An optoelectronic device and a manufacturing method thereof are provided. The optoelectronic device includes a substrate, light emitting chips disposed on the substrate and electrically connected to the substrate, a first annular structure disposed on the substrate and around the light emitting chips, a first wavelength conversion layer disposed in the first annular structure and covering the light emitting chips, a second annular structure disposed on the substrate and around the light emitting chips and further being in contact with the first annular structure, and a second wavelength conversion layer disposed in the second annular structure and covering the first wavelength conversion layer and the light emitting chips. Wavelength conversion substances contained in the first wavelength conversion layer and the second wavelength conversion layer respectively are different in material. Therefore, the optoelectronic device can achieve improved uniformity of luminescence as well as light output quality.

Provided is a texture structure manufacturing method with which a texture structure can be obtained simply. The texture structure manufacturing method comprises: growing a layer including a randomly distributed nanostructure on a major surface of a base material; forming a light-scattering body having the nanostructure embedded therein; and exposing a surface of the light-scattering body by removing a part or all of the base material and the layer including the nanostructure.

A method for producing an optoelectronic component is described with the steps of providing monomeric structural units, providing nanoparticles in a liquid medium, mixing the monomeric structural units and the nanoparticles in the liquid medium so that a starting sol is formed, introducing an acid into the starting sol to adjust a pH value, at least partial condensation of the monomeric structural units to form a network, wherein the nanoparticles are at least partially covalently bonded to the network, so that a sol-gel material is formed, applying the sol-gel material to a semiconductor chip, curing the sol-gel material to form a coating material. Furthermore, an optoelectronic component is specified.

A display device includes: a substrate including a first light emitting region, a second light emitting region, a third light emitting region, and a light blocking region configured to partition the first to third light emitting regions; a plurality of light emitting elements on the substrate and respectively located in the first light emitting region, the second light emitting region, and the third light emitting region; a planarization layer on the plurality of light emitting elements; a wavelength conversion layer on the planarization layer and including wavelength conversion parts, a light transmitting part, and a color conversion member; and a color filter layer on the wavelength conversion layer and including a color filter, and the wavelength conversion parts are located in each of the first light emitting region and the second light emitting region, the light transmitting part is located in the third light emitting region.

A tiled display device includes: a plurality of display devices; and a thermally variable member between the plurality of display devices. The thermally variable member includes a material whose light transmittance is different depending on a temperature.

Embodiments of the present invention provide a light-emitting film, a light-emitting film array, a micro-light emitting diode (LED) array, and their manufacturing methods. In one embodiment, epitaxial layers are formed on a substrate, and a conversion film is formed on a corresponding epitaxial layer. Pixels can be defined through lithography with a very small pixel size. A mass transfer is unnecessary for this method. The produced light-emitting films and the conversion films are homogeneous films and are insoluble in water, and the manufacturing steps can be simplified due to the waterproofing function of the films.

There is provided a light emitting diode, LED, filament lamp (100) which has a longitudinal axis (LA) and provides LED filament lamp light (101). The LED filament lamp (100) comprises a LED filament (102) which comprises a light transmissive, elongated substrate (103). Said substrate (103) has a first main surface (105) at a first side (105) and a second main surface (106) at a second side (106′) opposite to the first side (105′). A plurality of LEDs (104) is mounted only onto said first main surface (105) and configured to emit LED light (107). An encapsulant (108, 114) covers the plurality of LEDs (104) and at least part of said first main surface (105). The LED filament (102) by a specific distribution of beam modifying material (115′, 115″, 109′, 109″) comprises at least a luminescent material (109′, 109″) provided in the encapsulant, and is configured to emit first LED filament light (112) in a first main direction (D1) away from the first main surface (105) and having a first color point x1,y1, and to emit second LED filament light (113) in a second main direction (D2) away from the second main surface (106) having a second color point x2,y2. The first main direction (D1) is opposite to the second main direction (D2), and, wherein (i) |x1-x2|≥0.05 and/or (ii) |y1-y2|≥0.05 applies.

An illumination unit includes: at least one optoelectronic emitter unit which emits electromagnetic radiation via a light-emitting surface, and a photonic structure for beam shaping of the electromagnetic radiation before it exits via the light emitting surface, wherein the photonic structure shapes the electromagnetic radiation such that the electromagnetic radiation has a certain far field.

The display apparatus includes a plurality of light emitting device units each including: a light generating unit 11, 21, or 31; a wavelength conversion layer 12, 22, or 32 including a color conversion layer 13, 23, or 33 that includes a particulate color conversion material; and a first light emitting device 10, a second light emitting device 20, or a third light emitting device 30 including a wavelength selection layer 14, 24, or 34. The wavelength of light emitted from the third wavelength selection layer 34 is longer than the wavelength of light emitted from the second wavelength selection layer 24 and the wavelength of light emitted from the first wavelength selection layer 14. The wavelength of light emitted from the second wavelength selection layer 24 is longer than the wavelength of light emitted from the first wavelength selection layer 14. Further, T.sub.1<T.sub.2≤T.sub.3 is satisfied, where T.sub.1 denotes the thickness of the first color conversion layer 14, T.sub.2 denotes the thickness of the second color conversion layer 24, and T.sub.3 denotes the thickness of the third color conversion layer 34.

An optoelectronic element is located in a package. The package includes a first optical block and a second optical block that are attached to each other by a bonding layer. One of the first and second optical blocks is attached to lateral walls of the package by glue. The material of the bonding layer is configured to induce less stress to the first and second optical blocks than the glue.