A multi-voltage power generation circuit is disclosed. More specifically, the multi-voltage generation circuit includes multiple voltage modulation circuits that are configured to generate and maintain multiple modulated voltages. In a non-limiting example, the multiple modulated voltages can be used for amplifying multiple radio frequency (RF) signals concurrently. Contrary to using multiple direct-current (DC) to DC (DC-DC) converters for generating the multiple modulated voltages, the voltage modulation circuits are configured to share a single current modulation circuit based on time-division. By sharing a single current modulation circuit among the multiple voltage modulation circuits, it is possible to concurrently support multiple load circuits (e.g., power amplifier circuits) with significantly reduced footprint.

Bias circuits and methods for silicon-based amplifier architectures that are tolerant of supply and bias voltage variations, bias current variations, and transistor stack height, and compensate for poor output resistance characteristics. Embodiments include power amplifiers and low-noise amplifiers that utilize a cascode reference circuit to bias the final stages of a cascode amplifier under the control of a closed loop bias control circuit. The closed loop bias control circuit ensures that the current in the cascode reference circuit is approximately equal to a selected multiple of a known current value by adjusting the gate bias voltage to the final stage of the cascode amplifier. The final current through the cascode amplifier is a multiple of the current in the cascode reference circuit, based on a device scaling factor representing the relative sizes of the transistor devices in the cascode amplifier and in the cascode reference circuit.

Methods and devices used in mobile receiver front end to support multiple paths and multiple frequency bands are described. The presented devices and methods provide benefits of scalability, frequency band agility, as well as size reduction by using one low noise amplifier per simultaneous outputs. Based on the disclosed teachings, variable gain amplification of multiband signals is also presented.

A reconfigurable amplifier includes a first transistor having a gate coupled to an input of the reconfigurable amplifier, and a source coupled to a ground. The reconfigurable amplifier also includes a gate control circuit, and a second transistor having a gate coupled to the gate control circuit, a source coupled to a drain of the first transistor, and a drain coupled to an output of the reconfigurable amplifier, wherein the gate control circuit is configured to output a bias voltage to the gate of the second transistor in a cascode mode, and output a switch voltage to the gate of the second transistor in a non-cascode mode. The reconfigurable amplifier further includes a load coupled to the output of the reconfigurable amplifier.

A package or a chip including a linear amplifier and a power amplifier is provided, wherein the linear amplifier is configured to receive an envelope tracking signal to generate an amplified envelope tracking signal, the power amplifier is supplied by an envelope tracking supply voltage comprising a DC supply voltage and the amplified envelope tracking signal, and the power amplifier is configured to receive an input signal to generate an output signal.

An RF transistor amplifier circuit comprises a Group III nitride based RF transistor amplifier having a gate terminal, a Group III nitride based self-bias circuit that includes a first Group III nitride based depletion mode high electron mobility transistor, the Group III nitride based self-bias circuit configured to generate a bias voltage, and a Group III nitride based depletion mode differential amplifier that is configured to generate an inverted bias voltage from the bias voltage and to apply the inverted bias voltage to the gate terminal of the Group III nitride based RF transistor amplifier. The Group III nitride based RF transistor amplifier, the Group III nitride based self-bias circuit and the Group III nitride based depletion mode differential amplifier are all implemented in a single die.

Bias circuits and methods for silicon-based amplifier architectures that are tolerant of supply and bias voltage variations, bias current variations, and transistor stack height, and compensate for poor output resistance characteristics. Embodiments include power amplifiers and low-noise amplifiers that utilize a cascode reference circuit to bias the final stages of a cascode amplifier under the control of a closed loop bias control circuit. The closed loop bias control circuit ensures that the current in the cascode reference circuit is approximately equal to a selected multiple of a known current value by adjusting the gate bias voltage to the final stage of the cascode amplifier. The final current through the cascode amplifier is a multiple of the current in the cascode reference circuit, based on a device scaling factor representing the relative sizes of the transistor devices in the cascode amplifier and in the cascode reference circuit.

Implementations of a class-D amplifier can be used to amplify an input analog signal and provide to a load a multilevel amplified signal having an amplitude larger than a voltage level of a power source used by the class-D amplifier.

An audio amplifier circuit for providing an output signal to an audio transducer may include a power amplifier and a control circuit. The power amplifier may include an audio input for receiving an audio input signal, an audio output for generating the output signal based on the audio input signal, and a power supply input for receiving a power supply voltage, wherein the power supply voltage is variable among at least a first supply voltage and a second supply voltage greater than the first supply voltage. The control circuit may be configured to predict, based on one or more characteristics of a signal indicative of the output signal, an occurrence of a condition for changing the power supply voltage, and responsive to predicting the occurrence of the condition, change, at an approximate zero crossing of the signal indicative of the output signal, the power supply voltage.

An amplifier system including a push-pull power amplifier having an input to receive a radio frequency (RF) input signal and an output, the push-pull power amplifier being configured to amplify the RF input signal and provide at the output an RF output signal that is an amplified version of the RF input signal, a switchable shunt capacitance switchably connected between a load-line connected to the output of the push-pull power amplifier and a reference potential, and a switch configured to selectively connect the switchable shunt capacitance to the reference potential and disconnect the switchable shunt capacitance from the reference potential to vary an impedance of load-line.