A semiconductor laser device includes: a package includes a recess and an upper surface that has an outer peripheral surface and a bonding surface positioned between the recess and the outer peripheral surface, the bonding surface having inner corners on the recess side and outer corners on the outer peripheral surface side; at least one semiconductor laser element disposed in the recess of the package; and a light-transmissive member bonded to the bonding surface of the package. The radius of curvature of inner corners is greater than the radius of curvature of outer corners.

A photonic synthesizer includes a multifrequency optical source to produce a signal of interest from a pair of lasers, which may be self-injection locked chip lasers. The signal is referenced to a high frequency clock using a photonic mixer/divider based on an electro-optical modulator and a relatively slow photodiode. The electro-optical modulator produces optical harmonics from the beams from the pair of lasers, where one harmonic from the first laser beam and one harmonic from the second laser beam beat on the photodiode. A phase locked control signal is generated for controlling the output frequency of one or both of the two lasers. The output signal of the photonic synthesizer is generated using a relatively fast photodiode based on a difference in frequencies of the pair of lasers. The output signal may be a millimeter wave-band signal. The photonic synthesizer can be formed as a photonic integrated circuit (PIC).

A laser module includes a plurality of light emission regions and the plurality of light emission regions emit a plurality of laser beams. An optical waveguide and a lens condense the plurality of laser beams to an identical focal point. An adjustment mechanism is configured to adjust relative positional relation between the sample stage and a condenser lens (the optical waveguide and the lens). A controller is configured to switch between a single-point irradiation mode and a multi-point irradiation mode. The single-point irradiation mode refers to a mode in which the adjustment mechanism is controlled such that the focal point of the plurality of laser beams falls on the thin film. The multi-point irradiation mode refers to a mode in which the adjustment mechanism is controlled such that the focal point does not fall on the thin film.

A method for manufacturing a component is disclosed. In an embodiment a method for producing a component includes providing a connection carrier and forming a housing body on at least a part of the connection carrier by a 3D printing method, wherein forming the housing body includes applying at least one layer of a liquid potting compound, selectively curing the at least one layer of the liquid potting compound and removing residues of the liquid potting compound.

A method for manufacturing a component is disclosed. In an embodiment a method for producing a component includes providing a connection carrier and forming a housing body on at least a part of the connection carrier by a 3D printing method, wherein forming the housing body includes applying at least one layer of a liquid potting compound, selectively curing the at least one layer of the liquid potting compound and removing residues of the liquid potting compound.

A semiconductor laser device is provided. The semiconductor laser device includes: a substrate having a first facet; a guiding layer having a second facet through which an output light is configured to be emitted; a bottom dielectric layer between the substrate and the guiding layer; and a top dielectric layer on the guiding layer. The second facet is at an angle relative to the first facet.

A semiconductor laser device is provided. The semiconductor laser device includes: a substrate having a first facet; a guiding layer having a second facet through which an output light is configured to be emitted; a bottom dielectric layer between the substrate and the guiding layer; and a top dielectric layer on the guiding layer. The second facet is at an angle relative to the first facet.

An optical transmission module, an optical data link, and an optical transmission system achieving a simplified matching circuit and a bias circuit with higher power efficiency. An optical transmission module including a first line, one end of which is connected to a high-frequency signal input unit and the other end of which is connected to a termination unit; a second line, one end of which is connected to an electrical-optical conversion unit and the other end of which is connected to a power supply connection unit of a DC power supply; and a coupling portion at which the first line is electromagnetically coupled to the second line. In the second line, a signal input from the high-frequency signal input unit is propagated only to the electrical-optical conversion unit due to an attenuation relationship between coupling characteristics and isolation characteristics of the first line and the second line. Alternatively, provided is an optical transmission module including a matching resistor connected in parallel to an electrical-optical conversion unit, a first capacitor preventing a direct current from flowing from a power supply connection unit of a DC power supply to the matching resistor, and a second capacitor connected in series between a high-frequency signal input unit and the matching resistor. Also provided are an optical data link and an optical transmission system.

There is provided an optical axis alignment mechanism between the laser oscillator and the optical fiber. The laser oscillator emits laser light, which then emerges from the emission end of the optical fiber via the axis alignment mechanism. Part of the laser light is received on the light-receiving surface of the CCD camera of a laser light evaluator. Thus, the laser light evaluator acquires a light intensity distribution. The light intensity distribution is used by the optical axis alignment mechanism to align the axis of the laser oscillator with the axis of the optical fiber.

An optical transmitter capable of significantly suppressing a fluctuation in frequency response characteristics due to a fabrication error in internal wire length while reducing a subcarrier size of a module of the optical transmitter is provided. The optical transmitter includes: a subcarrier on which an RF wiring board, a modulated laser chip, and a terminating resistor are mounted and which has a ground pad on an upper surface thereof; and a wire for electrically connecting at least the RF wiring board and the modulated laser chip to each other, wherein the RF wiring board and the modulated laser chip are arranged in a width direction of the subcarrier, and a length of the wire in an electric path which starts at the RF wiring board, passes through the terminating resistor, and reaches the ground pad is 0.5 to 1.5 mm or an inductance of the wire is 0.4 to 1.2 nH.