Nano-structure assembly and nano-device comprising same

Abstract

Provided are a nano-structure assembly including an insulating substrate; and a nano-structure formed on the insulating substrate, and a nano-device including the same.

Claims

1. A nano-structure assembly comprising: an insulating substrate; and a plurality of nano-structures directly disposed on the insulating substrate; and a semiconductor layer covering the plurality of nano-structures, wherein the insulating substrate includes hexagonal boron nitride (h-BN), wherein the plurality of nano-structures includes a semiconductor, wherein the insulating substrate has a thickness in the range of 0.35 nm to 100 nm and a sheet resistance in the range of 1 GΩ/□ or greater, wherein a length of the plurality of nano-structures is larger than the thickness of the plurality of nano-structures, wherein the plurality of nano-structures is embedded in the semiconductor layer.

2. The nano-structure assembly according to claim 1 wherein a ratio of length to diameter of the nano-structure is in a range of 1 to 1000.

3. The nano-structure assembly according to claim 1 wherein the plurality of nano-structures includes at least one selected from the group consisting of nanorods, nanoneedles, nanotubes, nanoflowers and nanowalls disposed on the insulating substrate.

4. The nano-structure assembly according to claim 2 wherein the plurality of nano-structures includes at least one selected from the oxide group comprising ZnO, TiO.sub.2, Al.sub.2O.sub.3, SnO.sub.2, SiO.sub.2, In.sub.2O.sub.3, CdO, MgO, CaO, SrO, BaO, NiO, Cu.sub.2O, and CuO; the nitride group comprising GaN, InGaN, AlGaN; the carbide group comprising SiC; and the III-V group or the II-VI group compounds comprising GaAs, GaP, InP, GaInP and AlGaAs.

5. The nano-structure assembly according to claim 2 comprising a coating layer disposed on a surface of the plurality of nanostructures.

6. The nano-structure assembly according to claim 5, wherein the coating layer includes a plurality of junctions with the nano-structure.

7. The nano-structure assembly according to claim 1 wherein the semiconductor layer includes a composition identical to or different from a composition of the plurality of nanostructures.

8. A nano-device comprising: an insulating substrate; a plurality of nano-structures disposed on one surface of the insulating substrate; a semiconductor layer covering the plurality of nano-structures, a source electrode and a drain electrode, disposed on the semiconductor layer; and a gate electrode disposed on the other surface of the insulating substrate, wherein the insulating substrate includes hexagonal boron nitride (h-BN), wherein the insulating substrate has a thickness in the range of 0.35 nm to 100 nm and a sheet resistance in the range of 1 GΩ/□ or greater, wherein a length of the plurality of nano-structures is larger than the thickness of the plurality of nano-structures, wherein the plurality of nano-structures is embedded in the semiconductor layer.

9. A nano-device comprising: an insulating substrate; a plurality of nano-structures disposed on one surface of the insulating substrate; a semiconductor layer covering the plurality of nano-structures; and a source electrode, a drain electrode and a gate electrode which are disposed on the insulating substrate, wherein a part of the insulating substrate corresponding to the source electrode and the drain electrode is etched, wherein the insulating substrate includes hexagonal boron nitride (h-BN), wherein the insulating substrate has a thickness in the range of 0.35 nm to 100 nm and a sheet resistance in the range of 1 GΩ/□ or greater, wherein a length of the plurality of nano-structures is larger than the thickness of the plurality of nano-structures, wherein the plurality of nano-structures is embedded in the semiconductor layer.

10. The nano-device according to claim 8 wherein the semiconductor layer has a composition identical to or different from a composition of the plurality of nano-structures.

11. The nano-device according to claim 9 wherein the semiconductor layer has a composition identical to or different from a composition of the plurality of nano-structures.

