The present disclosure provides a memory controller including a state detector detecting whether the memory device is in an idle state, a program controller selecting neighboring strings that are adjacent to a string that is coupled to a memory cell, among the memory cells, on which a program operation or a read operation is performed based on detection information that indicates a state of the memory device, selecting monitoring memory cells that are coupled to at least one word line, the memory cells being a part of the neighboring strings, and controlling the memory device to perform a plurality of loops to program the monitoring memory cells, and a bad block selector selecting a memory block with the monitoring memory cells as a bad block based on a rate of increase of a threshold voltage distribution of the monitoring memory cells.

Systems and methods for modifying a usage limit of a data storage device include a host interface; integrated circuit memory cells; and a processing device coupled to the host interface to provide commands with addresses to access the integrated circuit memory cells according to the address, and configured to execute firmware to perform: operations requested by commands received via the host interface; and updates to a usage limit of the data storage device.

An operation performed on a non-volatile memory device is detected. A type of the operation is determined. The type of the operation comprises a type identifier and a type modifier. A journal entry is generated reflecting the operation. The journal entry comprises a body reflecting the operation and a header comprising the type identifier and the type modifier. A combination of the type identifier and the type modifier define a size of the journal entry. The journal entry is written to a volatile memory device.

An illustrative method includes a storage management system detecting an event within a storage system, determining an operation based on the event, and providing a notification of the operation to an orchestration system configured to manage an execution of the operation by a computing system associated with the storage system.

A data retention time calculation method, apparatus, and device. said method includes: acquiring a temperature value of a solid state disk(SSD) in a past preset duration; according to the temperature value and a preset temperature acceleration model, calculating an acceleration factor corresponding to the temperature value; taking a product of the preset duration and the acceleration factor as a life cycle increment in the past preset duration; and adding the life cycle increment to a retention time of target data, so as to update a storage area of the target data in view of a preset life cycle.

A method includes determining, by component of a memory sub-system, workload characteristics corresponding to a workload to be received by the memory sub-system. The method can further include dynamically altering a performance attribute of the memory sub-system based, at least in part, based on the determined workload characteristics.

A method of operating a storage system is disclosed. The method includes determining a storage cluster among storage arrays of the storage system. Each storage array includes at least two controllers and at least one storage shelf. The at least two controllers are configured to function as both a primary controller for a first storage array and a secondary controller for a second storage array.

A power-on read circuit includes a power voltage detector, a first voltage booster, a voltage selector, a reference voltage generator and a read voltage generator. The power voltage detector detects a power voltage to generate a control signal. The first voltage booster generates a first boosted voltage according to the control signal. The voltage selector selects the power voltage or the first boosted voltage to generate a selected voltage. The reference voltage generator receives the selected voltage as an operating power source, and generates a reference voltage based on the selected voltage according to the control signal. The read voltage generator generates a second boosted voltage according to the reference voltage and a clock signal, and generate a read voltage based on the second boosted voltage according to the control signal. The read voltage is provided to a memory cell array to perform a data reading operation.

Apparatuses and methods can be related power down workload estimations using artificial neural networks. Workload estimation can include predicting a duration of a subsequent power down event of the memory device. A quantity of maintenance operations to be performed on the memory device, may be predicted based on the predicted duration of the subsequent power down event, when the memory device is powered on after the subsequent power down event using an artificial neural network. The quantity of maintenance operations may be performed on the memory device prior to the subsequent power down event of the memory device.

A data storage device includes a housing and an indicator coupled to the housing. The indicator is configured to indicate a health and/or life stage of the data storage device and operate in the absence of an external power source. The indicator is an electrophoretic display or includes a thermochromic material. The electrophoretic display includes a single indication. The electrophoretic display is a scaling bar. The indicator is coupled to a controller. The controller is configured to calculate a health parameter of the data storage device, determine that that the health parameter has exceeded a threshold, and cause the indicator change from a first state to a second state.