A two-part moisture cure organosiloxane composition is disclosed. The two-part moisture cure organosiloxane composition comprises a base component and a catalyst package. The catalyst package undergoes minimal phase separation during storage.

The present invention provides a gel containing a water-absorbing crosslinked polymer, and a condensate of a reactive silicon compound having at least one selected from the group consisting of an acidic dissociative group, an acidic dissociative group in a salt form, and a derivative group of an acidic dissociative group.

The present invention provides a gel containing a water-absorbing crosslinked polymer, and a condensate of a reactive silicon compound having at least one selected from the group consisting of an acidic dissociative group, an acidic dissociative group in a salt form, and a derivative group of an acidic dissociative group.

The present invention relates to a composition comprising; components a) b) and d); wherein, component a) is a metal compound having the structure (I), component b) is a spin on high carbon polymer, having a polymer backbone comprising mono-cyclic aromatic hydrocarbon, fused-ring ring hydrocarbon moieties, or mixtures of these, having a wt. % of carbon from about 81 wt. % to about 94 wt. %, which is soluble to at least about 5 wt. % in a spin casting solvent, and wherein at least one, of said mono-cyclic aromatic hydrocarbon or said fused-ring ring hydrocarbon moieties, present in said spin on high carbon polymer, is functionalized with at least one alkynyloxy moiety of structure (VIII), and component d) is a spin casting solvent. The present invention further relates to using this composition in methods for manufacturing electronic devices through either the formation of a patterned films of high K material comprised of a metal oxide on a semiconductor substrate, or through the formation of patterned metal oxide comprised layer overlaying a semiconductor substrate which may be used to selectively etch the semiconductor substrate with a fluorine plasma. ##STR00001##

The present invention relates to a composition comprising; components a) b) and d); wherein, component a) is a metal compound having the structure (I), component b) is a spin on high carbon polymer, having a polymer backbone comprising mono-cyclic aromatic hydrocarbon, fused-ring ring hydrocarbon moieties, or mixtures of these, having a wt. % of carbon from about 81 wt. % to about 94 wt. %, which is soluble to at least about 5 wt. % in a spin casting solvent, and wherein at least one, of said mono-cyclic aromatic hydrocarbon or said fused-ring ring hydrocarbon moieties, present in said spin on high carbon polymer, is functionalized with at least one alkynyloxy moiety of structure (VIII), and component d) is a spin casting solvent. The present invention further relates to using this composition in methods for manufacturing electronic devices through either the formation of a patterned films of high K material comprised of a metal oxide on a semiconductor substrate, or through the formation of patterned metal oxide comprised layer overlaying a semiconductor substrate which may be used to selectively etch the semiconductor substrate with a fluorine plasma. ##STR00001##

The present invention relates to a composition comprising; components a) b) and d); wherein, component a) is a metal compound having the structure (I), component b) is a spin on high carbon polymer, having a polymer backbone comprising mono-cyclic aromatic hydrocarbon, fused-ring ring hydrocarbon moieties, or mixtures of these, having a wt. % of carbon from about 81 wt. % to about 94 wt. %, which is soluble to at least about 5 wt. % in a spin casting solvent, and wherein at least one, of said mono-cyclic aromatic hydrocarbon or said fused-ring ring hydrocarbon moieties, present in said spin on high carbon polymer, is functionalized with at least one alkynyloxy moiety of structure (VIII), and component d) is a spin casting solvent. The present invention further relates to using this composition in methods for manufacturing electronic devices through either the formation of a patterned films of high K material comprised of a metal oxide on a semiconductor substrate, or through the formation of patterned metal oxide comprised layer overlaying a semiconductor substrate which may be used to selectively etch the semiconductor substrate with a fluorine plasma. ##STR00001##

The adhesive composition includes: a cyclic organosilazane compound of the following general formula (1): ##STR00001##
wherein R.sup.1s each independently represent a substituted or unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms, and p represents an integer of 3 to 8; and a hydrolyzable group-containing organosilicon compound containing an alkoxysilane compound of the following general formula (2) and/or a partial hydrolytic condensate thereof:
R.sup.2.sub.x—Si(OR.sup.3).sub.4-x   (2)
wherein R.sup.2 represents an unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms and optionally having an oxygen atom, R.sup.3 represents an unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms, and x represents an integer of 0 to 2.

The adhesive composition includes: a cyclic organosilazane compound of the following general formula (1): ##STR00001##
wherein R.sup.1s each independently represent a substituted or unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms, and p represents an integer of 3 to 8; and a hydrolyzable group-containing organosilicon compound containing an alkoxysilane compound of the following general formula (2) and/or a partial hydrolytic condensate thereof:
R.sup.2.sub.x—Si(OR.sup.3).sub.4-x   (2)
wherein R.sup.2 represents an unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms and optionally having an oxygen atom, R.sup.3 represents an unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms, and x represents an integer of 0 to 2.

Provided are thermoplastic-nanoparticle compositions that exhibit enhanced powder and melt flow. The disclosed compositions, comprising nanoparticles being silylated, have particular application in additive manufacturing processes, such as selective laser sintering and other processes.

The present invention relates to a composition comprising; components a) b) and d); wherein, component a) is a metal compound having the structure (I), component b) is a spin on high carbon polymer, having a polymer backbone comprising mono-cyclic aromatic hydrocarbon, fused-ring ring hydrocarbon moieties, or mixtures of these, having a wt. % of carbon from about 81 wt. % to about 94 wt. %, which is soluble to at least about 5 wt. % in a spin casting solvent, and wherein at least one, of said mono-cyclic aromatic hydrocarbon or said fused-ring ring hydrocarbon moieties, present in said spin on high carbon polymer, is functionalized with at least one alkynyloxy moiety of structure (VIII), and component d) is a spin casting solvent. The present invention further relates to using this composition in methods for manufacturing electronic devices through either the formation of a patterned films of high K material comprised of a metal oxide on a semiconductor substrate, or through the formation of patterned metal oxide comprised layer overlaying a semiconductor substrate which may be used to selectively etch the semiconductor substrate with a fluorine plasma.

##STR00001##