Description

DESCRIPTION OF DRAWINGS

(1) FIG. 1 is a conceptual diagram of a nano-structure assembly according to an embodiment of the present invention,

(2) FIGS. 2a, 2b and 2c are diagrams showing various shapes of a nano-structure according to an embodiment of the present invention,

(3) FIGS. 3a and 3b are diagrams showing various shapes of a coating layer formed on the nano-structure according to an embodiment of the present invention,

(4) FIG. 4 is a conceptual diagram showing the state in which the thin film layer is formed on the nano-structure assembly according to an embodiment of the present invention,

(5) FIG. 5 is a conceptual diagram of a nano-device according to an embodiment of the present invention,

(6) FIG. 6 illustrates a modification of the nano-device according to an embodiment of the present invention,

(7) FIG. 7 is a conceptual diagram of a nano-device according to another embodiment of the present invention,

(8) FIG. 8 is a modification of the nano-device according to another embodiment of the present invention.

MODES OF THE INVENTION

(9) Since the present invention may have various modifications and embodiments, some exemplary embodiments are shown in the drawings and will be described in further detail.

(10) It should be understood, however, that there is no intent to limit exemplary embodiments to the particular forms disclosed, but to the contrary, exemplary embodiments are to cover all modifications, equivalents, and alternatives falling within the scope of the present invention.

(11) In the embodiments described below, it is to be understood that the terms “comprise” and/or “have” as used herein specify the presence of stated features, numerals, steps, operations, components, elements or combinations thereof, but do not preclude the presence or addition of one or more other features, numerals, steps, operations, components, elements or combinations thereof.

(12) Also, in the drawings, sizes of elements may be exaggerated or contracted for purposes of clarity and convenience of description.

(13) Some embodiments of the present invention are described below in further detail with reference to the accompanying drawings. Those components that are the same are described using the same reference numeral throughout the drawings, and redundant descriptions thereof may not be repeated.

(14) FIG. 1 is a conceptual diagram of a nano-structure assembly according to an embodiment of the present invention, and FIGS. 2a, 2b and 2c are diagrams showing various shapes of nano-structures according to an embodiment of the present invention.

(15) As illustrated in FIG. 1, the nano-structure assembly according to an embodiment of the present invention includes an insulating substrate 120 and a nano-structure 200 formed on the insulating substrate 120.

(16) As the insulating substrate 120, among various insulating materials, a substrate composed of boron nitride may be selected.

(17) Boron nitrides can be broadly categorized into two types, hexagonal boron nitride (hBN) and cubic boron nitride (cBN). Of the two, hexagonal boron nitride (h-BN) has a layered structure similar to graphite, and excellent transparency, thermal stability, electrical insulating property, thermal conductivity and heat radiating property. Hereinafter, it will be discussed with a hexagonal boron nitride substrate as the insulating substrate.

(18) The hexagonal boron nitride substrate 120 can be manufactured by being formed on a separate growth substrate 110 and then peeled off. More specifically, the hexagonal boron nitride substrate 120 may be manufactured by flowing a boron (B) source and a nitride (N) source into a chamber in which a nickel (Ni) or copper (Cu) substrate is deposited. Here, a small amount of vapor may be flowed into the chamber to prevent carbon contamination.

(19) Also, the thickness of the hexagonal boron nitride substrate 120 is preferably in the range of 0.35 nm to 100 nm. With the thickness less than 0.35 nm, it is difficult to secure sufficient strength, whereas the thickness greater than 100 nm leads to undesirable opacity in the substrate.

(20) Sheet resistance of the hexagonal boron nitride substrate 120 is preferably 1 GΩ/□ or greater. With the surface resistance below 1 GΩ/□, the hexagonal boron nitride substrate may undesirably act as a channel for leakage current.

(21) The nano-structure 200 grows on the hexagonal boron nitride substrate 120 in practically a vertical direction. These nano-structures 200 can be formed by chemical vapor deposition (CVD) including metalorganic chemical vapor deposition (MOCVD), sputtering, thermal or electron beam evaporation, pulse laser deposition (PLD), or molecular beam epitaxy (MBE).

