrode 105 and the gate line, are formed.

(48) Referring to FIG. 4D, an ashing is performed to remove the second photoresist pattern 181b and thus expose the oxide semiconductor pattern 112 outside the first photoresist pattern 181a.

(49) Through the ashing, the first photoresist pattern is reduced in thickness and remains on the center portion of the oxide semiconductor pattern 112.

(50) Referring to FIG. 4E, the oxide semiconductor pattern 112 exposed outside the first photoresist pattern 181a is removed to form an island-shaped oxide semiconductor layer 120 corresponding to a center portion of the gate electrode 105 in the switching region TrA.

(51) In this step, the oxide semiconductor pattern 112 over the gate line is all removed. Accordingly, the oxide semiconductor layer 120 may remain on the substrate 101 as only component made of oxide semiconductor material.

(52) The gate insulating layer 110 over the gate line and the gate pad electrode 107 has the same plane shape as the gate line and the gate pad electrode 107.

(53) Referring to FIG. 4F, a stripping is performed to remove the first photoresist pattern 181a and thus expose the oxide semiconductor layer 120.

(54) Then, an inorganic insulating material, for example, silicon oxide (SiO.sub.2) or silicon nitride (SiNx) is formed on the substrate 101 having the oxide semiconductor layer to form a second insulating layer 122.

(55) Then, referring to FIG. 4G, a transparent conductive material, for example, indium tin oxide (ITO) or indium zinc oxide (IZO) is deposited on the second insulating layer 122 to form a first transparent conductive material layer. Then, one or at least two selected from a low resistance metal material group consisting of, for example, copper (Cu), copper alloy, aluminum (Al), aluminum alloy (e.g., AlNd), molybdenum (Mo), and molybdenum titanium (MoTi) is deposited on a first transparent conductive material layer (not shown) to form a second metal layer (not shown) having a single-layered or multiple-layered structure.

(56) Then, a second photoresist layer is formed on the second metal layer and light-exposed using a photo mask which includes a transmissive region TA, a blocking region BA, and a semi-transmissive region HTA to form a third photoresist pattern having a third thickness and a fourth photoresist pattern to having a fourth thickness less than the third thickness.

(57) Then, the second metal layer and the first transparent conductive material layer are etched using the third and fourth photoresist patterns to form a data line (not shown) crossing the gate line, a data pad electrode at an end of the data line, and source and drain electrodes 133 and 136 spaced apart from each other with the oxide semiconductor layer 120 therebetween.

(58) Then, an ashing is performed to remove the fourth photoresist pattern and thus expose the second metal layer corresponding to a center portion of the pixel region P. The third photoresist pattern remains on the data line and the source and drain electrodes 133 and 136.

(59) Then, the second metal layer is etched using the third photoresist pattern to form a pixel electrode 140 in the pixel region P.

(60) The pixel electrode 140 extends from the lower layer 136a of the drain electrode 136 and is thus electrically connected to the drain electrode 136.

(61) Then, a stripping is performed to remove the photoresist pattern on the data line and the source and drain electrodes 133 and 136 and thus expose the data line and the source and drain electrodes 133 and 136.

(62) The data line and the source and drain electrodes 133 and 136 have the lower layers 133a and 136a and the upper layers 133b and 136b having a single-layered or multiple-layered structure. Accordingly, the data line and the source and drain electrodes 133 and 136 have at least double-layered structure.

(63) Referring to FIG. 4H, an inorganic insulating material, for example, silicon oxide (SiO.sub.2) or silicon nitride (SiNx), or an organic insulating material, for example, photo acrylic or benzocyclobutene (BCB) is deposited on the substrate 101 having the source and drain electrodes 133 and 136 to form a first passivation layer 143.

(64) Referring to FIG. 4I, a photoresist is deposited on the first passivation layer 143 to form a third photoresist layer (not shown). Then, the third photoresist pattern is light-exposed using a photo mask having a transmissive region and a blocking region and developed to form a fifth photoresist pattern 195. In this process, both ends of the oxide semiconductor layer 120, the corresponding ends of the source and drain electrodes 133 and 136 which oppose the both ends of the oxide semiconductor layer 120, and separate regions between the both ends of the oxide semiconductor layer 120 and the corresponding ends of the source and drain electrodes 133 and 136 are exposed.

(65) Then, the first passivation layer 143 and the second insulating layer 122 are etched using the fifth photoresist pattern 195 to expose the ends of the source and drain electrodes 133 and 136 and the ends of the oxide semiconductor layer 120.

(66) Through this process, the second insulating layer 122 becomes an etch stopper 123 including a semiconductor contact hole 124 that exposes each of the both ends of the oxide semiconductor layer 120.

(67) The etch stopper 123 is formed on the oxide semiconductor layer 120 and the other regions of the substrate 101 as well.

(68) Since the etch stopper 123 does not have an island shape, the source and drain electrodes 133 and 136 do not need to be formed long to secure a contact margin with the oxide semiconductor layer 77 exposed outside the etch stopper 123.

(69) Accordingly, an overlapping area between the source and drain electrodes 133 and 136 and the gate electrode 105 can be reduced, and thus parasitic due to the overlapping can be reduced.

