An object is to coat a target position on a substrate with a dense film. In order to achieve the object, while a substrate on which a base containing a coating material is formed is transported, an auxiliary agent is applied to the substrate, and then a main agent containing a coating material is applied to the substrate to react the main agent with the auxiliary agent, so that a portion on the substrate where the base is formed is coated with the coating material.

A method for depositing divalent metal compounds on the surface of a nuclear power plant component, the component being a nickel-based or austenitic stainless steel alloy includes: providing within the component an aqueous treatment solution containing at least one soluble metal-containing compound such as a zinc salt and at least one source of oxygen; allowing the treatment solution to remain in the component until the compound is deposited on the wetted surface of the component; and, removing the aqueous solution after exposure. The treatment may be applied more than once, using more than one divalent metal compound, and the surface may further be exposed to a solution containing a noble metal species and a reducing agent. The treatment temperature is preferably below 100? C.

The invention relates to a depositing station comprising a basin arrangement (11) having a basin (13) forming a processing chamber (12) and serving to receive a solution of a metal, in particular nickel, zinc, palladium, gold or the like, dissolved in a liquid, for a, preferably electroless, deposition on an object receivable in the processing chamber, in particular on a terminal face of a wafer receivable in the processing chamber, the basin having at least one inlet (17) for introducing the solution into the basin, the basin having a perforation (18) which forms at least part of the inlet of the basin and which is configured to homogeneously introduce the solution into the processing chamber. Furthermore, the invention relates to a device for producing contact metallizations on terminal faces of wafers, comprising at least one depositing station.

The present disclosure relates to a metal-containing graphene hybrid composite, a preparing method of the metal-containing graphene hybrid composite, and a preparing method of a metal-containing graphene hybrid film.

A conductive nanowire film having a high aspect-ratio metal is described. The nanowire film is produced by inducing metal reduction in a concentrated surfactant solution containing metal precursor ions, a surfactant and a reducing agent. The metal nanostructures demonstrate utility in a great variety of applications.

A plating solution for electroless plating is disclosed, the solution including a metal salt, a reducing agent, a complexing agent, and a dispersion including polytetrafluoroethylene (PTFE) particulate matter and at least one particulate matter stabilizer, where said dispersion includes 400 parts per million or less of perfluorooctanoic acid (PFOA), and said dispersion is usable for an electroless plating bath to form a coating including PTFE particulate matter on an article.

A method for autocatalytic plating of nanoparticles on a carbon nanomaterial, the method including: providing a nanomaterial in a solution including an oxidizing agent, the solution being maintained within a first temperature range and stirring the solution for a first predetermined time period; heating the solution to reach a second temperature range, higher than the first temperature range, and stirring the solution for a second predetermined time period, shorter than the first time period, while maintaining the solution within the second temperature range; filtering and rinsing the nanomaterial; dispersing the nanomaterial in an aqueous solution including a sensitizing agent; immersing the nanomaterial in a mixture including seed particles adhering to the nanomaterial; collecting the nanomaterial; plating the nanomaterial by immersing in a plating solution including an aqueous metal source and a first aqueous reducing agent such that a metallic layer is grown on the nanomaterial from the seed particles.

A plating method can improve uniformity in a thickness of a plating layer formed on an inner surface of a recess. The plating method includes a loading process of loading the substrate in which the recess is formed into a casing; and a plating process of supplying a plating liquid to the substrate and forming a plating layer having a specific function on an inner surface of the recess. The plating process includes a first plating process of supplying a first plating liquid to the substrate and forming a first plating layer; and a second plating process of supplying a second plating liquid to the substrate and forming a second plating layer on the first plating layer after the first plating process. Further, a concentration of an additive contained in the first plating liquid is different from a concentration of an additive contained in the second plating liquid.

A plating method can improve adhesivity with an underlying layer. The plating method of performing a plating process on a substrate includes forming a first plating layer 23a serving as a barrier film on a substrate 2; baking the first plating layer 23a; forming a second plating layer 23b serving as a barrier film; and baking the second plating layer 23b. A plating layer stacked body 23 serving as a barrier film is formed of the first plating layer 23a and the second plating layer 23b.

A process for depositing a metal on a substrate involves the use of two reduction reactions in a bottom-up based tandem manner starting from a substrate surface and working upward. A first reduction reaction starts on the substrate surface at ambient temperature, and a second reduction reaction, which is initiated by the reaction heat of the first reduction reaction, occurs in a reactive ink solution film coated on top, which becomes solid after the reaction. Gas and other small molecules generated from the reduction reactions, and the solvent, can readily escape through the upper surface of the film before the solid metal layer is formed or during post-treatment, with no or few voids left in the metal film. Thus, the process can be used to form highly conductive films and features at ambient temperature on various substrates.