The present invention provides an adaptive temperature slope calibration method of a thermal sensor, wherein the method includes the steps of: obtaining a parameter of the thermal sensor under a temperature environment; calibrating a temperature slope of the thermal sensor by using the parameter of the thermal sensor obtained under the temperature environment without using parameter(s) of the thermal sensor under other temperature environment(s); and storing the temperature slope of the thermal sensor for subsequent use of detecting temperature.

The present invention provides an adaptive temperature slope calibration method of a thermal sensor, wherein the method includes the steps of: obtaining a parameter of the thermal sensor under a temperature environment; calibrating a temperature slope of the thermal sensor by using the parameter of the thermal sensor obtained under the temperature environment without using parameter(s) of the thermal sensor under other temperature environment(s); and storing the temperature slope of the thermal sensor for subsequent use of detecting temperature.

A bandgap reference circuit includes a plurality of current sources including different temperature coefficients, a first trimmer, and a mixer, The first trimmer adjusts current amounts for a plurality of currents, which are individually output from each of the plurality of current sources, to be equal to each other. The mixer adjusts an aggregate ratio and combines the plurality of currents based on the aggregate ratio.

A bandgap reference circuit includes a plurality of current sources including different temperature coefficients, a first trimmer, and a mixer, The first trimmer adjusts current amounts for a plurality of currents, which are individually output from each of the plurality of current sources, to be equal to each other. The mixer adjusts an aggregate ratio and combines the plurality of currents based on the aggregate ratio.

The invention relates to an inverter (110) comprising: a power module (116.sub.1-3) having at least one semiconductor switch (Q, Q′), and a control device (120) configured to control the power module (116.sub.1-3) and to estimate an internal temperature (T.sub.J) of the at least one semiconductor switch (Q, Q′) by means of a temperature model (122) being a polynomial of order three or more having, as arguments, operating parameters including: a switching frequency (F.sub.SW), a temperature (T.sub.S) of the power module (116.sub.1-3), an AC current (I) outputted by the power module (116.sub.1-3), and the DC voltage (Udc).

The invention relates to an inverter (110) comprising: a power module (116.sub.1-3) having at least one semiconductor switch (Q, Q′), and a control device (120) configured to control the power module (116.sub.1-3) and to estimate an internal temperature (T.sub.J) of the at least one semiconductor switch (Q, Q′) by means of a temperature model (122) being a polynomial of order three or more having, as arguments, operating parameters including: a switching frequency (F.sub.SW), a temperature (T.sub.S) of the power module (116.sub.1-3), an AC current (I) outputted by the power module (116.sub.1-3), and the DC voltage (Udc).

A temperature sensor integrated in a transistor array, e.g., metal-oxide-semiconductor field-effect transistor (MOSFET) array, is provided. The integrated temperature sensor may include a doped well region formed in a substrate (e.g., SiC substrate), a resistor gate formed over the doped well region, first and second sensor terminals conductively coupled to the doped well region on opposite sides of the resistor gate. The integrated temperature sensor includes a gate driver to apply a voltage to the resistor gate that affects a resistance of the doped well region below the resistor gate, and temperature analysis circuitry to determine a resistance of a conductive path passing through the doped well region, and determine a temperature associated with the transistor array.

A temperature sensor integrated in a transistor array, e.g., metal-oxide-semiconductor field-effect transistor (MOSFET) array, is provided. The integrated temperature sensor may include a doped well region formed in a substrate (e.g., SiC substrate), a resistor gate formed over the doped well region, first and second sensor terminals conductively coupled to the doped well region on opposite sides of the resistor gate. The integrated temperature sensor includes a gate driver to apply a voltage to the resistor gate that affects a resistance of the doped well region below the resistor gate, and temperature analysis circuitry to determine a resistance of a conductive path passing through the doped well region, and determine a temperature associated with the transistor array.

A digital sensor network is overlaid on an integrated circuit for identifying and mapping hotspots in the integrated circuit. The digital sensor network may include a plurality of digital sensors distributed within an area of an integrated circuit component of an integrated circuit. Each of the plurality of digital sensors may include a ring oscillator and may be configured to output a counter value of a ring oscillator counted over a designated period. A sensor network control unit may be provided that is communicatively connected to the plurality of digital sensors via a communication circuit. The sensor network control unit may be configured to receive a plurality of counter values including the counter value from each of the plurality of digital sensors and identify a hotspot within the area of the integrated circuit.

Methods, apparatus, systems and articles of manufacture to trim temperature sensors are disclosed. An example method includes: sampling a first value indicative of a temperature of a first die of a multi-chip module (MCM) with a first temperature sensor, the first die including a first transistor having a channel including a first material; and calibrating a second temperature sensor configured to sample a second value indicative of a temperature of a second die including a second transistor have a second channel including a second material, the calibrating based on the first value.