A method of producing a multilayer magnetoelectronic device and a related device. The method includes depositing a multilayer structure including at least two ferromagnetic layers disposed one on top of the other and each having a magnetic anisotropy with a corresponding magnetic moment. A magnetization curve is specified for the magnetoelectronic device. The number of ferromagnetic layers and, for each of the ferromagnetic layers, the magnetic moment and the magnetic hardness for obtaining the specified magnetization curve are determined. For each of the ferromagnetic layers a magnetic material, a thickness, an azimuthal angle and an angle of incidence are determined for obtaining the determined magnetic moment and magnetic hardness of the respective ferromagnetic layer. The multilayer structure is deposited using the determined material, thickness, azimuthal angle and angle of incidence for each of the ferromagnetic layers.

A magnetoresistance effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a non-magnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer, wherein at least one of the first ferromagnetic layer and the second ferromagnetic layer includes a first layer and a second layer in order from the side closer to the non-magnetic layer, the first layer contains a crystallized Co-based Heusler alloy, at least a part of the second layer is crystallized, the second layer contains a ferromagnetic element, boron element and an additive element, and the additive element is any element selected from a group consisting of Ti, V, Cr, Cu, Zn, Zr, Mo, Ru, Pd, Ta, W, Ir, Pt, and Au.

A storage element includes a layer structure including a storage layer having a direction of magnetization which changes according to information, a magnetization fixed layer having a fixed direction of magnetization, and an intermediate layer disposed therebetween, which intermediate layer contains a nonmagnetic material. The magnetization fixed layer has at least two ferromagnetic layers having a direction of magnetization tilted from a direction perpendicular to a film surface, which are laminated and magnetically coupled interposing a coupling layer therebetween. This configuration may effectively prevent divergence of magnetization reversal time due to directions of magnetization of the storage layer and the magnetization fixed layer being substantially parallel or antiparallel, reduce write errors, and enable writing operation in a short time.

This magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer. At least one of the first ferromagnetic layer and the second ferromagnetic layer has an alloy obtained by adding an additive element to a Heusler alloy. The additive element is any one or more elements selected from the group consisting of H, He, N, O, F, Ne, P, Cl, Ar, Kr, and Xe.

A heat-assisted magnetic recording (HAMR) head has a protective multilayer confined to a window of the disk-facing surface of the slider that surrounds the near-field transducer (NFT) end and write pole end. The protective multilayer is made up of a first film of silicon nitride directly on and in contact with the NFT end and the write pole end and a second film of a metal oxide on and in contact with the silicon nitride film. The silicon nitride film is preferably formed by RIBD but is thin enough so that it does not contain any significant amount of other compounds. The metal oxide is preferably silicon dioxide, or alternatively an oxide of hafnium, tantalum, yttrium or zirconium, and together with the silicon nitride film provides a protective multilayer of sufficient thickness to be optically transparent to radiation and resistant to thermal oxidation.

A magnetic sensor of the present invention has an elongate element portion having a magnetoresistive effect and a pair of elongate soft magnetic bodies that are arranged along the element portion on both sides of the element portion with regard to a short axis thereof. Each soft magnetic body includes a central portion that is adjacent to the element portion from one end to another end of the element portion with regard to a long axis direction thereof and a pair of end portions that protrude from the central portion in the long axis direction. A width of at least one of the end portions gradually decreases in a direction away from the central portion in at least a part of the end portions in the long axis direction thereof.

A magnetoresistance effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a non-magnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer, wherein at least one of the first ferromagnetic layer and the second ferromagnetic layer includes a first layer and a second layer in order from the side closer to the non-magnetic layer, the first layer contains a crystallized Co-based Heusler alloy, at least a part of the second layer is crystallized, the second layer contains a ferromagnetic element, boron element and an additive element, and the additive element is any element selected from a group consisting of Ti, V, Cr, Cu, Zn, Zr, Mo, Ru, Pd, Ta, W, Ir, Pt, and Au.

A heat-assisted magnetic recording (HAMR) head has a protective multilayer confined to a window of the disk-facing surface of the slider that surrounds the near-field transducer (NFT) end and write pole end. The protective multilayer is made up of a first film of silicon nitride directly on and in contact with the NFT end and the write pole end and a second film of a metal oxide on and in contact with the silicon nitride film. The silicon nitride film is preferably formed by RIBD but is thin enough so that it does not contain any significant amount of other compounds. The metal oxide is preferably silicon dioxide, or alternatively an oxide of hafnium, tantalum, yttrium or zirconium, and together with the silicon nitride film provides a protective multilayer of sufficient thickness to be optically transparent to radiation and resistant to thermal oxidation.

The present disclosure provides: a magnetoresistive element having a large magnetoresistance change ratio (MR ratio); and a magnetic sensor, a reproducing head and a magnetic recording and reproducing device. The magnetoresistive element comprises a magnetoresistive film including a pair of body centered cubic (bcc) crystal structure CoFe ferromagnetic layers with a (001) crystal orientation, the pair of layers separated by a non-magnetic layer of Cu with bcc crystal structure.

A storage element includes a layer structure including a storage layer having a direction of magnetization which changes according to information, a magnetization fixed layer having a fixed direction of magnetization, and an intermediate layer disposed therebetween, which intermediate layer contains a nonmagnetic material. The magnetization fixed layer has at least two ferromagnetic layers having a direction of magnetization tilted from a direction perpendicular to a film surface, which are laminated and magnetically coupled interposing a coupling layer therebetween. This configuration may effectively prevent divergence of magnetization reversal time due to directions of magnetization of the storage layer and the magnetization fixed layer being substantially parallel or antiparallel, reduce write errors, and enable writing operation in a short time.