Methods, systems, and devices for refresh counters in a memory system are described. In some examples, a memory device may include two or more counters configured to increment a respective count based on refresh operations performed on a memory array. A comparison may be made between two or more of the respective counts, which may include determining a difference between the respective counts or a difference in rate of incrementing. A memory device may transmit an indication to a host device based on determining a difference between counters, and the memory device, the host device, or both, may perform various operations or enter various operational modes based on the determined difference.

Methods, systems, and devices for retiring pages of a memory device are described. An ordered set of device information pages may be used to store device information. The device information pages may be in non-volatile memory. Each page may include a counter value of the number of accesses to indicate if the page includes valid data. A flag associated with the page may be set when the counter value reaches a threshold, to retire the page. Upon power-up, the device may determine which page to use, based on the flags. The flag may be stored in the page, or may be separate (e.g., fuse elements). If fuse elements are used, the page may store a programming-in-process flag to indicate when programming of the fuse element may not have been completed before power loss, in which case the programming may be restarted after power is restored.

A method for block addressing is provided. The method includes moving content of a data block referenced by a logical block address (LBA) from a first physical block corresponding to a first physical block address (PBA) to a second physical block corresponding to a second PBA, wherein prior to the moving a logical map maps the LBA to a middle block address (MBA) and a middle map maps the MBA to the first PBA and in response to the moving, updating the middle map to map the MBA to the second PBA instead of the first PBA.

Techniques are provided for storing a row address of a defective row of memory cells to a bank of non-volatile storage elements (e.g., fuses or anti-fuses). After a memory device has been packaged, one or more rows of memory cells may become defective. In order to repair (e.g., replace) the rows, a post-package repair (PPR) operation may occur to replace the defective row with a redundant row of the memory array. To replace the defective row with a redundant row, an address of the defective row may be stored (e.g., mapped) to an available bank of non-volatile storage elements that is associated with a redundant row. Based on the bank of non-volatile storage elements the address of the defective row, subsequent access operations may utilize the redundant row and not the defective row.

In an NVMe-based storage system, a host is connected to an NVMe controller through a PCIe bus, and the NVMe controller is connected to a storage medium. The NVMe controller receives from the host a data packet that carries payload data and an association identifier. The association identifier associates the payload data with a write instruction. The NVMe controller obtains the write instruction according to the association identifier, and then writes the payload data into the storage medium according to the write instruction.

The present specification discloses a digital device for performing a hibernation booting process and a control method therefor. Here, the digital device according to an embodiment of the present invention comprises: a first memory; a second memory storing a snapshot image generated on the basis of pieces of page data of the first memory; and a control unit for generating the snapshot image, wherein the control unit primarily deduplicates duplicated page data in the first memory and selectively secondarily deduplicates duplicated page data by comparing the duplicated page data with the snapshot image prestored in the second memory, wherein data fragmentation is minimized through the secondary deduplication step.

According to one embodiment, a memory system includes a non-volatile memory array with a plurality of memory cells. Each memory cell is a multilevel cell to which multibit data can be written. The non-volatile memory array includes a first storage region in which the multibit data of a first bit level is written and a second storage region in which data of a second bit level less than the first bit level is written. A memory controller is configured to move pieces of data from the first storage region to the second storage region based on the number of data read requests for the pieces of data received over a period of time or on external information received from a host device that sends read requests.

Operation of a non-volatile memory (NVM) storage module may comprise receiving a plurality of commands as associated with a plurality of priority-based queues from a host-memory. A received command is evaluated in accordance with a priority associated with the queue storing the command and a size of the command. The evaluated command is split into a plurality of sub-commands, each of the sub-commands having a size determined in accordance with the evaluation. A predetermined number of hardware resources are allocated for each of the evaluated command based on at least the size of each of the sub-commands to thereby enable a processing of the evaluated command based on the allocated resources. Quality of service (QoS) for the evaluated-command may thus be augmented.

Embodiments of the present disclosure relate to a memory system and an operating method of the memory system. According to embodiments of the present disclosure, a memory system may divide and manage the plurality of memory dies into a plurality of memory die groups, may set a first super memory block including at least one of memory blocks included in a first memory die group, and a second super memory block including at least one of memory blocks included in a second memory die group, may determine whether to set an extended super memory block in which all or part of the first super memory block and all or part of the second super memory block are merged, and may write a write data to the extended super memory block in an interleaving manner when writing the write data requested by a host.

A storage device is described. The storage device may store data in a storage memory, and may have a host interface to manage communications between the storage device and a host machine. The storage device may also include a translation layer to translate addresses between the host machine and the storage memory, and a storage interface to access data from the storage memory. An in-storage monitoring engine may determine characteristics of the storage device, such as latency, bandwidth, and retention.