A semiconductor package of the present invention comprises a base plate, an insulating substrate, and a lead frame, wherein the base plate is made of a metallic material including Cu and Be—Cu. The present invention can ensure bonding reliability and thus prevent performance degradation of semiconductor devices.

A semiconductor package that includes a conductive can, a power semiconductor device electrically and mechanically attached to the inside surface of the can, and an IC semiconductor device copackaged with the power semiconductor device inside the can.

A semiconductor package that includes a conductive can, a power semiconductor device electrically and mechanically attached to the inside surface of the can, and an IC semiconductor device copackaged with the power semiconductor device inside the can.

A semiconductor module includes a baseplate, a cover element attached to the baseplate so that detaching the cover element from the baseplate requires material deformations, and a semiconductor element in a room defined by the baseplate and the cover element. The semiconductor element is in a heat conductive relation with the baseplate and an outer surface of the baseplate is provided with laser machined grooves suitable for conducting heat transfer fluid. The laser machining makes it possible to make the grooves after the semiconductor module has been assembled. Therefore, regular commercially available semiconductor modules can be modified, with the laser machining, to semiconductor modules as disclosed.

A semiconductor device A1 disclosed includes: a semiconductor element 10 having an element obverse face and element reverse face that face oppositely in a thickness direction z, with an obverse-face electrode 11 (first electrode 111) and a reverse-face electrode 12 respectively formed on the element obverse face and the element reverse face; a conductive member 22A opposing the element reverse face and conductively bonded to the reverse-face electrode 12; a conductive member 22B spaced apart from the conductive member 22A and electrically connected to the obverse-face electrode 11; and a lead member 51 having a lead obverse face 51a facing in the same direction as the element obverse face and connecting the obverse-face electrode 11 and the conductive member 22B. The lead member 51, bonded to the obverse-face electrode 11 via a lead bonding layer 321, includes a protrusion 521 protruding in the thickness direction z from the lead obverse face 51a. The protrusion 521 overlaps with the obverse-face electrode 11 as viewed in the thickness direction z. This configuration suppresses deformation of the connecting member to be pressed during sintering treatment.

A method of reducing heat flow between IC chips and the resulting device are provided. Embodiments include attaching plural IC chips to an upper surface of a substrate; forming a lid over the IC chips; and forming a slit through the lid at a boundary between adjacent IC chips.

A method of reducing heat flow between IC chips and the resulting device are provided. Embodiments include attaching plural IC chips to an upper surface of a substrate; forming a lid over the IC chips; and forming a slit through the lid at a boundary between adjacent IC chips.

Provided is a semiconductor package including an interposer. The semiconductor package includes: a package base substrate; a lower redistribution line structure disposed on the package base substrate and including a plurality of lower redistribution line patterns; at least one interposer including a plurality of first connection pillars spaced apart from each other on the lower redistribution line structure and connected respectively to portions of the plurality of lower redistribution line patterns, and a plurality of connection wiring patterns; an upper redistribution line structure including a plurality of upper redistribution line patterns connected respectively to the plurality of first connection pillars and the plurality of connection wiring patterns, on the plurality of first connection pillars and the at least one interposer; and at least two semiconductor chips adhered on the upper redistribution line structure while being spaced apart from each other.

A semiconductor module includes a semiconductor element, a substrate on which the semiconductor module is mounted, a heat radiating plate on which the substrate is mounted, a resin case, and a first main current electrode and a second main current electrode, in which in the first main current electrode and the second main current electrode, one end of each thereof is joined to a circuit pattern on the substrate, an other end of each thereof is extended through and incorporated in a side wall of the resin case so as to project outward of the resin case, and each thereof has at least a portion of overlap at which a part thereof overlaps in parallel with each other with a gap therebetween, and each thereof has a slope portion provided between an external projection portion and an internal projection portion.

Provided is a semiconductor package and a method of manufacturing the same, wherein in the semiconductor package, an area on a surface of a heat release metal layer pressed by a molding die is expanded and the molding die directly and uniformly compresses an upper substrate and/or a lower substrate, each of which does not include heat release posts so that contamination of a substrate occurring due to a molding resin may be prevented and molding may be stably performed.