A method of sensing a target gas in an environment in which a response of a semiconducting gas sensor device upon exposure to the environment is measured. The semiconducting gas sensor device includes first and second electrodes in electrical contact with a doped organic semiconductor layer and is, e.g., an organic thin film transistor or organic chemiresistor. The measured response may be indicative of a cumulative amount of a target gas that the semiconducting gas sensor device has been exposed to. A gas sensor module containing the semiconducting gas sensor device may be connectable to a reader configured to read the semiconducting gas sensor device after exposure to the environment. The connection may be wired or wireless. The target gas may be 1-methylcyclopropene.

A monolithic, three-dimensional (3D) integrated circuit (IC) device includes a sensing layer, a memory layer, and a processing layer. The sensing layer includes a plurality of carbon nanotube field-effect transistors (CNFETs) that are functionalized with at least 50 functional materials to generate data in response to exposure to a gas. The memory layer stores the data generated by the plurality of CNFETs, and the processing layer identifies one or more components of the gas based on the data generated by the plurality of CNFETs.

The invention achieves a lower noise of a sense signal of a FET-type hydrogen sensor. For solving the above problem, one aspect of a sensor system of the invention includes a reference device and a sensor device configured using FETs on a substrate, and further, well potentials of the reference device and the sensor device are electrically isolated from each other.

A gas sensor includes a p-type semiconductor layer that contains copper or silver cations and contacts with detection target gas, a first electrode that is a Schottky electrode to the p-type semiconductor layer, a high-resistance layer that is provided between the p-type semiconductor layer and the first electrode such that the p-type semiconductor layer and the first electrode partly contact with each other and has resistance higher than that of each of the p-type semiconductor layer and the first electrode, and a second electrode that is an ohmic electrode to the p-type semiconductor layer.

A molecular detection apparatus according to an embodiment includes: a distributor which ionizes a target containing substances to be detected, applies voltage to ionized substances, and extracts the substances to be detected according to a time-of-flight based on the speed; a detector which detects the substance to be detected dropped from the distributor; and a discriminator which discriminates the substance to be detected. The detector includes: a plurality of detection units including field effect transistors using graphene layers; and a plurality of organic probes which are provided on the graphene layers, and at least some of which have different bond strengths with the substances to be detected. The substance to be detected is discriminated depending on a signal pattern based on intensity differences of the detection signals generated by differences in the bond strengths between the organic probes and the substances to be detected.

Provided is an FET-type sensor array. In the FET-type sensor array, a plurality of FET-type sensors are arranged at arbitrary distances from one reference point, and the same areas of the FET-type sensors are arranged to face the reference point. The FET-type sensors includes a control electrode, a floating electrode, a sensing material layer arranged between the control electrode and the floating electrode, and source and drain regions formed on both sides of a lower portion of the floating electrode. In the FET-type sensor array, through miniaturisation of FET-type sensors constituting the sensor array and new design of air layers in the peripheries of micro-heaters built in the sensors and sensing material layers, power consumption of the micro-heaters can be reduced. In addition, the sensors can be efficiently arranged to reduce the area occupied by the sensor array, and the sensing material can also be heated by the adjacent micro-heaters, so that the total power consumption can also be reduced.

A semiconductor sensor includes an insulating substrate, a semiconductor sheet on the insulating substrate and including graphene or carbon nanotubes, a source electrode and a drain electrode, each being provided on the insulating substrate and electrically coupled to the semiconductor sheet, an oxide film extending over a surface of the semiconductor sheet and including silica, alumina, or a composite oxide of silica and alumina, and a receptor at a surface of the oxide film.

A gas sensor device includes gas sensors and switches. The switches are connected to the respective gas sensors in series. The gas sensors each include: a first conductive layer; a second conductive layer; a metal oxide layer disposed between the first conductive layer and the second conductive layer; and an insulation layer covering the first conductive layer, the second conductive layer, and the metal oxide layer and having an opening from which a portion of the second conductive layer is exposed. The resistance of the gas sensor is decreased when a gas containing a hydrogen atom comes into contact with the second conductive layer.

A gas sensor includes a p-type semiconductor layer that contains a compound of copper or silver and contacts with detection target gas, a first electrode that is a Schottky electrode to the p-type semiconductor layer, a high-resistance layer that is provided between the p-type semiconductor layer and the first electrode and has resistance higher than that of each of the p-type semiconductor layer and the first electrode, and a second electrode that is an ohmic electrode to the p-type semiconductor layer.

An illustrative humidity sensor may include a substrate having a source and a drain, wherein the drain is laterally spaced from the source. A gate stack is provided in the space between the source and the drain to form a transistor. The gate stack may include a gate insulator situated on the substrate to form a gate insulator/substrate interface. The gate stack may further include a barrier layer above the gate insulator. The barrier layer may be configured to act as a barrier to mobile charge, humidity and/or other contaminates, and may help prevent such contaminates from reaching the gate insulator/substrate interface. The gate stack may further include a humidity sensing layer above the barrier layer. The humidity sensing layer, when exposed to humidity, may modulate the conduction channel in the substrate under the gate insulator and between the source and the drain. In some cases, the humidity level may be determined by monitoring the current flowing between the source and drain.