A drive acceleration circuit, including: a drive power supply, including an output end and a reference signal end, where the output end output a drive signal, and the reference signal end is connected to a connection end of a switching device and output a reference signal to the connection end; a first signal route, where the first signal route is connected to the output end of the drive power supply and a control end of the switching device, and is configured to drive, based on the drive signal, the switching device to turn on/off; and a second signal route, connected in parallel with the first signal route, including a drive acceleration unit and a selective conduction unit, one end of the drive acceleration unit is connected to the drive power supply, another end of the drive acceleration unit is connected to the switching device through the selective conduction unit.

A system includes an electronic device including a circuit having a semiconductor switch, and a switching control system operably connected to the semiconductor switch. The switching control system is configured to control a switching speed of the semiconductor switch based on a received voltage by altering at least one of a gate resistance and a gate capacitance of the semiconductor switch.

An electric assembly includes a bipolar switching device and a transistor circuit. The transistor circuit is electrically connected in parallel with the bipolar switching device and includes a normally-on wide bandgap transistor.

A drive device wherein a main switching element is connected to a main current path, an input terminal of the switching element on the higher potential side and an output terminal of the switching element on the lower potential side are electrically connected to a control terminal of the main switching element, a first resistance is connected between an input terminal of the switching element on the lower potential side and a control terminal of the main switching element, a first capacitor is parallelly connected to the first resistance, and a second capacitor is connected between a connection point of the first resistance and a control terminal of the main switching element and a terminal on the higher potential side of the main switching element.

A drive device wherein a main switching element is connected to a main current path, an input terminal of the switching element on the higher potential side and an output terminal of the switching element on the lower potential side are electrically connected to a control terminal of the main switching element, a first resistance is connected between an input terminal of the switching element on the lower potential side and a control terminal of the main switching element, a first capacitor is parallelly connected to the first resistance, and a second capacitor is connected between a connection point of the first resistance and a control terminal of the main switching element and a terminal on the higher potential side of the main switching element.

A parallel driving device that drives parallel-connected semiconductor elements includes a control unit and a gate driving circuit. The control unit detects a temperature difference between the semiconductor elements on the basis of detected values by temperature sensors that detect temperatures of the individual semiconductor elements. The control unit generates a control signal for changing the timing at which to turn on a first semiconductor element specified from the semiconductor elements on the basis of the temperature difference. The gate driving circuit generates a first driving signal for driving the semiconductor elements, and generates a second driving signal that is the first driving signal delayed on the basis of the control signal, and applies the second driving signal to the first semiconductor element.

A parallel driving device that drives parallel-connected semiconductor elements includes a control unit and a gate driving circuit. The control unit detects a temperature difference between the semiconductor elements on the basis of detected values by temperature sensors that detect temperatures of the individual semiconductor elements. The control unit generates a control signal for changing the timing at which to turn on a first semiconductor element specified from the semiconductor elements on the basis of the temperature difference. The gate driving circuit generates a first driving signal for driving the semiconductor elements, and generates a second driving signal that is the first driving signal delayed on the basis of the control signal, and applies the second driving signal to the first semiconductor element.

An apparatus includes a slew rate regulation circuit, a plurality of switches and a controller circuit. The controller circuit controls the plurality of switches to decouple a first source supply voltage from a supply rail; control the plurality of switches to couple a second source supply voltage to the supply rail to replace the first source supply voltage with the second source supply voltage; and control the slew rate regulation circuit to regulate a slew rate of a voltage of the supply rail during a time interval in which the first source supply voltage is being replaced with the second source supply voltage.

An apparatus includes a slew rate regulation circuit, a plurality of switches and a controller circuit. The controller circuit controls the plurality of switches to decouple a first source supply voltage from a supply rail; control the plurality of switches to couple a second source supply voltage to the supply rail to replace the first source supply voltage with the second source supply voltage; and control the slew rate regulation circuit to regulate a slew rate of a voltage of the supply rail during a time interval in which the first source supply voltage is being replaced with the second source supply voltage.

A gate driver integrated circuit (IC) and a method of operating the same is provided. The gate driver IC is configured to drive a transistor between switching states in a power circuit, and includes a memory configured to store at least one measurement window parameter that defines a measurement interval; measurement circuitry configured to measure, over the measurement interval, a value corresponding to an operation of the power circuit, the measured value being proportional to an input capacitance of the transistor; processing circuitry configured to determine a correction factor based on the measured value, the correction factor being proportional to the input capacitance of the transistor; and a gate controller configured to control a gate current of the transistor based on the switching states and the correction factor.