(70) Referring to FIG. 4J, a transparent conductive material, for example, indium tin oxide (ITO) or indium zinc oxide (IZO), or a low resistance metal material, for example, copper (Cu), copper alloy, aluminum (Al), aluminum alloy (e.g., AlNd), molybdenum (Mo) or molybdenum titanium (MoTi) is deposited on the fifth photoresist pattern 195 to form a conductive material layer 150.

(71) The conductive material layer 150 located at portions exposed outside the fifth photoresist pattern 195 (which is referred to as first and second separate regions A1 and A2) contacts the ends of the source and drain electrodes 133 and 136, which are exposed outside the first passivation layer 143, together with the ends of the oxide semiconductor layer 120 which are exposed through the semiconductor contact hole 124.

(72) Referring to FIG. 4K, an organic material is deposited on the conductive material layer 150 to form an organic layer 198, which fills the separate regions A1 and A2 and is entirely on the substrate 101.

(73) The organic layer 198 includes a portion 198a, which is formed over the photoresist pattern 195, and the other portion 198b which is formed to fill the separate regions A1 and A2 is different in thickness from the portion 198a. The other portion 198b is much greater than the portion 198a.

(74) Referring to FIG. 4L, an ashing is performed for the organic layer 198 to reduce thickness of the organic layer 198.

(75) In the ashing, the thickness of the organic layer 198 is reduced at the same rate over all. The ashing is performed until a surface of the conductive material layer 150 over the second photoresist pattern 195 is exposed. Accordingly, the portions of the organic layer 198 except for the other portion 198b formed at the first and second separate regions A1 and A2 are removed.

(76) Since the other portion 198b is formed thick at the first and second separate regions A1 and A2, the other portion 198b is reduced in thickness and remains there even when the ashing is finished. The remaining other portion 198b becomes a organic pattern 199.

(77) Referring to FIG. 4M, the conductive material layer 150 outside the organic pattern 199 is etched to expose the fifth photoresist pattern 195.

(78) In this etching, portions of the conductive material layer 150 covered by the organic pattern 199 remain and become connection patterns 153a and 153b that contact the respective both ends of the oxide semiconductor layer 120 and the respective ends of the source and drain electrodes 133 and 136.

(79) The connection patterns 153a and 153b are formed at the regions where the corresponding semiconductor contact holes are formed. In other words, two connection patterns are formed in each switching region TrA. The connection patterns 153a and 153b are spaced apart from each other.

(80) The gate electrode 105, the gate insulating layer 110, the oxide semiconductor layer 120, the etch stopper 123 having the semiconductor contact hole 124, the source and drain electrodes 133 and 136, and the connection patterns 153a and 153b in the switching region TrA form a thin film transistor Tr.

(81) Referring to FIG. 4N, a stripping is performed to remove the fifth photoresist pattern 195 and the organic pattern 199 and thus expose the connection patterns 153a and 153b and the first passivation layer 143.

(82) Another method of forming the connection patterns 153a and 153b using a lift-off method may be employed, which is explained with reference to FIGS. 5A and 5B.

(83) Referring to FIGS. 5A and 5B, the conductive material layer 150 is formed on the fifth photoresist pattern 195, and then, without forming the organic layer 199 shown in FIG. 4M, a stripping is performed to remove the fifth photoresist pattern 195. Accordingly, performed is a lift-off process of removing the conductive material layer 150 on the fifth photoresist pattern 195 together with the fifth photoresist pattern 195.

(84) Through the lift-off process, the conductive material layer 150 remains at the first and second separate regions A1 and A2 and becomes the connection patterns 153a and 153b.

(85) The method using the organic pattern 199 can form the connection patterns 153a and 153b more stably than the method using the lift-off process.

(86) The other method has advantage of reduction of process compared to the method using the organic pattern 199. However, when a stripping solution to remove the fifth photoresist pattern 195 does not permeates an interface between the fifth photoresist pattern 195 and the second passivation layer 143 due to the conductive material layer 150, a pattern defect occurs. Accordingly, the method using the organic pattern 199 is preferable in view of stability.

(87) However, it is obvious that the connection patterns 153a and 153b can be formed by the alternative method.

(88) Referring to FIG. 4O, after the connection patterns 153a and 153b are formed with one of the above-described methods, an inorganic insulating material, for example, silicon oxide (SiO.sub.2) or silicon nitride (SiNx), or an organic insulating material, for example, photo acrylic is deposited on the connection patterns 153a and 153b and the first passivation layer 143 to form a second passivation layer 158.

(89) Then, a mask process of deposition of photoresist, light exposure, developing, etching and stripping is performed for the second passivation layer 158, or a mask process of deposition of photoresist, light exposure, developing, etching and stripping is performed for the second passivation layer 158 made of photo acrylic. The second passivation layer 158 is patterned through this process, and thus a gate pad contact hole 160 exposing the gate pad electrode 107 and a data pad contact hole (not shown) exposing the data pad electrode are formed at the pad portion PA.

