H01S3/0071

LASER AMPLIFICATION DEVICE AND EXTREME ULTRAVIOLET LIGHT GENERATION APPARATUS

A laser amplification device includes a laser oscillator that includes a first laser active medium including a mixed gas containing carbon dioxide gas and emits pulsed laser light with the full width at half maximum of between 15 ns to 200 ns, and a laser amplifier that includes a second laser active medium including a mixed gas containing carbon dioxide gas through which the pulsed laser light emitted from the laser oscillator passes to be shortened to pulsed laser light with the full width at half maximum of between 5 ns and 30 ns to be output.

FRACTIONAL HANDPIECE WITH A PASSIVELY Q-SWITCHED LASER ASSEMBLY
20230048178 · 2023-02-16 ·

A fractional handpiece and systems thereof for skin treatment include a passively Q-switched laser assembly operatively connected to a pump laser source to receive a pump laser beam having a first wavelength and a beam splitting assembly operable to split a solid beam emitted by the passively Q-switched laser assembly and form an array of micro-beams across a segment of skin. The passively Q-switched laser assembly generates a high power sub-nanosecond pulsed laser beam having a second wavelength.

Laser irradiation method and laser irradiation system

A laser irradiation method of irradiating, with a pulse laser beam, an irradiation object in which an impurity source film is formed on a semiconductor substrate includes: reading fluence per pulse of the pulse laser beam with which a rectangular irradiation region set on the irradiation object is irradiated and the number of irradiation pulses the irradiation region is irradiated, the fluence being equal to or larger than a threshold at or beyond which ablation potentially occurs to the impurity source film when the irradiation object is irradiated with pulses of the pulse laser beam in the irradiation pulse number and smaller than a threshold at or beyond which damage potentially occurs to the surface of the semiconductor substrate; calculating a scanning speed Vdx; and moving the irradiation object at the scanning speed Vdx relative to the irradiation region while irradiating the irradiation region with the pulse laser beam at the repetition frequency f.

LASER DEVICE
20230234170 · 2023-07-27 · ·

The purpose of the present invention is to provide a laser device that makes it possible to minimize condensation in a closed space by means of a simple structure. This laser device comprises a closed space (S4) in which an optical system (31) for transmitting laser light is accommodated and a dew point adjustment flow path (5) of which at least one part is a flow path wall section formed from a transmissive material (51) through which gas molecules including water vapor are transmitted and dust and oil mist are not transmitted. The transmissive material (51) separates the interior of the dew point adjustment flow path (5) and the closed space (S4).

Device and Method for Amplifying a Laser Pulse
20230238761 · 2023-07-27 ·

The invention relates to a device (10) for amplifying a laser pulse which comprises a divider section (14) for dividing the laser pulse into multiple sub pulses (43) and for introducing a time delay between the sub pulses (43), a compressor section (15) for compressing the temporally divided sub pulses (43) and a combiner section (17) for combining the compressed sub pulses (44) to one compressed laser pulse (45).

APPARATUS FOR AND METHODS OF COMBINING MULTIPLE LASER BEAMS

Apparatus for and methods of combining multiple, i.e., two or more laser beams to reduce even to the point of elimination a transverse gap between the two or more beams caused, for example, by a space between a coating on a surface of the mirror and the edge of the mirror, or by optic geometry, is avoided.

Integrated optoelectronic module
11703940 · 2023-07-18 · ·

A beam generating device includes a semiconductor substrate, having an optical passband. A first array of vertical-cavity surface-emitting lasers (VCSELs) is formed on a first face of the semiconductor substrate and are configured to emit respective laser beams through the substrate at a wavelength within the passband. A second array of microlenses is formed on a second face of the semiconductor substrate in respective alignment with the VCSELs so as to transmit the laser beams generated by the VCSELs. The VCSELs are configured to be driven to emit the laser beams in predefined groups in order to change a characteristic of the laser beams.

Laser system having a multi-stage amplifier and methods of use

A laser system having a multi-pass amplifier system which includes at least one seed source configured to output at least one seed signal having a seed signal wavelength, at least one pump source configured to output at least one pump signal, at least one multi-pass amplifier system in communication with the seed source and having at least one gain media, a first mirror, and at least a second mirror therein, the gain media device positioned between the first mirror and second mirror and configured to output at least one amplifier output signal having an output wavelength range, the first mirror and second mirror may be configured to reflect the amplifier output signal within the output wavelength range, and at least one optical system may be in communication with the amplifier system and configured to receive the amplifier output signal and output an output signal within the output wavelength range.

Laser light source and a laser crystallization apparatus including the same

A laser light source is provided including an airtight container. A first resonance mirror and a second resonance mirror are disposed outside the airtight container. The first resonance mirror includes a lens unit and a reflection coating layer. The lens unit includes a first surface and a second surface, and the first surface is inclined with respect to the second surface.

SINGLE EMITTER STACKING FOR WAVELENGTH-BEAM-COMBINING LASER SYSTEMS

In various embodiments, multiple laser emitters are arranged in one or more linear stacks and emit beams to one or more linear stacks of interleaving mirrors. The interleaving mirrors direct the beams to a shared exit point, thereby forming an output beam stack. The optical distances traversed by each beam from its emitter to the shared exit point are all equal to each other.