A capacitor unit formed by a capacitor integrated structure is provided. The capacitor integrated structure is cut to form capacitor units separated from each other, and each of the capacitor units includes: a substrate; an isolation layer located on the substrate; a capacitor stacked structure located on the isolation layer, wherein the isolation layer electrically isolates the substrate from the capacitor stacked structure; and two electrode connectors located on the capacitor stacked structure and being exposed.

a dielectric ceramic composition comprising a main component comprising an oxide represented by:

U.sub.aX.sub.bY.sub.cZ.sub.d((Ca.sub.1-x-ySr.sub.xM.sub.y).sub.m(Zr.sub.1-u-vTi.sub.uHf.sub.v)O.sub.3).sub.1-a-b-c-d

wherein the elements defined by U, X, Y, Z and M and subscripts a, b, c, d, x, y, m, u and v are defined.

Provided is an improved multilayered ceramic capacitor and an electronic device comprising the multilayered ceramic capacitor. The multilayer ceramic capacitor comprises first conductive plates electrically connected to first external terminations and second conductive plates electrically connected to second external terminations. The first conductive plates and second conductive plates form a capacitive couple. A ceramic portion is between the first conductive plates and said second conductive plates wherein the ceramic portion comprises paraelectric ceramic dielectric. The multilayer ceramic capacitor has a rated DC voltage and a rated AC V.sub.PP wherein the rated AC V.sub.PP is higher than the rated DC voltage.

Provided is the dielectric response of atomic layer-deposited and annealed polymorphic BaTiO.sub.3 and BaTiO.sub.3—AlO.sub.3 bi-layer thin films based on nanocrystalline BaTiO.sub.3 containing the perovskite and hexagonal polymorphs. Also provided are BaTiCb films having tuned Curie temperatures. Also provide are nano-grained films, comprising: a BaTiO.sub.3 film component comprising a Ba/Ti ratio of between about 0.8 and 1.06, a transition temperature of the nano-grained film being dependent on the Ba/Ti ratio, and the nano-grained film exhibiting a diffused phase transition, optionally whereby a temperature density of a dielectric constant of the nano-grained film is minimized.

A multilayer ceramic electronic component includes a ceramic body including first and second internal electrodes disposed to face each other and a dielectric layer interposed therebetween. When an average thickness of the dielectric layer is denoted as ‘td,’ an average thickness of the first and second internal electrodes is denoted as ‘te,’ and a standard deviation of thicknesses of an internal electrode, measured at a plurality of points in a predetermined region of the internal electrode, is denoted as ‘σte,’ a ratio of the standard deviation of thicknesses of the internal electrode to the average thickness of the dielectric layer, which is denoted as ‘σte/td,’ satisfies 0.12≤σte/td≤0.21.

A multi-layer ceramic electronic component includes a plurality of layered internal electrodes and a first crystal grain. The plurality of layered internal electrodes are disposed at intervals in a first direction and each include a pore. The first crystal grain has a larger diameter in the first direction than the interval and has a part disposed in the pore.

A dielectric composition having a high relative dielectric constant and high Q value even at high frequencies, and an electronic component including a dielectric film configured from the dielectric composition. This dielectric composition includes the composite oxide represented by general formula (aCaO+bSrO)—ZrO.sub.2 as a main component, and by a and b satisfying the relationships a≥0, b≥0, and 1.50<a+b≤4.00.

In a thin-film capacitor, an electrode terminal layer and an electrode layer of a capacitor portion are connected to electrode terminals by via conductors that is formed to penetrate an insulating layer in a thickness direction thereof, and a short circuit wiring in the thickness direction is realized by the via conductors. In the thin-film capacitor, an increase in the number of terminals in the plurality of electrode terminals is achieved, a decrease in length of a circuit wiring is achieved, and thus a thin-film capacitor with low-ESL has been achieved.

A capacitive element and a dielectric thin film having a small dielectric loss and a large relative permittivity, particularly at low frequencies. [Solution] This dielectric thin film includes an A-B—O—N oxynitride. When the A-B—O—N oxynitride is represented by the compositional formula A.sub.aB.sub.bO.sub.oN.sub.n, (o+n)/a<3.00 is satisfied.

The present disclosure provides a chip capacitor, including: a first capacitor unit formed over a substrate and including a first lower electrode, first dielectric layer and first upper electrode; a second insulating layer over the first capacitor unit; a second conductive layer over the second insulating layer, and includes a first wiring portion and a second wiring portion, the first wiring portion being connected to the first lower electrode by a first contact via and connected to a first pad by a third contact via, the second wiring portion being connected to the first upper electrode by a second contact via and connected to a second pad by a fourth contact via; a first external electrode connected to the first wiring portion; and a second external electrode connected to the second wiring portion.