Patent classifications
C08F220/1809
Malienated derivatives
This invention relates to malienated derivatives made from maleic anhydride, functionalized monomers, and one or more additional reagents, e.g., an oxygen-containing reagent (e.g., alcohol, polyol), a nitrogen-containing reagent (e.g., amine, polyamine, aminoalcohol), a metal and/or a metal compound. The invention relates to lubricants, functional fluids, fuels, dispersants, detergents and functional compositions (e.g., cleaning solutions, food compositions, etc.)
Malienated derivatives
This invention relates to malienated derivatives made from maleic anhydride, functionalized monomers, and one or more additional reagents, e.g., an oxygen-containing reagent (e.g., alcohol, polyol), a nitrogen-containing reagent (e.g., amine, polyamine, aminoalcohol), a metal and/or a metal compound. The invention relates to lubricants, functional fluids, fuels, dispersants, detergents and functional compositions (e.g., cleaning solutions, food compositions, etc.)
POLYMER, RESIST COMPOSITION, AND PATTERN FORMING PROCESS
A polymer comprising recurring units having an acid generator bound to the backbone, and recurring units having an optionally acid labile group-substituted carboxyl group and/or recurring units having an optionally acid labile group-substituted hydroxyl group is obtained by polymerizing corresponding monomers under such illumination that the quantity of light of wavelength up to 400 nm is up to 0.05 mW/cm.sup.2. The polymer avoids photo-decomposition of the acid generator during polymerization and concomitant deprotection reaction of the acid labile group when used in positive resist compositions. A pattern with high dissolution contrast and rectangularity is formed after development.
Treatment liquid and pattern forming method
An object of the present invention is to provide a treatment liquid for patterning a resist film and a pattern forming method, each of which can accomplish suppression of generation of defects on a pattern and reduction in bridge defects of the pattern at the same time. The pattern forming method of an embodiment of the present invention is a pattern forming method by forming a resist film on a substrate using a resist composition including at least a resin whose polarity increases by the action of an acid, a photoacid generator, and a solvent, exposing the resist film, and then treating the exposed resist film with a treatment liquid to form a pattern, in which the treatment liquid includes two or more organic solvents, a boiling point of at least one organic solvent of the two or more organic solvents is 120° C. to 155° C., a content of the organic solvent having a boiling point of 120° C. to 155° C. is 45% by mass or more with respect to the total mass of the treatment liquid, and a difference between the boiling point of the organic solvent having the highest boiling point and the boiling point of the organic solvent having the lowest boiling point among the two or more organic solvents is less than 49° C.
Jettable Composition
A jettable composition is described, comprising a reactive monomer, oligomer or prepolymer containing at least one epoxy or oxetane functional group; a free radical polymerizable compound; a thermal cross-linking agent; and a radical initiator, along with an electronic device having the composition jetted thereon and a method of manufacturing an electronic device.
Jettable Composition
A jettable composition is described, comprising a reactive monomer, oligomer or prepolymer containing at least one epoxy or oxetane functional group; a free radical polymerizable compound; a thermal cross-linking agent; and a radical initiator, along with an electronic device having the composition jetted thereon and a method of manufacturing an electronic device.
RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST PATTERN-FORMING METHOD
A radiation-sensitive resin composition includes a polymer including a phenolic hydroxyl group, a compound represented by formula (1-1) or formula (1-2), and a compound represented by formula (2). In the formula (1-1), a sum of a, b, and c is no less than 1; at least one of R.sup.1, R.sup.2, and R.sup.3 represents a fluorine atom or the like; and R.sup.4 and R.sup.5 each independently represent a hydrogen atom, a fluorine atom, or the like. In the formula (1-2), in a case in which d is 1, R.sup.6 represents a fluorine atom or the like, and in a case in which d is no less than 2, at least one of the plurality of R.sup.6s represents a fluorine atom or the like; and R.sup.8 represents a single bond or a divalent organic group having 1 to 20 carbon atoms.
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Pattern forming material, composition for pattern formation, pattern forming method and method of manufacturing semiconductor device
According to one embodiment, a pattern forming material is disclosed. The pattern forming material contains a polymer. The polymer includes a specific first monomer unit. The monomer unit has a structure having ester of a carboxyl group at a terminal of a side chain. In the ester, a carbon atom bonded to an oxygen atom next to a carbonyl group is a primary carbon, a secondary carbon or a tertiary carbon. The pattern forming material is used for manufacturing a composite film as a mask pattern for processing a target film on a substrate. The composite film is formed by a process including, forming an organic film on the target film with the pattern forming material, patterning the organic film, and forming the composite film by infiltering a metal compound into the patterned organic film.
Pattern forming material, composition for pattern formation, pattern forming method and method of manufacturing semiconductor device
According to one embodiment, a pattern forming material is disclosed. The pattern forming material contains a polymer. The polymer includes a specific first monomer unit. The monomer unit has a structure having ester of a carboxyl group at a terminal of a side chain. In the ester, a carbon atom bonded to an oxygen atom next to a carbonyl group is a primary carbon, a secondary carbon or a tertiary carbon. The pattern forming material is used for manufacturing a composite film as a mask pattern for processing a target film on a substrate. The composite film is formed by a process including, forming an organic film on the target film with the pattern forming material, patterning the organic film, and forming the composite film by infiltering a metal compound into the patterned organic film.
LIGHT CURABLE (METH)ACRYLATE RESIN COMPOSITION FOR THERMOPLASTIC ELASTOMERS BONDING
The present invention provides a light curable (meth)acrylate resin composition for thermoplastic elastomer bonding. The light curable (meth)acrylate resin composition of the present invention comprises: a (meth)acrylic monomer, a polyolefin (meth)acrylate oligomer having a viscosity of 200 000 to 2 500 000 mPa*s at 25° C., and a photoinitiator. The present invention also provides a cured product of the light curable (meth)acrylate resin composition and a use of the composition.