Provided are a curable composition used for forming an interlayer existing between a base material and a curable layer, the curable composition including a curable main agent having a polymerizable functional group, a polymerization inhibitor, and a solvent, in which a content of the polymerization inhibitor is 1 part by mass or greater and lower than 1,000 parts by mass with respect to 1,000,000 parts by mass of the curable main agent; a kit including the curable composition; an interlayer formed from the curable composition; a laminate including the interlayer; an imprint pattern producing method using the laminate; and a method for manufacturing a device including the imprint pattern producing method.

The present disclosure provides a method of manufacturing a conductive pattern and applications thereof, the method including: a step of preparing a laminate including a transparent substrate, a light shielding pattern that is formed on the transparent substrate, and a negative tone photosensitive resin layer that is disposed on the transparent substrate and the light shielding pattern and is in contact with the transparent substrate; a step of irradiating a surface of the transparent substrate opposite to a surface facing the light shielding pattern with light; a step of developing the negative tone photosensitive resin layer to form a resin pattern in a region defined by the transparent substrate and the light shielding pattern; and a step of forming a conductive pattern on the light shielding pattern.

A method for manufacturing a semiconductor structure includes: providing a base; forming multiple discrete first mask layers on the base; forming multiple sidewall layers, in which each sidewall layer is configured to encircle one of the first mask layers, and each sidewall layer is connected to closest sidewall layers, the side walls, away from the first mask layers, of multiple connected sidewall layers define initial first vias and each of the initial first vias is provided with chamfers; removing the first mask layers, and each sidewall layer defines a second via; after removing the first mask layers, forming repair layers which are located on the side walls, away from the second vias, of the sidewall layers and fill the chamfers of the initial first vias to form first vias; and etching the base along the first vias and the second vias to form capacitor holes on the base.

In a beam irradiation apparatus in which a movable body holds an object, a mark detection system detects a first mark on the movable body while moving the movable body in a first direction and changing an irradiation position of a measurement beam in the first direction, the mark detection system detects a second mark while moving the movable body in the first direction and changing the irradiation position of the measurement beam in the first direction, a controller controls a position of the movable body in a second direction intersecting the first direction during a time period between the detection of the first mark and the detection of the second mark, and the controller controls the movement of the movable body to adjust a positional relation between the object on the movable body and a processing beam, based on results of the detection of the first and second marks.

A fluid supply device and a fluid supply method capable of stably supplying a supercritical fluid includes a fluid supply device for supplying a fluid in a liquid state before being changed to a supercritical fluid toward a processing chamber. The fluid supply device comprises a condenser that condenses and liquefies a fluid in a gas state, a tank that stores the fluid condensed and liquefied by the condenser, a pump that pressure-feeds the liquefied fluid stored in the tank toward the processing chamber, and a heating means provided to a flow path communicating with a discharge side of the pump and for partially changing the liquid in the flow path to a supercritical fluid.

A substrate processing apparatus includes a temperature detector and a controller. The temperature detector detects a temperature of processing liquid before the temperature of the processing liquid in pre-dispensing in progress reaches a target temperature. The controller sets discharge stop duration of the processing liquid in the pre-dispensing based on target temperature prediction duration. The target temperature prediction duration is prediction duration until the temperature of the processing liquid reaches the target temperature from a detection temperature. The detection temperature is the temperature of the processing liquid detected by the temperature detector before the temperature of the processing liquid reaches the target temperature. The target temperature prediction duration is determined based on a temperature profile. The temperature profile indicates a record of the temperature of the processing liquid changing over time when the pre-dispensing processing was performed in the past according to the pre-dispensing condition.

A developing treatment apparatus for performing a developing treatment on a treatment object substrate. The developing treatment apparatus includes: a rotating and holding part that holds and rotates the treatment object substrate; a discharger that discharges a predetermined solution relating to the developing treatment to the treatment object substrate held on the rotating and holding part; and a destaticizer that supplies ions ionized by an X-ray to the predetermined solution discharged to the treatment object substrate held on the rotating and holding part, to destaticize the predetermined solution.

A developing treatment apparatus for performing a developing treatment on a treatment object substrate. The developing treatment apparatus includes: a rotating and holding part that holds and rotates the treatment object substrate; a discharger that discharges a predetermined solution relating to the developing treatment to the treatment object substrate held on the rotating and holding part; and a destaticizer that supplies ions ionized by an X-ray to the predetermined solution discharged to the treatment object substrate held on the rotating and holding part, to destaticize the predetermined solution.

A method of processing a substrate includes: providing structures on a surface of a substrate; depositing a self-assembled monolayer (SAM) over the structures and the substrate, the SAM being reactive to a predetermined wavelength of radiation; determining a first pattern of radiation exposure, the first pattern of radiation exposure having a spatially variable radiation intensity across the surface of the substrate and the structures; exposing the SAM to radiation according to the first pattern of radiation exposure, the SAM being configured to react with the radiation; developing the SAM with a predetermined removal fluid to remove portions of the SAM that are not protected from the predetermined fluid; and depositing a spacer material on the substrate and the structures, the spacer material being deposited at varying thicknesses based on an amount of the SAM remaining on the surface of the substrate and the structures.

Embodiments described herein provide techniques for using a stress absorption material to improve solder joint reliability in semiconductor packages and packaged systems. One technique produces a semiconductor package that includes a die on a substrate, where the die has a first surface, a second surface opposite the first surface, and a sidewall surface coupling the first surface to the second surface. The semiconductor package further includes a stress absorption material contacting the sidewall surface of the die and a molding compound separated from the sidewall surface of the die by the stress absorption material. The Young's modulus of the stress absorption material is lower than the Young's modulus of the molding compound. One example of a stress absorption material is a photoresist.