Provided is a three-dimensional storage device using wafer-to-wafer bonding. A storage device includes a first chip including a first substrate and a peripheral circuit region including a first control logic circuit configured to control operation modes of the non-volatile memory device and a second chip including a second substrate and three-dimensional arrays of non-volatile memory cells. The second chip may be vertically stacked on the first chip so that a first surface of the first substrate faces a first surface of the second substrate, and a second control logic circuit is configured to control operation conditions of the non-volatile memory device and is arranged on a second surface of the second substrate, the second surface of the second substrate being opposite to the first surface of the second substrate of the second chip.

A data storage device includes a non-volatile memory device including a memory block having a number of memory dies, and a controller coupled to the memory device. A memory access command is received and a memory access operation based on the received command is performed. A number of bytes transferred during the memory access operation is determined, and the determined number of bytes is analyzed to determine whether the number of transferred bytes is equal to a predetermined number. A transfer status fail bit is set if the number of transferred bytes is not equal to the predetermined number.

A processing device in a memory system identifies a first set of bits associated with a translation unit of a memory device, wherein the first set of bits correspond to a page field. The processing device identifies a second set of bits associated with the translation unit of the memory device, wherein the second set of bits corresponds to a block field. The processing device determines that a value representing a page number stored in the page field satisfies a threshold criterion. Responsive to determining that the value representing the page number satisfies the threshold criterion, the processing device determines a difference between the value representing the page number and a threshold value associated with the threshold criterion plurality of block stripes on a memory device. The processing device stores a value representing the difference as a plurality of bits of the second set of bits. The processing device stores a value representing a block number stored in the block field as a plurality of bits of the first set of bits.

Examples described herein relate to a network interface device comprising an interface to memory and circuitry. In some examples, the circuitry is to: determine a number of data units stored in a page in the memory and based on no data unit stored in a page of memory, permit storage of a data unit in the page in the memory.

A data storage device includes a memory device and a controller coupled to the memory device. The controller is configured to interact with a host device using Universal Flash Storage (UFS) interface protocols, provide a hint to the host device, switch between a first mode and a second mode, retrieve the data from the memory device, and deliver the data to the host device. The hint includes an indication of what order data will be received from the data storage device. The order of the data will be in a different order than a requested order after providing the hint.

A memory device includes a memory array of memory cells and control logic operatively coupled to the memory array. The control logic to perform memory erase operations including: performing a true erase sub-operation by causing multiple pulse steps to be applied sequentially to a group of memory cells of the memory array, wherein each sequential pulse step of the multiple pulse steps occurs during a pulse-step period and at a higher voltage compared to an immediately-preceding pulse-step; in response to detecting an erase suspend command during a pulse step, suspending the true erase sub-operation at a start of a subsequent pulse-step period after the pulse step; and resuming the true erase sub-operation at an end of the subsequent pulse-step period.

Exemplary methods, apparatuses, and systems include receiving a plurality of read operations. The read operations are divided into a current set of a sequence of read operations and one or more other sets. The size of the current set is a first number of read operations. An aggressor read operation is selected from the current set. A first data integrity scan is performed on a victim of the aggressor and a first indicator of data integrity is determined based on the first data integrity scan. A scaling factor is determined using the indicator of data integrity and a number of program erase cycles for the portion of memory. The set size of read operations is adjusted to a second number of read operations using the scaling factor for a subsequent set.

Embodiments of the present disclosure provide a system for testing multicore firmware (FW) in a memory system and a method thereof. A test system includes a test device and a storage device including a plurality of flash translation layer (FTL) cores, each FTL core associated with multiple memory blocks. The test device generates test preconditions for the plurality of FTL cores and provides the test preconditions to the plurality of FTL cores, the test preconditions being different from each other. Each of the plurality of FTL cores performs one or more test operations based on a corresponding test precondition of the test preconditions.

A semiconductor memory apparatus may include: a data adjusting circuit configured to conditionally adjust a weight data value for a MAC (Multiplication and ACcumulation) operation based on comparing the weight data value to a reference data value, and generate flag information indicating whether the weight data value has been adjusted; a memory cell array circuit configured to store the adjusted weight data value outputted from the data adjusting circuit; and a data calculation circuit configured to recover, on the flag information, a result based on the weight data value from a result based on the adjusted weight data value to perform the MAC operation on an input data value and the weight data value.

A method and system for initiating a garbage collection request. Historical data representative of a level of initiated I/O requests is acquired. A first operational state and a second operational state are determined based on the historical data. The first operational state and second operational state are expressed in an indication of the level of initiated I/O requests to be processed. A number of currently initiated I/O requests is acquired. A determination is made as to whether the number of currently initiated I/O requests is indicative of the first operational state or the second operational state. If the computer system is in the first operational state, the garbage collection request is initiated.