(22) The nano-structure 200 may include at least one selected from the group consisting of oxides, such as ZnO, TiO.sub.2, Al.sub.2O.sub.3 SnO.sub.2, SiO.sub.2, In.sub.2O.sub.3, CdO, MgO, CaO, SrO, BaO, NiO, Cu.sub.2O, and CuO; nitrides, such as GaN, InGaN, AlGaN; carbides such as SiC; and □-□ and □-□ group compounds such as GaAs, GaP, InP, GaInP or AlGaAs.

(23) Although the nano-structure 200 illustrated in FIG. 1 is in the shape of nanorods 202 grown on the hexagonal boron nitride substrate 120, the nano-structure 200 may be embodied in other shapes such as nanoneedles 202 as depicted in FIG. 2a or nanowalls 202 as depicted in FIG. 2b. Other known shapes of nano-structures (nanotubes, nanoflowers, etc.) are also viable.

(24) Also, as illustrated in FIG. 2c, with a masking layer 130 formed on the hexagonal boron nitride substrate 120 and a plurality of openings 131 formed on the masking layer 130, nano-structures in various shapes such as nanoneedles 202, nanowalls 203, nanotubes 204 can be formed. Here, the shape of the openings 131 can be variously modified in consideration of the density, arrangement and shapes of the nano-structures, and the distance between the openings 131 may be in the range of 1 nm to 1000 nm.

(25) The diameter or thickness of the nano-structure 200 may be in the range of 10 nm to 100 um, and the height of the nano-structure 200 may be in the range of 10 nm to 100 um. Also, the ratio of length to diameter of the nano-structure 200 may range from 1 to 1000. However, these figures may vary depending on the type of a nano-structure, the form of a nano-device, and their characteristics.

(26) As illustrated in FIG. 1, and FIGS. 2a, 2b and 2c, the nano-structures 200 are disposed apart from each other on the hexagonal boron nitride substrate 120, but the density of the nano-structures 200 can be suitably adjusted.

(27) FIGS. 3a and 3b are diagrams showing various shapes of the coating layer formed on the nano-structure according to an embodiment of the present invention.

(28) As illustrated in FIG. 3, various types of the coating layer 210 may be formed on the nano-structure 200. The coating layer 210 may be formed to a thickness in the range of 0.1 nm to 100 mm. Specifically, as illustrated in FIG. 3a, the coating layer 210 may be formed of p-type semiconducting multi-layers whereas the nano-structure 200 may be formed of an n-type semiconducting material, thereby having a p-n junction. For example, the p-type and n-type can be easily prepared by a method generally known in the process of manufacturing semiconductors, such as doping with an appropriate dopant, with 3 or 5 valence electrons.

(29) Alternatively, as shown in FIG. 3b, the first coating layer 220 may be formed of a material with a low band-gap and the second coating layer 230 may be formed of a material with a high band-gap, thereby having a quantum well structure. The energy band gap can be controlled by controlling the types of the coating layers.

(30) For example, the first coating layer 220 may be manufactured with ZnO (bandgap: 3.27 eV) and the second coating layer may be manufactured with MgO (bandgap: 8 eV) to form a quantum well structure. The coating layers may be formed by methods such as MOCVD and sputtering. Light-emitting diodes (LED) or laser devices may be manufactured using these nanostructures.

(31) FIG. 4 is a conceptual diagram showing the state in which a thin film layer is formed on the nano-structure assembly according to an embodiment of the present invention.

(32) As illustrated in FIG. 4, a thin film layer 300 covering the nano-structure 200 may be formed to a predetermined thickness. The thin film layer 300 may have a composition identical to or different from a composition of the nano-structure 200.

(33) When the thin film layer 300 has a composition identical to the nano-structure 200, it has an advantage that the formation of the thin film layer 300 is easier. That is, forming the thin film layer 300 directly on the substrate 120 causes a problem that the quality of the thin film layer is lowered. However, as disclosed in the present invention, it is far easier to form the thin film layer 300 on the nano-structure 200 that is already present with a certain height and in a certain density.

