Systems and processes for efficient accessing, storing and transmitting of fixed data elements and dynamic data elements, each having its own native form. The data elements are organized according to a schema, with (a) all fixed data elements stored in their native forms in a fixed memory allocation, and (b) each dynamic data element stored in memory in its own native form, in its own data allocation. With this memory structure, computational overhead of converting data elements from their native forms to JSON, XML or other markup language is avoided, making accessing data (getting), updating data (setting), converting data to a serial stream for transmission or other manipulation (serializing), deserializing, and other manipulations of the data elements much more CPU efficient and requiring less bandwidth.

A method for synchronous replication of stream data includes receiving a stream of data blocks for storage at a first storage location associated with a first geographical region and at a second storage location associated with a second geographical region. The method also includes synchronously writing the stream of data blocks to the first storage location and to the second storage location. While synchronously writing the stream of data blocks, the method includes determining an unrecoverable failure at the second storage location. The method also includes determining a failure point in the writing of the stream of data blocks that demarcates data blocks that were successfully written and not successfully written to the second storage location. The method also includes synchronously writing, starting at the failure point, the stream of data blocks to the first storage location and to a third storage location associated with a third geographical region.

The present application relates to a semiconductor memory training method and related devices, belonging to the technical field of semiconductors. The method comprises: obtaining a stored historical training result of a semiconductor memory, the historical training result comprising a historical expected delay value and a historical expected voltage; setting a delay threshold and a current training voltage range, the delay threshold being less than or equal to the historical expected delay value, the current training voltage range comprising the historical expected voltage; obtaining a current minimum delay value for the semiconductor memory under the historical expected voltage; and using the stored historical training result as a current training result of the semiconductor memory, if the current minimum delay value for the semiconductor memory under the historical expected voltage is no less than the delay threshold.

Systems, apparatuses, and methods related to extended memory operations are described. Extended memory operations can include operations specified by a single address and operand and may be performed by a computing device that includes a processing unit and a memory resource. The computing device can perform extended memory operations on data streamed through the computing tile without receipt of intervening commands. In an example, a computing device is configured to receive a command to perform an operation that comprises performing an operation on a data with the processing unit of the computing device and determine that an operand corresponding to the operation is stored in the memory resource. The computing device can further perform the operation using the operand stored in the memory resource.

A storage controller including: a host interface circuit receiving first, second, third and fourth requests corresponding to first, second, third and fourth logical addresses; a memory interface circuit communicating with first nonvolatile memories through a first channel and second nonvolatile memories through a second channel; a first flash translation layer configured to manage the first nonvolatile memories; and a second flash translation layer configured to manage the second nonvolatile memories, the first flash translation layer outputs commands corresponding to the first and fourth requests through the first channel, and the second flash translation layer outputs commands respectively corresponding to the second and third requests through the second channel, and a value of the first logical address is smaller than a value of the second logical address, and a value of the third logical address is smaller than a value of the fourth logical address.

A method for execution by a dispersed storage network (DSN) managing unit includes receiving access information from a plurality of distributed storage and task (DST) processing units via a network. Cache memory utilization data is generated based on the access information. Configuration instructions are generated for transmission via the network to the plurality of DST processing units based on the cache memory utilization data.

A method described herein involves identifying a first time associated with a read operation that retrieves data of a write unit at a memory sub-system, identifying a second time associated with a write operation that stored the data of the write unit at the memory sub-system, and performing a refresh operation for the data of the write unit at the memory sub-system based on a difference between the first time associated with the read operation and the second time associated with the write operation.

In some examples, fabric driven NVMe subsystem zoning may include receiving, from a non-volatile memory express (NVMe) Name Server (NNS), a zoning specification that includes an indication of a host that is to communicate with a given NVMe subsystem of an NVMe storage domain. Based on the zoning specification, the host may be designated as being permitted to connect to the given NVMe subsystem of the NVMe storage domain. An NVMe connect command may be received from the host. Based on the designation and an analysis of the NVMe connect command, a connection may be established between the given NVMe subsystem of the NVMe storage domain and the host.

A method for operating a memory system including a memory device and a controller which controls the memory device includes identifying a target command among a plurality of commands queued in a host command queue; comparing an estimated power with a power limit; checking an estimated de-queuing time in the case where the estimated power is larger than or equal to the power limit; dequeuing the target command from the host command queue to a memory command queue in the case where the estimated de-queuing time is smaller than a predetermined threshold value; de-queueing the target command from the memory command queue to the memory device; and performing an operation corresponding to the target command.

An integrated memory assembly comprises a memory die and a control die bonded to the memory die. The memory die includes a memory structure of non-volatile memory cells. The control die is configured to program user data to and read user data from the memory die in response to commands from a memory controller. To utilize space more efficiently on the memory die, the control die compacts fragmented data on the memory die.