The present application relates to a semiconductor memory training method and related devices, belonging to the technical field of semiconductors. The method comprises: obtaining a stored historical training result of a semiconductor memory, the historical training result comprising a historical expected delay value and a historical expected voltage; setting a delay threshold and a current training voltage range, the delay threshold being less than or equal to the historical expected delay value, the current training voltage range comprising the historical expected voltage; obtaining a current minimum delay value for the semiconductor memory under the historical expected voltage; and using the stored historical training result as a current training result of the semiconductor memory, if the current minimum delay value for the semiconductor memory under the historical expected voltage is no less than the delay threshold.

Systems, apparatuses, and methods related to extended memory operations are described. Extended memory operations can include operations specified by a single address and operand and may be performed by a computing device that includes a processing unit and a memory resource. The computing device can perform extended memory operations on data streamed through the computing tile without receipt of intervening commands. In an example, a computing device is configured to receive a command to perform an operation that comprises performing an operation on a data with the processing unit of the computing device and determine that an operand corresponding to the operation is stored in the memory resource. The computing device can further perform the operation using the operand stored in the memory resource.

A storage controller including: a host interface circuit receiving first, second, third and fourth requests corresponding to first, second, third and fourth logical addresses; a memory interface circuit communicating with first nonvolatile memories through a first channel and second nonvolatile memories through a second channel; a first flash translation layer configured to manage the first nonvolatile memories; and a second flash translation layer configured to manage the second nonvolatile memories, the first flash translation layer outputs commands corresponding to the first and fourth requests through the first channel, and the second flash translation layer outputs commands respectively corresponding to the second and third requests through the second channel, and a value of the first logical address is smaller than a value of the second logical address, and a value of the third logical address is smaller than a value of the fourth logical address.

A method includes determining a first memory access count threshold for a first word line of a block of memory cells and determining a second memory access count threshold for a second word line of the block of memory cells. The second memory access count threshold can be greater than the first memory access count threshold. The method can further include incrementing a memory block access count corresponding to the block of memory cells that includes the first word line and the second word line in response to receiving a memory access command and refreshing the first word line when the memory block access count corresponding to the block of memory cells is equal to the first memory access count threshold.

In some examples, fabric driven NVMe subsystem zoning may include receiving, from a non-volatile memory express (NVMe) Name Server (NNS), a zoning specification that includes an indication of a host that is to communicate with a given NVMe subsystem of an NVMe storage domain. Based on the zoning specification, the host may be designated as being permitted to connect to the given NVMe subsystem of the NVMe storage domain. An NVMe connect command may be received from the host. Based on the designation and an analysis of the NVMe connect command, a connection may be established between the given NVMe subsystem of the NVMe storage domain and the host.

Software that may be implemented using a circuit is disclosed. The software may include an Application Programming Interface (API) to receive a request from an application relating to a key-value pair for a Key-Value Solid State Drive (KV-SSD). The key-value pair may include a key and a value; the application may be executed by a processor. The software may also include combiner software to combine the key with an index to produce an indexed key, and execution software to execute an operation on the KV-SSD using the indexed key and the value.

A Memory Device (MD) for storing temporary data designated for volatile storage by a processor and persistent data designated for non-volatile storage by the processor. An address is associated with a first location in a volatile memory array and with a second location in a Non-Volatile Memory (NVM) array of the MD. Data is written in the first location, and flushed from the first location to the second location. A refresh rate for the first location is reduced after flushing the data from the first location until after data is written again to the first location. In another aspect, a processor designates a memory page in a virtual memory space as volatile or non-volatile based on data allocated to the memory page, and defines the volatility mode for the MD based on whether the memory page is designated as volatile or non-volatile.

A method for operating a memory system including a memory device and a controller which controls the memory device includes identifying a target command among a plurality of commands queued in a host command queue; comparing an estimated power with a power limit; checking an estimated de-queuing time in the case where the estimated power is larger than or equal to the power limit; dequeuing the target command from the host command queue to a memory command queue in the case where the estimated de-queuing time is smaller than a predetermined threshold value; de-queueing the target command from the memory command queue to the memory device; and performing an operation corresponding to the target command.

An integrated memory assembly comprises a memory die and a control die bonded to the memory die. The memory die includes a memory structure of non-volatile memory cells. The control die is configured to program user data to and read user data from the memory die in response to commands from a memory controller. To utilize space more efficiently on the memory die, the control die compacts fragmented data on the memory die.

Enabling a protocol for efficiently and reliably using the NVME protocol over a network, referred to as NVME over Network, or NVMEoN, may include an NVMEoN exchange layer for handling exchanges between initiating and target nodes on a network, a burst transmission protocol that provides guaranteed delivery without duplicate retransmission, and an exchange status block approach to manage state information about exchanges.