An electrical connecting device having one or more contact members to be in contact with a contact target is provided. The electrical connecting device includes a main body having one or more recesses on a surface thereof opposed to the contact target, and a flexible portion that covers the recesses to form sealed spaces. The main body includes a gas exhaust passage and an air supply passage provided for each of the sealed spaces to adjust a pressure in each of the sealed spaces, and the contact members are respectively disposed to be opposed to the recesses with the flexible portion interposed therebetween.

Anomaly detection and remedial recommendation techniques for improving the quality and yield of microelectronic products are provided. In one aspect, a method for quality and yield improvement via anomaly detection includes: collecting time series sensor data during individual steps of a semiconductor manufacturing process; calculating anomaly scores for each of the individual steps using a predictive model; and implementing changes to the semiconductor manufacturing process based on the anomaly scores. A system for quality and yield improvement via anomaly detection is also provided.

A semiconductor test apparatus includes: a power supply; a high-voltage wire connecting high-voltage terminals of a plurality of semiconductor devices which are objects to be tested to a high-voltage side of the power supply; a low-voltage wire connecting low-voltage terminals of the semiconductor devices to a low-voltage side of the power supply; first switches connected in series to the semiconductor devices respectively, each of the first switches having one end connected to the low-voltage side of the power supply via the low-voltage wire and other end connected to the low-voltage terminal; second switches connected to the semiconductor devices respectively, each of the second switches having one end connected to the high-voltage terminal and other end connected to the low-voltage terminal; and a control circuit controlling the first switches and the second switches.

A semiconductor test apparatus includes a chuck top on which a semiconductor wafer is mounted, and contact probes that contact measurement points of semiconductor chips formed on the semiconductor wafer, the chuck top includes a conductor that contacts a lower surface of the semiconductor wafer, a mounting table arranged below the conductor, and a first vacuum tube and a second vacuum tube connected to the mounting table, the conductor has a plurality of suction holes that are arranged in a spiral form in top view, in the mounting table, a flow pass communicating with the plurality of suction holes and having a spiral form in top view, the first vacuum tube is connected to an inner circumference portion of the flow pass, and the second vacuum tube is connected to an outer circumference portion of the flow pass.

A low-profile passive slide screw load pull tuner is used on-wafer, especially in millimeter-wave frequencies from 25 to 110 GHz and above. It uses special rotating tuning probes insertable in a short slabline mounted inside the tuner housing, which holds the control gear. The tuner is mounted at an angle matching the angle of the wafer-probe, is connected directly of the wafer-probe and ensures optimum reflection factor tuning range.

Back-surface roughness of a back surface of a silicon carbide semiconductor device having a MOS gate structure in a first region that is a region within 30 μm of a cross section (lateral surface) of the device is at most 4 μm while the back-surface roughness in a second region other than the first region is at most 2 μm, the back surface of the silicon carbide semiconductor device is the back surface of the second electrode. In a method of manufacture, the back-surface roughness of the device is specified to meet a predetermined condition. Then, ON voltages of the device before and after a forward current is passed through body diodes of the device are measured, and a rate of change of the ON voltage while the forward current is passed through body diodes is calculated, and then the device having a calculated rate of change less than 3% is identified.

A silicon carbide semiconductor device being capable of operating at least 100 degree C., includes a semiconductor substrate having an active region, the semiconductor substrate having first and second surfaces opposite to each other, a first semiconductor region of an n type, provided in the semiconductor substrate, a second semiconductor region of a p type, provided in the active region, between the first surface of the semiconductor substrate and the first semiconductor region, and a device element structure including a pn junction between the second and first semiconductor regions that forms a body diode through which a current flows when the semiconductor device is turned on. A stacking fault area that is a sum of areas that contain stacking faults within an entire active region of the first surface of the semiconductor substrate in the first surface is set to be greater, the higher a breakdown voltage is set.

Various approaches can be used to interrogate a surface such as a surface of a layered semiconductor structure on a semiconductor wafer. Certain approaches employ Second Harmonic Generation and in some cases may utilize pump and probe radiation. Other approaches involve determining current flow from a sample illuminated with radiation. Decay constants can be measured to provide information regarding the sample. Additionally, electric and/or magnetic field biases can be applied to the sample to provide additional information.

A test and measurement system includes a power device having an interface to allow connection to one or more devices under test (DUTs), and one or more processors configured to execute code that, when executed, causes the one or more processors to receive a selection between static and dynamic characterization, and to configure the power device to perform the selected one of static or dynamic characterization of the one or more DUTs, a measurement device, having a user interface, one or more processors configured to execute code that, when executed, causes the one or more processors to: receive user inputs through the user interface, the user inputs including at least the selection between static and dynamic characterization, and send the selected one of static or dynamic characterization to the power device, and a connector to connect the power device to the measurement device. A method of operating a combined static and dynamic device characterization platform includes receiving, through a user interface on a measurement device, a user input selecting between static and dynamic characterization of one or more devices under test (DUTs), sending the user input through a connection between the measurement device and a power device, receiving the user input at a power device, controlling signals to the one or more DUTs in the power device to perform one of static or dynamic characterization of the one or more DUTs, and sending output data resulting from the characterization to the measurement device.

A system and method for rotary motion with vacuum sealing is provided. The system includes a vacuum chamber, a component mount disposed in the vacuum chamber, and a base. A bellows is disposed between the base and the component mount, and the bellows provides a seal between the base and the component mount. The bellows, the base, and the component mount define an actuator compartment therebetween. An actuator is disposed in the actuator compartment. The actuator is configured to rotate the component mount relative to the base in order to align a component disposed on the component mount. Rotation of the component mount relative to the base causes torsional elastic deformation of the bellows.