Provided are structurally-reconfigurable, optical metasurfaces constructed by, for example, integrating a plasmonic lattice array in the gap between a pair of microbodies that serve to locally amplify the strain created on an elastomeric substrate by an external mechanical stimulus. The spatial arrangement and therefore the optical response of the plasmonic lattice array is reversible.

Provided are structurally-reconfigurable, optical metasurfaces constructed by, for example, integrating a plasmonic lattice array in the gap between a pair of microbodies that serve to locally amplify the strain created on an elastomeric substrate by an external mechanical stimulus. The spatial arrangement and therefore the optical response of the plasmonic lattice array is reversible.

The invention relates to a touch surface comprising: a carrier substrate (510, 610) comprising 2 opposite faces (511, 512) one (511) of the faces being exposed to touch; and comprising on the face (512) opposite the face (511) exposed to touch, a combined proximity and force sensor (300) comprising: an insulating substrate (210); —conductive tracks (221, 222) deposited on said substrate (210) and configured to produce a capacitive sensor; a force sensor (230) consisting of an assembly of conductive nanoparticles in colloidal suspension in an electrically insulating ligand; a protective layer (310) covering the conductive tracks and the nanoparticle assembly.

The invention also relates to a method for detecting and measuring the force applied by a touch against such a touch surface.

A piezoresistive force sensor which is designed in particular as a pressure sensor and can generate a sensor signal which is dependent on an amount of a force which acts on the force sensor in a force measuring direction. The force sensor has a first electrode, a second electrode and an elastically deformable resistance layer which electrically connects the two electrodes. A resistance value of a total resistance of an electrically conductive path between the first electrode to the second electrode via the resistance layer changes according to the amount of the acting force. By measuring a voltage between the electrodes or a current which flows along the electrically conductive path, for example, a sensor signal can be detected which describes the amount of the acting force. The resistance layer contains electrically conductive first staple fibers and electrically non-conductive second staple fibers. A proportion of the first staple fibers relative to the total quantity of staple fibers can be varied in order to adapt the force-resistance characteristic of the force sensor to the particular task.

A piezoresistive force sensor which is designed in particular as a pressure sensor and can generate a sensor signal which is dependent on an amount of a force which acts on the force sensor in a force measuring direction. The force sensor has a first electrode, a second electrode and an elastically deformable resistance layer which electrically connects the two electrodes. A resistance value of a total resistance of an electrically conductive path between the first electrode to the second electrode via the resistance layer changes according to the amount of the acting force. By measuring a voltage between the electrodes or a current which flows along the electrically conductive path, for example, a sensor signal can be detected which describes the amount of the acting force. The resistance layer contains electrically conductive first staple fibers and electrically non-conductive second staple fibers. A proportion of the first staple fibers relative to the total quantity of staple fibers can be varied in order to adapt the force-resistance characteristic of the force sensor to the particular task.

A device for detecting an object, with respect to a detection surface, including at least one measuring electrode, at least one emission electrode coupled to the measuring electrode by a piezoresistive layer, and measurement electronics, configured so as to bias the electrodes at the same alternating potential and perform a measurement, called capacitive measurement, of a first measured signal (Vs) relating to the capacitance (Coe), called object-electrode capacitance, seen by the at least one measuring electrode; apply a potential difference between the electrodes and measure a second signal relating to the resistance (Rie) between the electrodes. Also, a detection layer includes such a detection device as well as an item of equipment equipped with such a detection layer.

A device for detecting an object, with respect to a detection surface, including at least one measuring electrode, at least one emission electrode coupled to the measuring electrode by a piezoresistive layer, and measurement electronics, configured so as to bias the electrodes at the same alternating potential and perform a measurement, called capacitive measurement, of a first measured signal (Vs) relating to the capacitance (Coe), called object-electrode capacitance, seen by the at least one measuring electrode; apply a potential difference between the electrodes and measure a second signal relating to the resistance (Rie) between the electrodes. Also, a detection layer includes such a detection device as well as an item of equipment equipped with such a detection layer.

A stress and/or strain measurement cell for a stress and/or strain measurement system. The cell includes a reference contact, a sensor contact and a first current mirror circuit which is integrated into a semiconductor material and has a first conduction path connectable or connected to the reference contact and a second conduction path connectable or connected to the sensor contact. The first conduction path includes a first transistor and the second conduction path includes a second transistor. A first crystal direction of the semiconductor material oriented perpendicular to a first inversion channel of the first transistor is definable for the first inversion channel and a second crystal direction of the semiconductor material oriented perpendicular to a second inversion channel of the second transistor is definable for the second inversion channel. The first crystal direction of the semiconductor material is inclined relative to the second crystal direction of the semiconductor material.

A stress and/or strain measurement cell for a stress and/or strain measurement system. The cell includes a reference contact, a sensor contact and a first current mirror circuit which is integrated into a semiconductor material and has a first conduction path connectable or connected to the reference contact and a second conduction path connectable or connected to the sensor contact. The first conduction path includes a first transistor and the second conduction path includes a second transistor. A first crystal direction of the semiconductor material oriented perpendicular to a first inversion channel of the first transistor is definable for the first inversion channel and a second crystal direction of the semiconductor material oriented perpendicular to a second inversion channel of the second transistor is definable for the second inversion channel. The first crystal direction of the semiconductor material is inclined relative to the second crystal direction of the semiconductor material.

A force detector includes a low load cell, a high load cell, a first presser and a second presser. The first presser and the second presser have pressing surfaces having different areas from each other. When the same force acts on the first presser and the second presser, the low load cell and the high load cell are configured so that their outputs indicate different values from each other.