According to the embodiments, an external storage device switches to an interface controller for supporting only a read operation of nonvolatile memory when a shift condition for shifting to a read only mode is met. A host device switches to an interface driver for supporting only the read operation of the nonvolatile memory when determining to recognize as read only memory based on information acquired from the external storage device.

A storage management method and a storage management apparatus are provided. In some embodiments, the method includes: detecting, during a preset length of time, a writing amount per time unit of service data of a target network service in a target storage; retrieving a correspondence relationship between the writing amount per time unit and an amount of a redundant storage, wherein the relationship indicates the amount of the redundant storage increases with the increasing of the writing amount per time unit; determining a first amount of the redundant storage corresponding to the first writing amount per time unit according to the correspondence relationship; and configuring the redundant storage for the target network service in accordance with the first amount of the redundant storage.

An apparatus comprises a memory and a controller. The memory generally comprises a plurality of memory modules, each having a size less than a total size of the memory and configured to store data. The controller may be configured to process a plurality of read/write operations, classify data pages from multiple blocks of the memory as hot-read data or non hot-read data, and aggregate the hot-read data by selecting one or more of the hot-read data pages from multiple memory blocks and mapping the selected hot-read data pages to dedicated hot-read data blocks using a strong type of error correcting code during one or more of a garbage collection state, a data recycling state, or an idle state. The aggregation of the hot-read data pages and use of the strong type of error correcting code reduces read latency of the hot-read data pages, reduces a frequency of data recycling of the hot-read data pages, and reduces an impact of read disturbs on endurance of the memory.

The over-provisioning (OP) of a physical storage device (PSD) may be increased, and the useful life of the PSD increased, by converting uncompressed data stored on the PSD to compressed data. It may be determined that increasing the useful life of the PSD, and the data reduction resulting from the compression, outweigh the benefit of faster I/O response times if the data remains uncompressed. A first portion of the PSD may be initially reserved for compression. A second portion of the PSD may store compressed data. It may be determined whether it is desirable to increase the OP of the PSD to thereby reduce the effective write rate on the PSD. If compression is determined to be desirable, the dynamic portion may be compressed, thereby reducing the amount of storage space consumed by the data, and freeing up storage space that can be used by the PSD for OP.

A system and method for active disturbance rejection based thermal control is configured to receive, at a first active disturbance rejection thermal control (ADRC) controller, a first temperature measurement from a first thermal zone. The ADRC controller generates a first output control signal for controlling a first cooling element, wherein the first output control signal is generated according a first estimated temperature and a first estimated disturbance calculated by a first extended state observer (ESO) of the first ADRC controller.

A storage unit according to one aspect of the present invention comprises a storage controller and a plurality of storage devices. Each storage device has nonvolatile semiconductor memories serving as storage media. The controller of each storage device diagnoses the state of degradation of the nonvolatile semiconductor memories, and if one of the nonvolatile semiconductor memories is expected to be nearing end of life, then the controller copies the data stored in that degraded nonvolatile semiconductor memory to another nonvolatile semiconductor memory, and then performs shutdown processing for the degraded nonvolatile semiconductor memory, as well as storage capacity reduction processing.

According to one embodiment, when receiving a write request to designate a first block number and a first logical address from a host, a memory system determines a first location in a first block having the first block number, to which data from the host is to be written, and writes the data from the host to the first location of the first block. The memory system updates a first address translation table managing mapping between logical addresses and in-block physical addresses of the first block, and maps a first in-block physical address indicative of the first location to the first logical address.

A memory controller connectable to a semiconductor memory including a plurality of memory areas, includes a counter circuit configured to count a degree of wear of each of the memory areas in response to a memory operation addressed thereto, and a control circuit configured to set a rate of for wear leveling to be performed on the plurality of memory areas based on a total number of memory operations performed thereon, and select whether to perform wear leveling on each of the memory areas based on the rate, the degree of wear counted for the memory area, a first threshold for the degree of wear, and a second threshold for the degree of wear. The second threshold is greater than the first threshold.

A memory controller controls a memory device including memory blocks, and can equalize wear levels of cores for controlling memory devices. The memory controller includes: cores for controlling the zones; a reset information controller for generating reset count values representing a number of reset requests input with respect to the zones, in response to a reset request, and generating reset count sum values obtained by summing reset count values of zones controlled by each of the cores; and a wear level manager for controlling the cores such that a core that is different from a first core having a highest reset count sum value from among the cores controls some of zones controlled by the first core according to whether a difference value between the highest reset count sum value and a lowest reset count sum value from among the reset count sum values exceeds a threshold difference value.

Systems and methods are disclosed including a memory device and a processing device, operatively coupled with the memory device, to perform operations comprising: receiving a write data request to store write data to the memory device; determining a physical block address associated with the write data request; performing a bitwise operation on each bit of the physical block address to generate a seed value; generating an output sequence based on the seed value; performing another bitwise operation on the output sequence and the write data to generate a randomized sequence; and storing, on the memory device, the randomized sequence.