(90) In patterning the second passivation layer 158, the first passivation layer 143, the etch stopper 123 and the gate insulating layer 110 over the gate pad electrode 107 are also removed to expose the gate pad electrode 107, and the first passivation layer 143 over the data pad electrode is also removed to expose the data pad electrode.

(91) Referring to FIG. 4P, a transparent conductive material, for example, indium tin oxide (ITO) or indium zinc oxide (IZO) is deposited on the second passivation layer 158 to form a second transparent conductive material layer (not shown), and then the second transparent conductive material layer is patterned in a mask process to form a common electrode including bar-shaped openings op in each pixel region P. At the same process, a gate auxiliary pad electrode 167 contacting the gate pad electrode 107 through the gate pad contact hole 160 and a data auxiliary pad electrode (not shown) contacting the gate pad electrode through the gate pad contact hole are formed at the pad portion PA.

(92) Through the above-described processes, the array substrate of the embodiment can be fabricated.

(93) Yet another method may be employed, which is explained with reference to FIGS. 6A to 6F. This other method is similar to the above-described method except for forming the connection patterns 153a and 153b.

(94) Referring to FIG. 6A, the first passivation layer 143 is formed on the source and drain electrodes 133 and 136, and a mask process is performed to pattern the first passivation layer 143 and the second insulating layer (122 of FIG. 4H). Accordingly, first and second contact holes ch1 and ch2 are formed that expose the ends of the source and drain electrodes 133 and 136 and the both ends of the oxide semiconductor layer 120.

(95) The second insulating layer 122 becomes an etch stopper 123 having the semiconductor contact holes 124 that expose the both ends of the oxide semiconductor layer 120.

(96) In this method, it is preferred that the first passivation layer 143 is made of an organic insulating material, for example, photo acrylic or benzocyclobutene (BCB) to have a substantially flat surface.

(97) When the first passivation layer 143 is made of an inorganic insulating material, a center portion of the pixel region P is lower than a portion where the source and drain electrodes 133 and 136 are formed. In this case, in forming the connection patterns 153a and 153b later, the connection patterns 153a and 153b may not be desirably formed. Accordingly, it is preferred that the first passivation layer 143 made of organic insulating material is used and thus the surface thereof is located higher than the source and drain electrodes 133 and flat.

(98) Referring to FIG. 6B, a transparent conductive material, for example, indium tin oxide (ITO) or indium zinc oxide (IZO), or a low resistance metal material, for example, copper (Cu), copper alloy, aluminum (Al), aluminum alloy (e.g., AlNd), molybdenum (Mo), or molybdenum titanium (MoTi) is deposited on the first passivation layer 143 to form a conductive material layer 150.

(99) The conductive material layer 150 contacts the ends of the source and drain electrodes 133 and 136, which is exposed through the contact holes ch1 and ch2 of the first passivation layer 143, and the both ends of the oxide semiconductor layer 120 which is exposed through the semiconductor contact holes 124.

(100) Referring to FIG. 6C, an organic material is deposited on the conductive material layer 150 to form an organic layer 198, which fills the first and second contact holes ch1 and ch2. The organic layer 198 has a substantially flat surface, a portion thereof at the contact holes ch1 and ch2 is thicker than other portion thereof.

(101) Referring to FIG. 6D, an ashing is performed for the organic layer 198 to reduce thickness thereof.

(102) In the ashing, the thickness of the organic layer 198 is reduced at the same rate over all. The ashing is performed until a surface of the conductive material layer 150 over the first passivation layer 143 is exposed. Accordingly, portions of the organic layer 198 except for the portion 199 formed at the first and second contact holes ch1 and ch2 are removed.

(103) Since the other portion 199 is formed thick at the first and second contact holes ch1 and ch2, the portion 199 is reduced in thickness and remains there even when the ashing is finished. The remaining portion 199 becomes an organic pattern 199.

(104) Referring to FIG. 6E, the conductive material layer 150 outside the organic pattern 199 is etched to expose the first passivation layer 143.

(105) In this etching, portions of the conductive material layer 150 covered by the organic pattern 199 remain and become connection patterns 153a and 153b that contact the respective both ends of the oxide semiconductor layer 120 and the respective ends of the source and drain electrodes 133 and 136.

(106) Referring to FIG. 6F, the organic patterns 199 is removed by a stripping to expose the connection patterns 153a and 153b.

(107) The processes after the process shown in FIG. 6F are similar to those of FIGS. 4O and 4P, and detailed explanations are omitted.

(108) As described above, according to the embodiment, the array substrate can be fabricated can be fabricated with five mask processes. Accordingly, a number of mask processes can be reduced by two or three.

(109) Further, the etch stopper is formed on the entire surface of the substrate, and the source and drain electrodes are connected with the oxide semiconductor layer through the connection patterns. Accordingly, overlapping area between the source and drain electrodes and the gate electrode can be reduced compared to the related art. Therefore, parasitic capacitance due to overlapping between the source and drain electrodes and the gate electrode can be reduced.

(110) It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the scope of the invention. Thus, it is intended that the present invention cover the modifications and variations of this invention provided they come within the scope of the appended claims and their equivalents.