A gas concentration device includes a first container, a second container, a pressure control device, and a path. The first container includes a first space surrounded by a first partition wall and stores a specimen, and a pressure inside the first space is reduced. The second container is airtightly connected to the first container by a first path and has a second space surrounded by a second partition wall and stores a gas flowing in from the first space. The pressure control device reduces a volume of the second space. A gas inside the second space is discharged through a second path.

Embodiments of the invention include a method for fabricating a semiconductor device and the resulting structure. A substrate is provided. A plurality of metal portions are formed on the substrate, wherein the plurality of metal portions are arranged such that areas of the substrate remain exposed. A thin film layer is deposited on the plurality of metal portions and the exposed areas of the substrate. A dielectric layer is deposited, wherein the dielectric layer is in contact with portions of the thin film layer on the plurality of metal portions, and wherein the dielectric layer is not in contact with portions of the thin film layer on the exposed areas of the substrate such that one or more enclosed spaces are present between the thin film layer on the exposed areas of the substrate and the dielectric layer.

Chemical sensors include a functionalized electrode configured to change surface potential in the presence of an analyte. A piezoelectric element is connected to the functionalized electrode. A piezoresistive element is in contact with the piezoelectric element.

A method of assembling a remote sensor system to detect a gas or chemical and a remote sensor system are described. The method includes fabricating a sensor, the sensor outputting a sensor signal that changes upon contact of the sensor with the gas or chemical and the sensor having an input port for a clock signal, coupling a capacitor to the sensor, the capacitor output voltage resulting from the sensor signal output by the sensor, and coupling a mixer to the capacitor and a low frequency oscillator, the mixer configured to mix the capacitor output voltage with the low frequency oscillator output to generate an output signal. The method also includes coupling an antenna to the mixer, the antenna configured to transmit the output signal indicating detection of the gas or chemical.

A gas-measuring chip (10), used with a gas-measuring device (100) of a portable chip measurement system, has a carrier (11) and measuring channels (20, 20′, 20″). A regenerable, nonconsumable sensor (30, 30′, 30″) is arranged in each measuring channel. A method includes inserting the gas-measuring chip (10) into the gas-measuring device (100) and connecting one measuring channel of the gas-measuring chip (10) to a pumping system (120, 121) of the gas-measuring device (100). A measurement is carried out with a first measuring channel (20, 20′, 20′) with a switching over to a measuring channel different from the first measuring channel. The sensors (30, 30′, 30″) of the measuring channel used last is regenerated and optionally simultaneously there is a measurement with the measuring channel switched over to. There is a switching over to a measuring channel, which is different from the measuring channel last used for the measurement.

A method for testing a gas sensor and a gas-measuring device with a testing device for testing the gas sensor provides an improved analysis and evaluation of states of gas sensors. Due to a testing of a gas admission element, by monitoring measuring signals (35, (38) in a time course (400) in conjunction with dispensing (91, 91′, 91″) a quantity of test substance, it is made possible to check whether a gas supply to the gas sensor is possible (to check if the gas diffusion path is open) and given.

The inventors experimentally demonstrated NO.sub.2 gas sensing performance of multilayer black phosphorous (BP) field effect transistors. The BP sensors were sensitive to NO.sub.2 concentration down to 5 ppb making them comparable in sensitivity to the best 2D material based sensors. Raman spectroscopy comparison revealed no apparent change in the spectra before and after exposure to NO.sub.2, which shows that thick BP flakes can maintain their relative stability after sensing. Moreover, the BP device sensing performance fitted well with the Langmuir Isotherm for molecules adsorbed on a surface, which confirms charge transfer as the dominant mechanism for sensing. The systematic increase in conductance with increasing NO.sub.2 concentrations suggests NO.sub.2 molecules withdraw electrons and dope BP flakes with holes. These results lay the ground work for BP to be applied to various sensing applications including chemical, gas, and bio-sensors.

To be provided is a metal paste from which an electrode having high electrode activity as a sensor electrode of various gas sensors can be produced. The present invention is a metal paste for forming a gas sensor electrode obtained by dispersing a conductive particle including Pt or a Pt alloy and a ceramic powder including zirconia or stabilized zirconia, or any of zirconia and stabilized zirconia and one or more oxides of La, Ce, Pr, Nd, Sm, and Hf in a solvent, the metal paste further including an inorganic oxide particle containing alumina and an insoluble particle that is insoluble in the solvent, in which 0.5 or more to 3.0 mass % or less of the inorganic oxide particle and 1.0 to 5.0 mass % of the insoluble particle are dispersed based on the mass of the solid content of the conductive particle, the ceramic powder, the inorganic oxide particle, and the insoluble particle.

A diamond based oxygen sensor is able to function in harsh environment conditions. The oxygen sensor includes a gateless field effect transistor including a synthetic, quasi-intrinsic, hydrogen-passivated, monocrystalline diamond layer exhibiting a 2-dimension hole gas effect. The oxygen sensor also includes a sensing layer comprising yttrium-stabilized zirconia deposited onto a surface of the gateless field effect transistor.

A method for testing a gas sensor and a gas-measuring device with a testing device for testing the gas sensor provides an improved analysis and evaluation of states of gas sensors. Due to a testing of a gas admission element, by monitoring measuring signals (35, (38) in a time course (400) in conjunction with dispensing (91, 91′, 91″) a quantity of test substance, it is made possible to check whether a gas supply to the gas sensor is possible (to check if the gas diffusion path is open) and given.