Provided is a solid vaporization/supply system of metal halide for thin film deposition that reduces particle contamination. The system includes a vaporizable source material container for storing and vaporizing a metal halide and buffer tank coupled with the vaporizable source material container. The vaporizable source material container includes a container main body with a container wall; a lid body; fastening members; and joint members, wherein the container wall is configured to have a double-wall structure composed of an inner wall member and outer wall member, which allows a carrier gas to be led into the container main body via its space. The container wall is fabricated of 99 to 99.9999% copper, 99 to 99.9996% aluminum, or 99 to 99.9996% titanium, and wherein the container main body, the lid body, the fastening members, and the joint members are treated by fluorocarbon polymer coating and/or by electrolytic polishing.

A solid material container for supplying solid materials housed inside by evaporating the solid materials, and includes a carrier gas introduction line, a first filling section that is filled with the solid material, a second filling section that is located in at least a part of an outer periphery of the first filling section, and is filled with the solid material, at least one tray-shaped third filling section that is disposed on the ceiling side of an interior of the solid material container, and a solid material lead-out line.

The present invention relates to a method of forming a coating layer of which a composition can be controlled, the method comprising steps of: preparing a substrate inside a chamber; evaporating a deposition material to generate YF.sub.3 or YOF particles in a gas phase by irradiating an electron beam on a YF.sub.3 deposition material provided in a solid form in an electron beam source; generating radical particles having activation energy by injecting a process gas containing oxygen into a RF energy beam source; irradiating an RF energy beam including oxygen radical particles toward the substrate; controlling a composition of a thin film by generating YOF deposition particles having a modified atomic ratio by adjusting an amount of fluorine substitution by oxygen as the YF.sub.3 or YOF particles and the oxygen radical particles react, and depositing the YOF deposition particles on the substrate with the RF energy beam.

A raw material supply apparatus according to an aspect of the present disclosure includes: a container configured to store a solution of a first solid raw material dissolved in a solvent or a dispersion system of the first solid raw material dispersed in a dispersion medium; a removal part configured to form a second solid raw material by removing the solvent or the dispersion medium from the solution or the dispersion system stored in the container; a detection part configured to detect a completion of a removal of the solvent or the dispersion medium from the solution or the dispersion system; and a heater configured to heat the second solid raw material.

A raw material supply apparatus according to an aspect of the present disclosure includes: a container configured to store a solution of a first solid raw material dissolved in a solvent or a dispersion system of the first solid raw material dispersed in a dispersion medium; a removal part configured to form a second solid raw material by removing the solvent or the dispersion medium from the solution or the dispersion system stored in the container; a detection part configured to detect a completion of a removal of the solvent or the dispersion medium from the solution or the dispersion system; and a heater configured to heat the second solid raw material.

The present invention relates to coating glass for architectural or automotive use, either monolithic or laminated, having solar control properties. The coating consists of several layers of different metal oxide semiconductors (TiO.sub.2, ZnO, ZrO.sub.2, SnO.sub.2, AlO.sub.x) and a layer of metallic nanoparticles, which when superimposed on a pre-established order give the glass solar control properties. In particular the use of protective layers of n-type semiconductors around the metallic nanoparticles layer. It also relates to the method for obtaining the coating by means of the aerosol-assisted chemical vapor deposition technique, using precursor solutions containing an organic or inorganic salt (acetates, acetylacetonates, halides, nitrates) of the applicable elements and an appropriate solvent (water, alcohol, acetone, acetylacetone, etc.). The synthesis is performed at a temperature between 100 and 600° C. depending on the material to be deposited. A nebulizer converts the precursor solution into an aerosol which is submitted with a gas to the substrate surface, where due to the temperature the thermal decomposition of the precursor occurs and the deposition of each layer of the coating occurs.

A film forming method for forming a film by heating a mist in a film-forming unit, the method including steps of: atomizing a raw-material solution in an atomizer to generate a mist; conveying the mist with a carrier gas from the atomizer to the film-forming unit through a conveyor that connects the atomizer and the film-forming unit; and heating the mist to form a film on a substrate in the film-forming unit. In this method, a flow rate of the carrier gas and a temperature of the carrier gas are controlled to satisfy 7<T+Q<67, where Q represents the flow rate (L/minute) of the carrier gas, and T represents the temperature (° C.) of the carrier gas. Thus, provided is a film forming method excellent in film forming speed.

A film forming method for forming a film by heating a mist in a film-forming unit, the method including steps of: atomizing a raw-material solution in an atomizer to generate a mist; conveying the mist with a carrier gas from the atomizer to the film-forming unit through a conveyor that connects the atomizer and the film-forming unit; and heating the mist to form a film on a substrate in the film-forming unit. In this method, a flow rate of the carrier gas and a temperature of the carrier gas are controlled to satisfy 7<T+Q<67, where Q represents the flow rate (L/minute) of the carrier gas, and T represents the temperature (° C.) of the carrier gas. Thus, provided is a film forming method excellent in film forming speed.

Described are methods, systems, and apparatus for processing a gas mixture that contains at least two gases by contacting the gas mixture with a membrane that allows for preferential flow of one of the gases through the membrane, to separate one constituent gas from the mixture.

An apparatus capable of controlling a liquid may provide a source vessel to contain the liquid and an inlet tube for flowing the liquid into the source vessel. The inlet tube may extend into the source vessel and may be arranged to direct the flowing liquid onto a sidewall of the source vessel.