Provided is a complementary sensors-integrated interface circuit and a differential circuit using the same. The complementary sensors-integrated interface circuit includes: a first sensor having a sensing characteristic for a detection target material; and a second sensor having a sensing characteristic complementary to that of the first sensor for the detection target material, wherein the first sensor is composed of an FET-type sensor, the second sensor is composed of an FET-type sensor or a resistor-type sensor, and the first sensor and the second sensor are connected in series. The interface circuit having the above-described configuration increases the change in output voltage, thereby improving the sensing sensitivity. The complementary sensors-integrated interface circuit is characterized in that it serves as an amplification circuit. In addition, a complementary sensors-integrated differential interface circuit uses the aforementioned complementary sensors-integrated interface circuit, thereby serving as a differential amplifier circuit, reducing noise and improving sensitivity.

A bioelectronic sensor is disclosed for detecting presence of at least one volatile organic compound (VOC), the sensor comprising a single carbon nanotube (CNT) covalently immobilizing a single receptor optionally being a mammalian or an insect receptor, wherein association of the VOC to said receptor allows for a measurable electric field effect.

A system and method for ascertaining the concentration of a preselected target substance, characterized by a mitigated tendency for yielding results distorted by a departure from a state of calibration, i.e., by “drift”, which drift is ordinarily caused by temperature and humidity variations; drift-mitigation is achieved by exposure of a target substance to a metal oxide semiconductor material, the temperature of a heating element operatively associated with said material being cycled between a low-temperature interval and a high-temperature interval, in which latter interval the material's temperature is raised to a level at or above the minimum temperature for rapid formation of one or more oxides of the target substance, the oxide formation taking place in a sufficiently short time that the conductivity is reflective of a transient signal amplitude in a brief interval of time, such that the external factors causing drift do not have sufficient opportunity to distort the concentration determination.

Embodiments herein relate to systems and methods for utilizing hysteresis as a mechanism of analysis of a sample. A system for analyzing a fluid sample is included having a controller circuit and a chemical sensor element. The chemical sensor element can include one or more discrete binding detectors that can include one or more graphene varactors. The system can include measurement circuitry having an electrical voltage generator configured to generate an applied voltage at a plurality of voltage values to be applied to the one or more graphene varactors. The system can include a measurement circuit having a capacitance sensor configured to measure capacitance of the discrete binding detectors resulting from the applied voltage. The system for analyzing the fluid sample can be configured to measure hysteresis effects related to capacitance versus voltage values obtained from the one or more graphene varactors. Other embodiments are also included herein.

The invention relates to heterostructures including a layer of a two-dimensional material placed on a multiferroic layer. An ordered array of differing polarization domains in the multiferroic layer produces corresponding domains having differing properties in the two-dimensional material. When the multiferroic layer is ferroelectric, the ferroelectric polarization domains in the layer produce local electric fields that penetrate the two-dimensional material. The local electric fields modulate the charge carriers and carrier density on a nanometer length scale, resulting in the formation of lateral p-n or p-i-n junctions, and variations thereof appropriate for device functions. Methods for producing the heterostructures are provided. Devices incorporating the heterostructures are also provided.

Sensors and methods for detecting combustible gases in a gas mixture are disclosed based on combustion catalyst compositions comprising an amount of a precious metal supported on an ion-exchangeable alkali metal titanate substrate. The sensors and methods are particularly useful for measuring the concentration of combustible gases in low temperature and high humidity conditions. Advantageously, certain embodiments can selectively measure the concentration of select species (e.g. ethylene).

A device for performing electrolysis of water is disclosed. The device may include a semiconductor structure with a surface and an electron guiding layer below said surface, the electron guiding layer of the semiconductor structure being configured to guide electron movement in a plane parallel to the surface. The electron guiding layer of the semiconductor structure may include an InGaN quantum well or a heterojunction, the heterojunction being a junction between AlN material and GaN material or between AlGaN material and GaN material and at least one metal cathode arranged on the surface of the semiconductor structure. The device may further include at least one photoanode arranged on the surface of the semiconductor structure, wherein the at least one photoanode may include a plurality of quantum dots of In.sub.xGa.sub.(1-x)N material, wherein 0.4≤x≤1. A system including such a device is also disclosed.

An NO.sub.2 detection device includes a substrate; a drain formed on the substrate; a source formed on the substrate; a p-type polymer semiconductor layer formed on the substrate, between the drain and the source; and an n-type metal-organic framework layer located over the p-type polymer semiconductor layer. The n-type metal-organic framework layer has apertures having a size larger than a size of the NO.sub.2 molecules so that the NO.sub.2 molecules pass through the n-type metal-organic framework layer to arrive at the p-type polymer semiconductor layer to increase an electrical current.

Aspects of the present disclosure generally relate to functionalized metals, to processes for producing functionalized metals, and to uses of functionalized metals as, e.g., sensing materials for chemiresistive sensors. In an aspect, a process for producing a functionalized metal is provided. The process includes introducing, under first conditions, a first precursor comprising a Group 10 to Group 14 metal with an amine to form a second precursor comprising the Group 10 to Group 14 metal. The process further includes introducing, under second conditions, the second precursor with a third precursor to form the functionalized metal, the third precursor comprising an organic material having the formula HS—R—COOH, wherein R is an unsubstituted hydrocarbyl, a substituted hydrocarbyl, an unsubstituted alkoxy, or a substituted alkoxy.

A method for producing a nanoscale channel structure disclosed. The method includes depositing and structuring a first sacrificial layer on a substrate, depositing a second sacrificial layer on the substrate and on the first sacrificial layer, depositing an etching masking layer on the second sacrificial layer, partly removing the etching masking layer and the second sacrificial layer, removing the first sacrificial layer and additionally partly removing the second sacrificial layer, depositing a wall layer on the etching masking layer and on the substrate, structuring access openings to the second sacrificial layer, and removing the remaining second sacrificial layer.