An optoelectronic device includes at least one light-emitting diode having a three-dimensional shape having a height along a longitudinal axis and having a first longitudinal dimension measured along the longitudinal axis and at least a second transverse dimension corresponding to a dimension of the three-dimensional shape measured perpendicular to the longitudinal axis. The first longitudinal dimension and the second transverse dimension are each less than or equal to substantially 20 m. The optoelectronic device has at least one optical lens capable of transforming the light rays emitted by the light-emitting diode which pass through the optical lens.

The process can include generating a first one of an electron gas and a hole gas at the first side of the p-n junction, and generating a second one of the electron gas and the hole gas at the second side of the p-n junction; discontinuing both the electron gas and the hole gas; generating the first one of the electron gas and the hole gas at the second side of the p-n junction; and discontinuing the first one of the electron gas and the hole gas at the second side of the p-n junction.

In an embodiment, an optoelectronic semiconductor component includes a semiconductor layer sequence with a doped first layer, a doped second layer, an active zone configured to generate radiation by electroluminescence between the first layer and the second layer, and a side surface extending transversely to the active zone and delimiting the semiconductor layer sequence in a lateral direction, two electrodes for electrical contact between the first and second layers and a cover layer located on the side surface in a region of the first layer, wherein the cover layer is in direct contact with the first layer, wherein a material of the cover layer alone and its direct contact with the first layer are configured to cause a formation of a depletion zone in the first layer, wherein the depletion zone comprises a lower concentration of majority charge carriers compared to a rest of the first layer, wherein the cover layer comprises a metal or a metal compound, and wherein the cover layer forms a Schottky contact with the first layer.

Integrated circuit chips may be optically interconnected using microLEDs. Some interconnections may be vertically-launched parallel optical links. Some interconnections may be planar-launched parallel optical links.

Disclosed is a method for producing a radiation-emitting semiconductor chip including the steps: providing a semiconductor layer sequence having an active region which is designed for generating electromagnetic radiation, producing a first recess in the semiconductor layer sequence, which fully penetrates the active region, producing a first structure in the first recess, whereinat least a lateral surface of the first structure facing the active region extends obliquely to at least a first lateral surface of the semiconductor layer sequence, andthe first structure is spaced apart in lateral directions from the active region. Also disclosed is a radiation-emitting semiconductor chip.

Disclosed is a semiconductor device comprising a thin film transistor and wirings connected to the thin film transistor, in which the thin film transistor has a channel formation region in an oxide semiconductor layer, and a copper metal is used for at least one of a gate electrode, a source electrode, a drain electrode, a gate wiring, a source wiring, and a drain wiring. The extremely low off current of the transistor with the oxide semiconductor layer contributes to reduction in power consumption of the semiconductor device. Additionally, the use of the copper metal allows the combination of the semiconductor device with a display element to provide a display device with high display quality and negligible defects, which results from the low electrical resistance of the wirings and electrodes formed with the copper metal.

Provided are a LED display unit group and a display panel. The LED display unit group includes a circuit board and pixel units. The circuit board includes N metal wiring layers stacked in sequence and an insulating plate disposed between adjacent metal wiring layers, and the N metal wiring layers are electrically connected through conductive vias on the insulating plate. The pixel units are arranged in an array of m rows and n columns and disposed on the circuit board. Each pixel unit includes at least two LED light-emitting chips with different emitted colors, each LED light-emitting chip is fixed on a first metal wiring layer. The first metal wiring layer includes m common A-electrode pads, A-electrode pads, and B-electrode pads. All the A-electrode pads corresponding to each row of pixel units are integrally formed with and electrically connected to one corresponding common A-electrode pad.

A light emitting element includes a core structure, which includes a first light emitting element core, a second light emitting element core spaced apart from the first light emitting element core, and a first bonding layer between the first light emitting element core and the second light emitting element core, each of the first light emitting element core and the second light emitting element core includes a first semiconductor layer, a second semiconductor layer spaced apart from the first semiconductor layer, and an element active layer between the first semiconductor layer and the second semiconductor layer, and a stacking direction of the first semiconductor layer, the element active layer, and the second semiconductor layer of the first light emitting element core is opposite to a stacking direction of the first semiconductor layer, the element active layer and the second semiconductor layer of the second light emitting element core.

A micro light-emitting device includes an epitaxial structure and a bridge connection structure. The epitaxial structure includes a first mesa surface and a second mesa surface which are located on the same side of the epitaxial structure with a height difference therebetween, which have the same widths in a first direction, and which respectively have center points in the first direction that are aligned in a second direction perpendicular to the first direction. The bridge connection structure includes a first bridge connection layer that is formed on the first and second mesa surfaces so as to be symmetrically disposed on at least one of the first and second mesa surfaces with a line of symmetry thereof being in the second direction and passing through the center points of the first and second mesa surfaces. A method for making the same, and a light-emitting apparatus including the same are also disclosed.

Various embodiments of solid state transducer (SST) devices are disclosed. In several embodiments, a light emitter device includes a metal-oxide-semiconductor (MOS) capacitor, an active region operably coupled to the MOS capacitor, and a bulk semiconductor material operably coupled to the active region. The active region can include at least one quantum well configured to store first charge carriers under a first bias. The bulk semiconductor material is arranged to provide second charge carriers to the active region under the second bias such that the active region emits UV light.