A method is provided for making a high permittivity dielectric material for use in capacitors. Several high permittivity materials in an organic nonconductive media with enhanced properties and methods for making the same are disclosed. A general method for the formation of thin films of some particular dielectric material is disclosed, wherein organic polymers are utilized to produce low conductivity dielectric coatings. Additionally, a method whereby the formation of certain transition metal salts as salt or oxide matrices is demonstrated at low temperatures utilizing mild reducing agents. Further, a circuit structure and associated method of operation for the recovery and regeneration of the leakage current from the long-term storage capacitors is provided in order to enhance the manufacturing yield and utility performance of such devices.

A method is provided for making a high permittivity dielectric material for use in capacitors. Several high permittivity materials in an organic nonconductive media with enhanced properties and methods for making the same are disclosed. A general method for the formation of thin films of some particular dielectric material is disclosed, wherein organic polymers are utilized to produce low conductivity dielectric coatings. Additionally, a method whereby the formation of certain transition metal salts as salt or oxide matrices is demonstrated at low temperatures utilizing mild reducing agents. Further, a circuit structure and associated method of operation for the recovery and regeneration of the leakage current from the long-term storage capacitors is provided in order to enhance the manufacturing yield and utility performance of such devices.

The instant disclosure provides a thin film capacitor and a method of manufacturing the same. The method includes the following steps: placing a carrier substrate on a processing machine including at least one processing unit, and the at least one processing unit having a metal-layer forming module and an insulation-layer forming module that are arranged along a planar production line; forming a plurality of metal layers by the metal-layer forming module of the at least one processing unit, forming a plurality of insulation layers by the insulation-layer forming module of the at least one processing unit, and the metal layers and the insulation layers being alternately stacked on the carrier substrate to form a multilayer stacked structure; and then forming two terminal electrode structures to respectively enclose two opposite side end portions of the multilayer stacked structure.

The instant disclosure provides a thin film capacitor and a method of manufacturing the same. The method includes the following steps: placing a carrier substrate on a processing machine including at least one processing unit, and the at least one processing unit having a metal-layer forming module and an insulation-layer forming module that are arranged along a planar production line; forming a plurality of metal layers by the metal-layer forming module of the at least one processing unit, forming a plurality of insulation layers by the insulation-layer forming module of the at least one processing unit, and the metal layers and the insulation layers being alternately stacked on the carrier substrate to form a multilayer stacked structure; and then forming two terminal electrode structures to respectively enclose two opposite side end portions of the multilayer stacked structure.

A multilayer capacitor includes a capacitor body including dielectric layers and a plurality of first and second internal electrodes alternately disposed with one of the dielectric layers interposed between each pair of adjacent first and second internal electrodes. First and second via electrodes penetrate through the plurality of second internal electrodes to thereby be exposed to a first surface of the capacitor body, and are disposed to be spaced apart from each other. First and second external electrodes are disposed on two side surfaces of the capacitor body and connected to opposing ends of the first internal electrodes, respectively. Third and fourth external electrodes are disposed on the first surface of the capacitor body to be spaced apart from each other, and are connected to end portions of the first and second via electrodes, respectively.

A multilayer capacitor includes a capacitor body including dielectric layers and a plurality of first and second internal electrodes alternately disposed with one of the dielectric layers interposed between each pair of adjacent first and second internal electrodes. First and second via electrodes penetrate through the plurality of second internal electrodes to thereby be exposed to a first surface of the capacitor body, and are disposed to be spaced apart from each other. First and second external electrodes are disposed on two side surfaces of the capacitor body and connected to opposing ends of the first internal electrodes, respectively. Third and fourth external electrodes are disposed on the first surface of the capacitor body to be spaced apart from each other, and are connected to end portions of the first and second via electrodes, respectively.

A thin film capacitor includes: a body in which first and second internal electrodes and dielectric layers are alternately stacked; and a plurality of first vias disposed in the body and electrically connected to the first internal electrodes and a plurality of second vias disposed in the body and electrically connected to the second internal electrodes. Each of the first and second vias includes two regions on left and right sides of a central portion, the two regions being alternately disposed in a stacking direction.

A thin film capacitor includes: a body in which first and second internal electrodes and dielectric layers are alternately stacked; and a plurality of first vias disposed in the body and electrically connected to the first internal electrodes and a plurality of second vias disposed in the body and electrically connected to the second internal electrodes. Each of the first and second vias includes two regions on left and right sides of a central portion, the two regions being alternately disposed in a stacking direction.

A heated capacitor runs current through either a lower metal plate, an upper metal plate, a lower metal trace that lies adjacent to a lower metal plate, an upper metal trace that lies adjacent to an upper metal plate, or both a lower metal trace that lies adjacent to a lower metal plate and an upper metal trace that lies adjacent to an upper metal plate to generate heat from the resistance to remove moisture from a moisture-sensitive insulating layer.

A heated capacitor runs current through either a lower metal plate, an upper metal plate, a lower metal trace that lies adjacent to a lower metal plate, an upper metal trace that lies adjacent to an upper metal plate, or both a lower metal trace that lies adjacent to a lower metal plate and an upper metal trace that lies adjacent to an upper metal plate to generate heat from the resistance to remove moisture from a moisture-sensitive insulating layer.