A semiconductor device that includes a semiconductor substrate having a first main surface and a second main surface; a dielectric film on the first main surface, the dielectric film having an electrode layer disposing portion and a protective layer covering portion, and a thickness of the protective layer covering portion in a first outer peripheral end of the dielectric film is smaller than a thickness of the electrode layer disposing portion; a first electrode layer on the electrode layer disposing portion; a first protective layer covering a second outer peripheral end of the first electrode layer and at least a part of the protective layer covering portion; and a second protective layer covering the first protective layer, wherein the first protective layer has a relative permittivity lower than that of the second protective layer, and the second protective layer has moisture resistance higher than that of the first protective layer.

According to an embodiment, a capacitor includes a conductive substrate, a conductive layer and a dielectric layer. The conductive substrate has a first main surface and a second main surface. The first main surface includes sub-regions. Each sub-region is provided with recesses or projections each having a shape extending in one direction and arranged in a width direction thereof. One or more of the sub-regions and another one or more of the sub-regions are different from each other in a length direction of the recesses or protrusions. The conductive layer covers sidewalls and bottom surfaces of the recesses or sidewalls and top surfaces of the projections. The dielectric layer is interposed between the conductive substrate and the conductive layer.

To provide a thin film capacitor having high adhesion performance with respect to a multilayer substrate. A thin film capacitor includes: a metal foil having a roughened upper surface; a dielectric film covering the upper surface of the metal foil and having an opening through which the metal foil is partly exposed; a first electrode layer contacting the metal foil through the opening; and a second electrode layer contacting the dielectric film without contacting the metal foil. A height of the first electrode layer is lower than a height of the second electrode layer. This enhances adhesion performance when the thin film capacitor is embedded in a multilayer substrate and improves ESR characteristics.

A power storage device, containing two electrodes, and a plate-like crystal structure smectite-based clay film between the electrodes.

A multilayer electronic component includes a body including a plurality of internal electrodes and a dielectric layer disposed between the plurality of internal electrodes; and an external electrode disposed on the body and connected to the plurality of internal electrodes, wherein each of the plurality of internal electrodes includes a plurality of nickel layers, and a heterogeneous material layer provided between the plurality of nickel layers.

A multilayer electronic component includes a body including a dielectric layer and an internal electrode; and an external electrode including an electrode layer disposed on the body and connected to the internal electrode and a conductive resin layer disposed on the electrode layer, and the conductive resin layer includes a metal wire, a conductive metal, and a base resin.

Provided is the dielectric response of atomic layer-deposited and annealed polymorphic BaTiO.sub.3 and BaTiO.sub.3—Al.sub.2O.sub.3 bi-layer thin films based on nanocry stalline BaTiO.sub.3 containing the perovskite and hexagonal polymorphs. Also provided are BaTiO.sub.3 films having tuned Curie temperatures. Further provided are capacitive components, comprising: a plurality of films, the plurality of films comprising: a first grained film component, the first grained film component comprising at least one of SrTiO.sub.3, BaTiO.sub.3, and (Ba, Sr)TiO.sub.3, and the first grained film component being characterized as being at least partially polymorphic crystalline in nature; a second film component contacting the first grained film component, the second film component optionally comprising Al.sub.2O.sub.3, and the first grained film component optionally defining an average grain size of less than about 10 micrometers.

An electronic component includes a multilayer body including a multilayer main body including end surfaces at which internal nickel electrode layers are exposed, side gap portions, external nickel layers on the end surfaces of the multilayer body, and external copper electrode layers covering the end surfaces on which the external nickel layers are provided. A nickel-based oxide and/or a silicon-based oxide are provided between the external nickel layer and the external copper electrode layer. A nickel layer and a tin layer are provided outside the external copper electrode layer. In a cross section passing through a middle of the electronic component in the width direction and extending in the length direction and the lamination direction, a relationship of about 0.2≤Tea/Tem≤about 1.1 is satisfied.

A multilayer capacitive element and a design method of the same are provided. The capacitive element includes a substrate having a groove, a first aspect ratio modulation structure, and a plurality of conductive layers and a plurality of dielectric layers. The first aspect ratio modulation structure is located in the groove to define the groove as a first region and a first modulation region, wherein an aspect ratio of the first modulation region is different from that of the first region. The plurality of conductive layers and the plurality of dielectric layers are alternately stacked in the groove.

A multilayer ceramic electronic component includes a ceramic body that has internal electrodes stacked in a direction of a first axis, and end surfaces perpendicular to a second axis orthogonal to the first axis, the internal electrodes being alternately led out to the end surfaces, and external electrodes covering the end surfaces of the ceramic body, wherein each of the external electrodes includes a base film formed on a corresponding one of the end surfaces and connected to the plurality of internal electrodes, a first Ni film formed on the base film, a metal film that is formed on the first Ni film and contains a metal having a lower ionization tendency than Ni, as a main component, a second Ni film formed on the metal film and having a higher hydrogen concentration than the first Ni film, and a surface layer film formed on the second Ni film.