A strain detector includes a strain-causing portion, an insulation film formed on the strain-causing portion, a strain gauge formed on the insulation film and configured to detect the strain generated by the strain-causing portion as electric signals, an electrode connected to the strain gauge, a bonding pad extending from the electrode, a bonding wire connected to the bonding pad, and an insulative resin layer covering the strain gauge without covering the bonding pad and the bonding wire.

Pressure transducer for determining a pressure variable, comprising at least a pressure sensor with a measuring membrane and resistance elements integrated in the measuring membrane, wherein the pressure sensor is arranged between a first and a second counter body, such that a pressure chamber forms between the measuring membrane and the first counter body, which pressure chamber can be subjected to a first pressure; wherein the side of the measuring membrane facing towards the second counter body can be subjected to a second pressure, and a displacement of the measuring membrane dependent upon the first and second pressures set; wherein the pressure-dependent displacement of the measuring membrane can be detected by the resistance elements and, via a bridge voltage of a bridge circuit formed with the resistance elements, a pressure variable can be determined; wherein the measuring membrane has a membrane electrode and the second counter body has at least one counter body electrode on the side facing towards the measuring membrane, such that the membrane electrode and the counter body electrode form a capacitance, wherein, on the basis of the capacitance, at least one additional piece of information can be determined and/or at least one additional function of the pressure transducer can be performed.

Disclosed is a pressure detecting device having a temperature sensor, the device including: a housing having a first chamber, a second chamber, and a port part having a fluid guide tube that guides a pressure transmitting fluid to the second chamber; a lead frame coupled to the housing and configured for being connected to an external device; a circuit substrate electrically connected to the lead frame and including a first surface and a second surface; a pressure detecting element provided on the second surface of the circuit substrate and generating an electrical signal according to a pressure change; a tube coupled to the port part, whereby a first end of the tube is open and provided inside the first chamber; and a temperature detecting element provided inside the tube and transmitting an electrical signal generated according to a temperature change to the circuit substrate.

A semiconductor pressure sensor device in which the shape or the structure of a connector portion can be easily changed and which has high waterproof performance. A terminal housing and a second case are engaged with each other via an engagement structure. The terminal housing and a first case are fitted with each other via a fitting structure. Thus, the first case and the second case are fixed to each other via the terminal housing. The first case is fitted in the second case. Then, the terminal housing is fitted with the first case, and the terminal housing is engaged with the second case substantially at the same time. Through such simple process, an opening portion of the first case is covered and a connector portion configured to enable external terminals to be connected to ends, located on one side, of a plurality of lead terminals is formed.

Disclosed is a sensor to measure a pressure in a fluid, of which a body 1 includes a membrane 2 and a wall 3 forming a peripheral support for and around the membrane. The membrane and the peripheral wall are formed from one single component, and the membrane and the peripheral wall together form a flat and smooth front surface 4 intended to be in contact with the fluid.

Intelligent temperature and pressure gauge assemblies (52) for use with vessels (24) having pressurized hazard suppression materials therein include temperature and pressure sensors (136, 138) coupled with a digital processor (72) with associated memory for storing empirical temperature and pressure data. The data includes normalized linear temperature-pressure curves consistent with static or slowly changing temperature conditions experienced by the vessels (24), as well as nonlinear temperature-pressure curves consistent with rapidly changing temperature conditions. In use, the assemblies (52) repeatedly sense the temperature and pressure conditions of the hazard suppression material and compare these sensed values with the stored values, and generate an output in conformance with the comparison. In this fashion, the assemblies (52) compensate for rapidly changing temperatures without generating false failure signals.

An interface pressure sensor includes a fluid pressure sensor disposed in a volume defined by a shear wall. The volume is enclosed, and the fluid pressure sensor is encapsulated by, an infill material. The infill material defines a sensing surface that, when pressed, can impart a force that is detectable by the fluid pressure sensor.

A method of manufacturing a pressure sensor is shown, wherein the pressure sensor comprises a port element with a sealing structure and a membrane. Four strain gages will be attached to the membrane. The gages are used in a Wheatstone bridge to sense the fluid pressure. A first finite element action determines a first contour around the membrane central axis with equal compressive strain and a second contour around the membrane central axis with equal tensile strain wherein when fluid pressure is applied to the membrane strain on the first contour is opposite strain on the second contour. A second finite element action determines the four positions of the strain gages on the first and second contour such that the difference between the highest error signal and the lowest error signal at the output of the Wheatstone bridge is minimal under influence of parasitic forces.

A manufacturing method of a semiconductor device, in which a vacuum-pressure airtight chamber is defined by a space between a first substrate and a recessed portion of a second substrate, includes preparing the first substrate and the second substrate both of which contain silicon, joining the two substrates together, performing a heat treatment to emit hydrogen gas from the airtight chamber, and generating OH groups on the substrates before the joining. In the joining of the substrates together, the OH groups are bonded together to generate covalent bonds, and in the heat treatment, a part on which the OH groups are generated is heated at a temperature rise rate of 1° C./sec or smaller until a temperature of the substrate increases to 700° C. or higher, and a heating temperature and heating time are adjusted to emit hydrogen gas from the airtight chamber.

An electric device for detecting pressure and a pressure sensor includes an electric current channel arranged to conduct an electric current, wherein the electric current channel is disposed adjacent or proximate to a pressure sensitive structure. Upon the pressure sensitive structure being subjected to a change of an external pressure, the pressure sensitive structure is arranged to manipulate a first electrical characteristic of the electric current channel.