Patent classifications
H01G4/306
ELECTRONIC DEVICE
A device includes a first layer, having a copper track located therein. The first layer is covered with a second layer including a cavity. The cavity exposes at least a portion of the track. The portion is covered with a third layer of titanium nitride doped with silicon.
THIN FILM CAPACITOR AND ELECTRONIC CIRCUIT SUBSTRATE HAVING THE SAME
To provide a thin film capacitor in which peeling-off of an electrode layer is less likely to occur. A thin film capacitor includes a metal foil having a roughened upper surface, a dielectric film covering the upper surface of the metal foil and having an opening for partly exposing the metal foil therethrough, a first electrode layer contacting the metal foil through the opening and further contacting the dielectric film, and a second electrode layer contacting the dielectric film without contacting the metal foil. With this configuration, both the first and second electrode layers can be disposed on the upper surface of the metal foil. In addition, the first electrode layer contacts not only the metal foil but also the dielectric film, making peeling of the first electrode layer less likely to occur.
MULTILAYER CERAMIC ELECTRONIC COMPONENT
A multilayer ceramic electronic component includes a ceramic body, which includes an electrode-stacking portion in which internal electrodes are stacked, and cover portions facing each other in a first axis direction across the electrode-stacking portion, and external electrodes each including a covering portion that covers the ceramic body from a second axis direction, and an extending portion that extends over the cover portions along the second axis direction. The ceramic body includes crystal grains of ceramic and segregated small grains located between the crystal grains. In a cross section of an end section located between the extending portion of the cover portion and the electrode-stacking portion, the number of the segregated small grains having a grain size of 0.5% or greater and 10% or less of an average grain size of the crystal grains is 40% or greater and 95% or less of the number of the crystal grains.
THIN FILM CAPACITOR AND ELECTRONIC CIRCUIT SUBSTRATE HAVING THE SAME
To provide a thin film capacitor having high adhesion with respect to a circuit substrate. A thin film capacitor includes: a metal foil having a roughened upper surface; a dielectric film covering the upper surface of the metal foil and having an opening through which the metal foil is partly exposed; a first electrode layer contacting the metal foil through the opening; and a second electrode layer contacting the dielectric film without contacting the metal foil. An angle θa formed by the other main surface of the metal foil and a side surface thereof is more than 20° and less than 80°. The side surface is thus tapered at an angle of more than 20° and less than 80°, so that it is possible to suppress warpage and to enhance adhesion with respect to a multilayer substrate when the thin film capacitor is embedded in the multilayer substrate.
Resonant multilayer ceramic capacitors
Provided is an improved multilayered ceramic capacitor and an electronic device comprising the multilayered ceramic capacitor. The multilayer ceramic capacitor comprises first conductive plates electrically connected to first external terminations and second conductive plates electrically connected to second external terminations. The first conductive plates and second conductive plates form a capacitive couple. A ceramic portion is between the first conductive plates and said second conductive plates wherein the ceramic portion comprises paraelectric ceramic dielectric. The multilayer ceramic capacitor has a rated DC voltage and a rated AC V.sub.PP wherein the rated AC V.sub.PP is higher than the rated DC voltage.
MULTILAYER CERAMIC CAPACITOR AND MOUNTING STRUCTURE OF MULTILAYER CERAMIC CAPACITOR
A multilayer ceramic capacitor includes a multilayer body including dielectric layers and internal electrode layers, first and second main surfaces facing each other in a stacking direction, first and second side surfaces facing each other in a width direction perpendicular or substantially perpendicular to the stacking direction, and first and second end surfaces facing each other in a length direction perpendicular or substantially perpendicular to the stacking and width directions, a first external electrode on the first end surface, a second external electrode on the second end surface, a third external electrode on the first side surface, and a fourth external electrode on the second side surface. A first internal electrode layer is exposed at the first and second end surfaces, and a second internal electrode layer is exposed at the first and second side surfaces and is within a range from the second main surface to ⅓ of the multilayer body in the stacking direction.
THIN FILM CAPACITOR, ITS MANUFACTURING METHOD, AND ELECTRONIC CIRCUIT SUBSTRATE HAVING THE THIN FILM CAPACITOR
A thin film capacitor includes: a metal foil having a roughened upper surface; a dielectric film covering the upper surface of the metal foil and having an opening through which the metal foil is partly exposed; a first electrode layer contacting the metal foil through the opening; a second electrode layer contacting the dielectric film without contacting the metal foil; and an insulating member separating the first and second electrode layers. The insulating member has a tapered shape in cross section. With the above configuration, both the first and second electrode layers can be disposed on the upper surface of the metal foil. In addition, since the insulating member has a tapered shape in cross section, adhesion performance of the insulating member can be enhanced, thus making it possible to prevent short-circuit between the first and second electrode layers.
THIN FILM CAPACITOR AND ELECTRONIC CIRCUIT SUBSTRATE HAVING THE SAME
To provide a thin film capacitor in which warpage is less likely to occur. A thin film capacitor includes: a metal foil having roughened upper and lower surfaces; a dielectric film covering the upper surface of the metal foil and having an opening through which the metal foil is partly exposed; a dielectric film covering the lower surface of the metal foil and made of a dielectric material having a thermal expansion coefficient smaller than that of the metal foil; a first electrode layer contacting the metal foil through the opening; and a second electrode layer contacting the first dielectric film without contacting the metal foil. The lower surface of the metal foil is thus covered with the dielectric film having a small thermal expansion coefficient, thereby making it possible to prevent the occurrence of warpage.
THIN FILM CAPACITOR AND ELECTRONIC CIRCUIT SUBSTRATE HAVING THE SAME
To provide a thin film capacitor having high adhesion performance with respect to a circuit substrate. A thin film capacitor includes: a metal foil having a roughened upper surface; a dielectric film covering the upper surface of the metal foil and having an opening through which the metal foil is partly exposed; a first electrode layer contacting the metal foil through the opening; and a second electrode layer contacting the dielectric film without contacting the metal foil. The first and second electrode layers are formed in an area surrounded by an outer peripheral area of the upper surface of the metal foil so as not to cover the outer peripheral area. The outer peripheral area of the roughened upper surface of the metal foil is thus exposed, so that adhesion performance with respect to a circuit substrate can be enhanced.
THIN FILM CAPACITOR, ITS MANUFACTURING METHOD, AND ELECTRONIC CIRCUIT SUBSTRATE HAVING THE THIN FILM CAPACITOR
To provide a thin film capacitor in which a pair of terminal electrodes can be disposed on the same plane. A thin film capacitor includes a metal foil having a roughened upper surface, a dielectric film covering the upper surface of the metal foil and having an opening for partly exposing the metal foil therethrough, a first electrode layer contacting the metal foil through the opening, and a second electrode layer contacting the dielectric film without contacting the metal foil. With this configuration, both the first and second electrode layers can be disposed on the upper surface of the metal foil. In addition, since the metal foil is surface-roughened, a larger capacitance can be obtained.