A solid-state imaging device and an imaging apparatus capable of realizing further miniaturization of an imaging apparatus and further improvement of light use efficiency are to be provided. The present technology provides a solid-state imaging device that includes a plurality of pixels arranged one- or two-dimensionally, in which each pixel includes at least a light receiving unit, and the light receiving unit included in at least some of the plurality of pixels have circularly polarized dichroism. The present technology also provides an imaging apparatus that includes at least: the solid-state imaging device; and a signal processing unit that generates an image capturing only specific circularly polarized light, on the basis of a signal obtained from at least one of the pixels of the solid-state imaging device.

According to one embodiment, a transistor substrate includes a substrate, a light source and a sensor element. The light source is mounted on the substrate. The sensor element is mounted on the substrate. The sensor element includes a pixel electrode, a switching element, a common electrode and an organic photo detector layer. The switching element is electrically connected to the pixel electrode. The common electrode is opposed to the pixel electrode. The organic photo detector layer is provided between the pixel electrode and the common electrode. The light source is provided in a same layer as the organic photo detector layer.

Disclosed is a self-powered perovskite X-ray detector. The self-powered perovskite X-ray detector according to an embodiment of the present invention has a shape wherein a scintillator converting incident X-rays into visible light is combined with a perovskite photodetector, wherein the scintillator and the perovskite light absorption layer include a perovskite compound represented by Formula 1 below:
A.sub.aM.sub.bX.sub.c  [Formula 1] where A is a monovalent cation, M is a divalent metal cation or a trivalent metal cation, X is a monovalent anion, a+2b=c when M is a divalent metal cation, a+3b=4c when M is a trivalent metal cation, and a, b, and c are natural numbers.

Disclosed is a self-powered perovskite X-ray detector. The self-powered perovskite X-ray detector according to an embodiment of the present invention has a shape wherein a scintillator converting incident X-rays into visible light is combined with a perovskite photodetector, wherein the scintillator and the perovskite light absorption layer include a perovskite compound represented by Formula 1 below:
A.sub.aM.sub.bX.sub.c  [Formula 1] where A is a monovalent cation, M is a divalent metal cation or a trivalent metal cation, X is a monovalent anion, a+2b=c when M is a divalent metal cation, a+3b=4c when M is a trivalent metal cation, and a, b, and c are natural numbers.

Visually undistorted thin film electronic devices are provided. In one embodiment, a method for producing a thin-film electronic device comprises: opening a scribe in a stack of thin film material layers deposited on a substrate to define an active region and an inactive region of the thin-film electronic device, the stack comprising at least one active semiconductor layer. The active region comprises a non-scribed area of the stack and the inactive region comprises a region of the stack where thin film material was removed by the scribe. The method further comprises depositing at least one scribe fill material into a gap opened by the scribe. The scribe fill material has embedded therein one or more coloring elements that alter an optical characteristics spectrum of the inactive region to obtain an optical characteristics spectrum of the active region within a minimum perceptible difference for an industry defined standard observer.

An electroluminescent device, a manufacturing method thereof, and a display apparatus are provided. The electroluminescent device includes an anode layer, a light emitting layer, a cathode layer, a hole transport layer located between the anode layer and the light emitting layer, and a electron transport layer located between the cathode layer and the light emitting layer. The electroluminescent device further includes: a first interface modification layer between the light emitting layer and one of the hole transport layer and the electron transport layer; wherein an energy level of the first interface modification layer matches an energy level of the light emitting layer and an energy level of the one of the hole transport layer and the electron transport layer.

An adhesive composition includes an acrylic monomer, and a crosslinking agent. A storage modulus of the adhesive composition after curing the adhesive composition at a temperature of about −20° C. divided by a storage modulus of the adhesive composition after curing the adhesive composition at a temperature of about 60° C. is be greater than about 1 and less than about 10.

A quantum dot composition includes a quantum dot, and a ligand bonded to a surface of the quantum dot, wherein the ligand includes a body part including a charge transport moiety, and a head part bonded to the surface of the quantum dot. The quantum dot composition according may be applied to a light emitting diode and a display device to provide increased luminous efficiency and device life of the light emitting diode and the display device.

Visually undistorted thin film electronic devices are provided. In one embodiment, a method for producing a thin-film electronic device comprises: opening a scribe in a stack of thin film material layers deposited on a substrate to define an active region and an inactive region of the thin-film electronic device, the stack comprising at least one active semiconductor layer. The active region comprises a non-scribed area of the stack and the inactive region comprises a region of the stack where thin film material was removed by the scribe. The method further comprises depositing at least one scribe fill material into a gap opened by the scribe. The scribe fill material has embedded therein one or more coloring elements that alter an optical characteristics spectrum of the inactive region to obtain an optical characteristics spectrum of the active region within a minimum perceptible difference for an industry defined standard observer.

Visually undistorted thin film electronic devices are provided. In one embodiment, a method for producing a thin-film electronic device comprises: opening a scribe in a stack of thin film material layers deposited on a substrate to define an active region and an inactive region of the thin-film electronic device, the stack comprising at least one active semiconductor layer. The active region comprises a non-scribed area of the stack and the inactive region comprises a region of the stack where thin film material was removed by the scribe. The method further comprises depositing at least one scribe fill material into a gap opened by the scribe. The scribe fill material has embedded therein one or more coloring elements that alter an optical characteristics spectrum of the inactive region to obtain an optical characteristics spectrum of the active region within a minimum perceptible difference for an industry defined standard observer.