A power conversion device according to one or more embodiments may include: a microcomputer; and an output circuit controlled by the microcomputer, including an output unit that converts an input power into a predetermined power and outputs the predetermined power, an internal power source that supplies a power source to the microcomputer, a driver that drives the output unit by a signal from the microcomputer, and a microcomputer stop transition unit that, when an operation of the power conversion device is stopped, outputs a microcomputer stop signal to the microcomputer and causes an operation of the microcomputer to transition to a stop state. In one or more embodiments, after the microcomputer stop transition unit causes the operation of the microcomputer to transition to a stop state, the microcomputer or the output circuit may stop an output of the internal power source.

A circuit for measuring temperature of an external switch is disclosed. The circuit includes a variable resistor, a switch coupled to the variable resistor in series, a fixed value resistor coupled to the variable resistor and a comparator coupled between the variable resistor and the fixed value resistor. The circuit is configured to compare voltage drop between a drain and a source of the external switch when the external switch is in ON state with voltage drop at the variable resistor and output a signal to indicate an overtemperature based on the comparing.

An over-temperature protection circuit is described. The circuit comprises an input for sensing a voltage across a transistor, a voltage-to-current converter configured to generate a current in dependence upon the voltage, an accumulator storing a value indicative of power dissipated by the transistor and which depends on the current; and a comparator configured to determine whether the value exceeds a threshold value and, in dependence on the value exceeding the threshold value, to generate a signal to cause the transistor to be switched off.

An electronic circuit for sensing a temperature rise in a power transistor device, the temperature rise caused by a current flow in the power transistor device. The power transistor device and a sense-FET are disposed on a substrate. The sense-FET senses a fractional portion of the current flow and outputs a current signal. A JFET has its drain connected to the drain of the power transistor device. The gate of the JFET is connected to the source of the power transistor device, such that when the power transistor device is on, the JFET is also turned on, and a drain voltage signal of the power transistor device is output at a second node of the JFET. A detection circuit receives the drain voltage signal and the current signal and outputs an alarm signal when the drain-source resistance of the power transistor device exceeds a combined threshold limit.

A solid-state circuit protector includes a first power semiconductor device having an ON resistance that increases with increasing temperature and a second power semiconductor device connected in parallel with the first power semiconductor device having an ON resistance that decreases with increasing temperature. During times when abnormally high currents are flowing through the solid-state circuit protector, the second power semiconductor is switched ON so that some or all of the current is diverted through it, thus protecting the first power semiconductor device from being damaged due to overheating. The first power semiconductor device is either switched OFF, allowing it to cool in anticipation of a lighter load, or is configured to remain ON so that it shares the burden of carrying the high current with the parallel-connected second power semiconductor device yet operates cooler and at a lower ON resistance since it is not required to pass the full current.

An over-temperature protection circuit applied in a motherboard platform includes a first processor, a second processor, and a peripheral circuit. The first processor includes first temperature detection unit, the second processor includes second temperature detection unit. The over-temperature protection circuit includes third temperature detection unit and digital processing unit. The first processor can determine that the motherboard platform is in an over-temperature state through the first temperature detection unit, the second processor can determine that the motherboard platform is in the over-temperature state through the second temperature detection unit, and the digital processing unit can determine that the motherboard platform is in the over-temperature state through the third temperature detection unit. When an over-temperature state is determined by any such means, the first processor controls the motherboard platform to enter a sleep mode.

An object of the present invention is to stop the driving of a semiconductor element swiftly at a time of abnormality while sharing an output terminal between temperature information and an error signal in an IPM. In the intelligent power module of the present invention, each drive circuit includes an output control circuit configured to select the error signal while the error signal generation circuit outputs the error signal, to select the temperature signal while the error signal generation circuit does not output the error signal, and to output a selected signal as an alarm signal. The temperature signal generation circuit is configured to change the voltage value of the temperature signal in accordance with the element temperature of the specific semiconductor element within a voltage range different from the voltage value of the error signal.

A power conversion device according to one or more embodiments may include: a microcomputer; and an output circuit controlled by the microcomputer, including an output unit that converts an input power into a predetermined power and outputs the predetermined power, an internal power source that supplies a power source to the microcomputer, a driver that drives the output unit by a signal from the microcomputer, and a microcomputer stop transition unit that, when an operation of the power conversion device is stopped, outputs a microcomputer stop signal to the microcomputer and causes an operation of the microcomputer to transition to a stop state. In one or more embodiments, after the microcomputer stop transition unit causes the operation of the microcomputer to transition to a stop state, the microcomputer or the output circuit may stop an output of the internal power source.

A battery protection system includes a sensor, a primary protection circuit, coupled to the sensor, and a secondary protection circuit, coupled to the primary protection circuit and the sensor. The sensor is configured to generate a sense signal indicative of temperature in a battery pack when the sensor is activated. The primary protection circuit is configured to generate a synchronizing signal in a first state or a second state, sample the sense signal when the synchronizing signal is in the first state, and provide primary protection to the battery pack based on the sense signal. A secondary protection circuit is configured to be controlled by the synchronizing signal, sample the sense signal when the synchronizing signal is in the second state, and provide secondary protection to the battery pack based on the sense signal.

Provided herein are semiconductor dies including multiple controllers for operating over an extended temperature range. In certain embodiments, a semiconductor die includes multiple circuit modules, a temperature sensor that generates a detected temperature signal, an interface that communicates with an external host, a primary controller coupled to the interface and operable to control the circuit modules, and a secondary controller coupled to the interface. In response to the detected temperature signal indicating that the temperature of the semiconductor die exceeds a threshold temperature, the primary controller enables the secondary controller, which in turn disables the primary controller and at least a portion of the plurality of circuit modules to reduce heat dissipation.