(34) FIG. 5 is a conceptual diagram of a nano-device according to an embodiment of the present invention, and FIG. 6 illustrates a modification of the nano-device according to an embodiment of the present invention.

(35) Referring to FIG. 5, the nano-device includes a hexagonal boron nitride substrate 120, a nano-structure 200 formed on one side of the hexagonal boron nitride substrate 120, a thin film layer 300 formed on the nano-structure 200, and a first electrode 410 is formed on the other surface of the hexagonal boron nitride substrate 120, a second electrode 420 is formed on the thin film layer 300. Such nano-devices may be used in applications involving various forms of optical and electrical devices.

(36) Also, referring to FIG. 6, the nano-device according to an embodiment of the present invention includes a hexagonal boron nitride substrate 120, a nano-structure 200 formed on one side of the hexagonal boron nitride substrate 120, a first thin film layer 300 formed on the nano-structure 200, and a second thin film layer 310 formed on the first thin film layer 300 and a first electrode 410 is formed on the first thin film layer 300 and a second electrode 420 is formed on the second thin film layer 300.

(37) Here, the first thin film layer 300 may be an n-type semiconducting layer and the second thin film layer 310 may be a p-type semiconducting layer. Also, a part of the second thin film layer 310 may be mesa-etched so that the first electrode 410 may be formed on the first thin film layer 300. Here, an active layer (not depicted) may be included between the first thin film layer 310 and the second thin film layer 320 if needed. Nano-devices having such structures described above may be light-emitting diodes (LEDs) or photoelectric conversion devices such as laser.

(38) FIG. 7 is a conceptual diagram of a nano-device according to another embodiment of the present invention, and FIG. 8 illustrates a modification of the nano-device according to another embodiment of the present invention.

(39) As illustrated in FIG. 7, the nano-device according to another embodiment of the present invention includes a hexagonal boron nitride substrate 120, a nano-structure 200 grown on one surface of the hexagonal boron nitride substrate 120, a thin film layer 300 formed on the nano-structure 200, a source electrode 430 and a drain electrode 440 which are formed on the thin film layer 300, and a gate electrode 450 formed on the other surface of the hexagonal boron nitride substrate 120.

(40) Also, as illustrated in FIG. 8, the nano-device according to yet another embodiment of the present invention includes a hexagonal boron nitride substrate 120, a nano-structure 200 grown on one surface of the hexagonal boron nitride substrate 120, a thin film layer 300 formed on the nano-structure 200, and a source electrode 430, a drain electrode 440 and a gate electrode 450, which are formed on the hexagonal boron nitride substrate 120.

(41) Here, the hexagonal boron nitride substrate 120 may be etched in a certain pattern so that the source electrode 430 and the drain electrode 440 can be in contact with the nano-structure 200 or/and the thin film layer 300.

(42) Devices with the structures described above can act as a transistor or MOSFET. Here, the thin film layer 300 which is in contact with the source electrode 430 and the drain electrode 440 may be n-type doped. The structures described above are analogous to the structures of FET in general, however, owing to the insulating property of the hexagonal boron nitride substrate 120, a separate insulating layer (dielectric layer) is not required.

(43) However, constitution of these devices is not limited to the above-described, and there are various viable modifications. For example, as illustrated in FIG. 7 and FIG. 8, the source electrode 430 and the drain electrode 440 may be formed directly on the nano-structure 200 without the formation of the thin film layer 300. In this case, the nano-structure may be constructed with a certain density in order to act as a semiconducting layer.

(44) While the present invention has been described with reference to exemplary embodiments, it will be understood by those skilled in the art that many modifications and variations can be made without departing from the scope of the appended claims and the spirit of the present invention.

DESCRIPTION OF SYMBOLS

(45) 120: hexagonal boron nitride substrate 200: nano-structure 300: thin film layer