A capacitor structure and a power convertor are provided by the present disclosure. The capacitor structure includes a housing and at least one core arranged inside the housing, and two electrodes of the capacitor structure are respectively led out from two ends of the housing. Thus, the pole piece required in a case that electrodes are led from the same end of the housing is omitted, thereby saving material cost. Besides, the housing and the core are respectively hollow structures, and the internal heat of the capacitor structure can be ventilated and dissipated through the corresponding hollow part, thereby improving the heat dissipation performance of the capacitor structure. In addition, by arranging the fin heat dissipation teeth on the housing, the heat dissipation area can be increased to further improve the heat dissipation efficiency.

An electronic component includes a body having a side surface, coil conductor layers wound along main surfaces parallel to the side surface, and capacitor conductor layers each having a substantially plate-like shape parallel to the side surface. The coil conductor layers and the capacitor conductor layers are arranged in a widthwise direction perpendicular to the side surface. The capacitor conductor layers include first and second capacitor conductor layers adjacent to each other in the widthwise direction. The coil conductor layers include a first coil conductor layer that is in the same layer as the first capacitor conductor layer and a second coil conductor layer that is in the same layer as the second capacitor conductor layer. The shortest distance between the first coil conductor layer and the first capacitor conductor layer is larger than the shortest distance between the second coil conductor layer and the second capacitor conductor layer.

An electronic component includes a body having a side surface, coil conductor layers wound along main surfaces parallel to the side surface, and capacitor conductor layers each having a substantially plate-like shape parallel to the side surface. The coil conductor layers and the capacitor conductor layers are arranged in a widthwise direction perpendicular to the side surface. The capacitor conductor layers include first and second capacitor conductor layers adjacent to each other in the widthwise direction. The coil conductor layers include a first coil conductor layer that is in the same layer as the first capacitor conductor layer and a second coil conductor layer that is in the same layer as the second capacitor conductor layer. The shortest distance between the first coil conductor layer and the first capacitor conductor layer is larger than the shortest distance between the second coil conductor layer and the second capacitor conductor layer.

A semiconductor-based capacitor can include a substrate including a semiconductor material, an oxide layer formed on a surface of the substrate, a conductive layer formed over at least a portion of the oxide layer, a plurality of distinct coplanar upper terminals, and at least one lower terminal formed. Each of the upper terminals and the at least one lower terminal can be exposed along the top and bottom surfaces of the substrate, respectively, for embedding the capacitor in a substrate such as a circuit board. The semiconductor-based capacitor can be sufficiently miniaturized to be embeddable within a circuit board while providing superior capacitance values. For example, a ratio of the length to the width of the substrate can be in a range from about 3:1 to about 1:3 and an area of the substrate can be less than about 3 mm.sup.2.

A semiconductor-based capacitor can include a substrate including a semiconductor material, an oxide layer formed over the substrate, a conductive layer formed over at least a portion of the oxide layer, a plurality of distinct coplanar upper terminals, and a lower terminal. The upper terminals and the lower terminal can be exposed along the top and bottom surfaces of the substrate, respectively, for embedding the capacitor in a substrate such as a circuit board. The semiconductor-based capacitor can be sufficiently miniaturized to be embeddable within a circuit board while providing superior capacitance values without compromising the integrity of the capacitor. For example, each of the upper terminals can have a maximum width and a thickness normal to the maximum width, and a ratio of the width to the thickness can be greater than about 80:1 to prevent physical damage to the capacitor from warping or cracking.

A method of capacitance structure manufacturing includes following operations. A plurality of insulating tubes is formed over a substrate and perpendicular to the substrate. A first supporting layer and a second supporting layer above the first supporting layer are formed and connect the insulating tubes. The first supporting layer protrudes from the second supporting layer. Conductive material is filled in the insulating tubes to form rod capacitors forming a capacitor array and the capacitor array is covered by an oxide layer from its top to the substrate. The oxide layer is formed along the first supporting layer and the second supporting layer such that the oxide layer extends along a direction having an angle with respect to the substrate.

A method of capacitance structure manufacturing includes following operations. A plurality of insulating tubes is formed over a substrate and perpendicular to the substrate. A first supporting layer and a second supporting layer above the first supporting layer are formed and connect the insulating tubes. The first supporting layer protrudes from the second supporting layer. Conductive material is filled in the insulating tubes to form rod capacitors forming a capacitor array and the capacitor array is covered by an oxide layer from its top to the substrate. The oxide layer is formed along the first supporting layer and the second supporting layer such that the oxide layer extends along a direction having an angle with respect to the substrate.

New types of circuit elements for integrated circuits include structures wherein a thickness dimension is much greater than a width dimension and is more closely spaced than the width dimension in order to attain a tight coupling condition. The structure is suitable to form inductors, capacitors, transmission lines and low impedance power distribution networks in integrated circuits. The width dimension is on the same order of magnitude as skin depth. Embodiments include a spiral winding disposed in a silicon substrate formed of a deep, narrow, conductor-covered spiral ridge separated by a narrow spiral trench. Other embodiments include a wide, thin conductor formed in or on a flexible insulative ribbon and wound with turns adjacent one another, or a conductor in or on a flexible insulative sheet folded into layers with windings adjacent one another Further, a method of manufacture includes directional etching of the deep, narrow spiral trench to form a winding in silicon.

New types of circuit elements for integrated circuits include structures wherein a thickness dimension is much greater than a width dimension and is more closely spaced than the width dimension in order to attain a tight coupling condition. The structure is suitable to form inductors, capacitors, transmission lines and low impedance power distribution networks in integrated circuits. The width dimension is on the same order of magnitude as skin depth. Embodiments include a spiral winding disposed in a silicon substrate formed of a deep, narrow, conductor-covered spiral ridge separated by a narrow spiral trench. Other embodiments include a wide, thin conductor formed in or on a flexible insulative ribbon and wound with turns adjacent one another, or a conductor in or on a flexible insulative sheet folded into layers with windings adjacent one another Further, a method of manufacture includes directional etching of the deep, narrow spiral trench to form a winding in silicon.

A parallel plate capacitor including a cathode core that further includes a pair of parallel electrodes and a dielectric material layer positioned between the pair of parallel electrodes. The capacitor also includes a dielectric liquid medium, where the cathode core is at least partially submerged in the dielectric liquid medium.