A memory device includes a charge pump connected to a power supply voltage and including a plurality of stages to output an output voltage, a stage counter configured to output a count value that incrementally increases to a number of the stages, and a regulator configured to compare the output voltage with a reference output voltage of the charge pump that is generated using the incrementally increasing count value obtained by the stage counter, and to output a pump operation signal at a time when the reference output voltage becomes greater than or equal to the output voltage, wherein the charge pump operates in response to the pump operation signal.

To provide a semiconductor device which can be stably operated while achieving a reduction of the power consumption. A semiconductor device includes a CPU, a system controller which designates an operation speed of the CPU, P-type SOTB transistors, and N-type SOTB transistors. The semiconductor device is provided with an SRAM which is connected to the CPU, and a substrate bias circuit which is connected to the system controller and is capable of supplying substrate bias voltages to the P-type SOTB transistors and the N-type SOTB transistors. Here, when the system controller designates a low speed mode to operate the CPU at a low speed, the substrate bias circuit supplies the substrate bias voltages to the P-type SOTB transistors and the N-type SOTB transistors.

Apparatus and methods are disclosed for providing a bias, comprising a bias generator circuit including a high voltage (HV) circuit configured to generate a regulated high voltage (HV) from an HV line and provide the regulated HV at an HV regulated line and a low voltage (LV) circuit configured to generate a low voltage (LV) differential from the HV line and to provide the LV differential at an LV line.

A method for an improved characterization of standard cells in a circuit design process is disclosed. Adaptive body biasing is considered during the design process by using simulation results of a cell set, a data-set for performance of the cell set, and a data-set for a hardware performance for a slow, typical and fast circuit property. Static deviations in a supply voltage are considered by determining a reference performance of a cell and a reference hardware performance monitor value at a PVT corner. A virtual regulation and adapting of body bias voltages of the cell set is performed such that the reference performance of the cell or the reference hardware performance monitor value will be reached at each PVT corner and for compensating the static deviation in the supply voltage. The results are provided in a library file.

A method for regulating the memory includes operations as follows. A mapping relationship among temperatures of a transistor, body bias voltages of the transistor, and data writing time of the memory is acquired, a current temperature of the transistor is acquired, the body bias voltage is regulated based on the current temperature and the mapping relationship, to enable the data writing time corresponding to the regulated body bias voltage to be within a preset writing time.

The present disclosure provides a method for programming charge trap flash memory, including: enabling a channel of a charge trap storage component, to form a transverse electric field between a source and a drain, to generate primary electrons flowing from the source to the drain; colliding, by the primary electrons after a preset time, with the drain to generate electron holes; applying voltages to the drain and a substrate, where the electron holes are accelerated downward by the action of the electric field to collide with the substrate, to generate secondary electrons; and applying voltages to a gate and the substrate, to form a vertical electric field, wherein the secondary electrons generate tertiary electrons under the action of the vertical electric field and the tertiary electrons are injected into an insulating storage medium layer of the charge trap storage component, to complete a programming operation.

A microelectronic circuit structure comprises a stack of bonded layers comprising a bottom layer and at least one upper layer. At least one of the upper layers comprises an oxide layer having a back surface and a front surface closer to the bottom layer than the back surface, and a plurality of FD-SOI transistors built on the from surface. At least a first back gate line and a second back gate line extend separate from each other above the back surface for independently providing a first back gate bias to a first group of transistors and a second back gate bias to a second different group of transistors.

A method and an apparatus for reducing an effect of local process variations of a digital circuit on a hardware performance monitor includes measuring a set of performance values (c.sub.1, c.sub.2 . . . c.sub.n) of the digital circuit by n identical hardware performance monitors, where n is a natural number greater than 1, determining an average value c.sub.mean of the measured performance values (c.sub.1, c.sub.2 . . . c.sub.n), as an approximation of an ideal performance value c.sub.0, selecting one performance value c.sub.j of the set of performance values (c.sub.1, c.sub.2 . . . c.sub.n) by a controller, comparing the performance value c.sub.j with a reference value c.sub.ref by a controller the controller, resulting in a deviation value Δc, and controlling an actuator by using the deviation Δc for regulating the local global process variations to the approximation c.sub.mean of the ideal performance value c.sub.0.

A bias generation circuit and a memory circuit are provided. The bias generation circuit includes: a first load circuit coupled between a working voltage and an regulating node; a bias circuit configured to receive the working voltage and output a bias voltage according to the working voltage; a voltage stabilizing circuit coupled to an output end of the bias circuit and configured to receive a reference voltage and regulate a voltage of the regulating node according to the bias voltage and the reference voltage; and a second load circuit having one end coupled to the output end of the bias circuit and the other end coupled to the regulating node.

The present disclosure is drawn to, among other things, a method for accessing memory using dual standby modes, the method including receiving a first standby mode indication selecting a first standby mode from a first standby mode or a second standby mode, configuring a read bias system to provide a read bias voltage and a write bias system to provide approximately no voltage, or any voltage outside the necessary range for write operation, based on the first standby mode, receiving a second standby mode indication selecting the second standby mode, and configuring the read bias system to provide at least the read bias voltage and the write bias system to provide a write bias voltage based on the second standby mode, the read bias voltage being lower than the write bias voltage.