H03B2200/0074

Oscillator for pulse communication with reduced startup latency

An oscillator for use in pulse communication of pulse signals with a startup latency and a pulse oscillation signal (such as for use in a transmitter for OOK pulse communication with pulse modulation). The oscillator includes an LC resonator having a tank impedance, and including a high-side node (Vp), and a low-side node Vn, and having a tank voltage corresponding to [Vp-Vn]. A pulse startup circuit, includes a PMOS transistor with a source connected to a supply voltage VDD, and a drain connected through a resistance R to the Vp node (where R is significantly larger than the tank impedance), and connected to an attenuation capacitance, in parallel with the resistance R. The PMOS control terminal is coupled to receive a kick start pulse to initiate a pulse signal. the oscillator can include high-side and low-side pulse startup circuits.

DEVICE AND METHOD FOR VOLTAGE CONTROLLED OSCILLATOR COMPRISING DISTRIBUTED ACTIVE TRANSFORMER CORES
20210036659 · 2021-02-04 ·

The present disclosure relates to a voltage controlled oscillator comprising a plurality of oscillator cores magnetically coupled in series.

Oscillation signal production
10903823 · 2021-01-26 · ·

An apparatus for radio-frequency (RF) oscillation signal production is disclosed. In example implementations, an apparatus includes an oscillator. The oscillator includes multiple oscillation stages that are coupled together in series into a ring. A respective oscillation stage of the multiple oscillation stages includes a transconductance amplifier and a core oscillator. The transconductance amplifier is coupled to a preceding oscillation stage. The core oscillator is coupled to the transconductance amplifier and to a succeeding oscillation stage, with the core oscillator including at least one output node configured to provide a respective output signal. In some implementations, at least one capacitor is coupled across at least the transconductance amplifier. In some aspects, at least one transistor of the transconductance amplifier is implemented with a silicon-on-insulator metal-oxide-semiconductor (SOI MOS) device that includes at least one back-gate terminal.

Oscillator calibration from over-the-air signals for low power frequency/time references wireless radios
10886929 · 2021-01-05 · ·

Oscillator calibration circuits and wireless transmitters including oscillator calibration circuits. An oscillator calibration circuit includes a first frequency locking circuit (FLC) coupled to a first oscillator, wherein the first FLC calibrates the frequency of the first oscillator using an over-the-air reference signal, wherein the first FLC calibrates the first oscillator prior to a data transmission session and remains free running during the data transmission session.

Injection-locked oscillator with variable load impedance

Injection-locked oscillator comprising: a control input receiving a control signal, the value of the natural frequency of the oscillator being a function of the amplitude of the control signal; a synchronisation input receiving a periodic synchronisation signal, the oscillator outputting an output signal with a frequency equal to the frequency of the synchronisation signal, and such that a phase shift between the output signal and the synchronisation signal depends on a difference between the natural frequency of the oscillator and the frequency of the synchronisation signal; a first load impedance onto which a load signal is applied; a second load impedance; a first coupling component periodically coupling the second load impedance to the first load impedance, at the synchronisation frequency.

Oscillator circuits and methods for realignment of an oscillator circuit

Oscillators and methods for realignment of an oscillator are provided. An oscillator includes an inductor having first and second terminals and a capacitor electrically coupled in parallel to the inductor at the first and second terminals. A first transistor of a first conductivity type is electrically coupled to the first terminal and a voltage source. The first transistor includes a gate configured to receive a first realignment signal. When the first realignment signal is in a realignment state, the first transistor is turned on and a voltage of the first terminal is increased from a low level to a high level in order to align a phase of a waveform of the oscillator.

Multi-stage sub-THz frequency generator incorporating injection locking

A novel and useful mm-wave frequency generation system is disclosed that takes advantage of injection locking techniques to generate an output oscillator signal with improved phase noise (PN) performance and power efficiency. Low frequency and high frequency DCOs as well as a pulse generator make up the oscillator system. A fundamental low frequency (e.g., 30 GHz) signal and its sufficiently strong higher (e.g., fifth) harmonic (e.g., 150 GHz) are generated simultaneously in a single oscillator system. The second high frequency DCO having normally poor phase noise is injected locked to the first low frequency DCO having good phase noise. Due to injection locking, the high frequency output signal generated by the second DCO exhibits good phase noise since the phase noise of the second DCO tracks that of the first DCO.

Calibrating an injection locked oscillator

A circuit for calibrating an injection locked oscillator is provided. The injection locked oscillator includes an injection locking input, an LC tank and an oscillator output to output an oscillator output signal. The circuit is configured to adjust a capacitance of the LC tank to different values, detect an amplitude of the oscillator output signal for each value of the different values of the capacitance while an input signal having a target frequency is applied to the injection locking input, determine a maximum amplitude of the detected amplitudes, and select a value for operating the injection locked oscillator based on the determined maximum amplitude.

NON-CONTACT SELF-INJECTION-LOCKED VITAL SIGN SENSOR
20200359930 · 2020-11-19 ·

A non-contact self-injection-locked vital sign sensor is disclosed, which includes transmitting antenna, receiving antenna, self-injection-locked integrated circuit and demodulator. The self-injection-locked integrated circuit includes voltage-controlled oscillator, mixer, two amplifiers and harmonic-frequency power combiner. A frequency-multiplied signal is produced by amplifiers and harmonic-frequency power combiner then transmitted to a living body by transmitting antenna. A frequency-divided signal is produced by voltage-controlled oscillator and mixer then transmitted to voltage-controlled oscillator, then a frequency- and amplitude-modulated signal is produced by the voltage-controlled oscillator then transmitted to demodulator to produce a vital sign. So as to detect vital sign with a higher frequency to increase measurement sensitivity by using a low-cost integrated circuit process. A centrifugal compressor includes a volute base block, a volute cover plate, an impeller, a diffuser-adjusting assembly, a radial constraint assembly, an axial constraint assembly and a driving assembly.

Injection lock power amplifier with back-gate bias
10790789 · 2020-09-29 · ·

In an exemplary structure, a transformer has a primary side and a secondary side. Output from the primary side is coupled to the secondary side. A first power supply is connected to a center tap of the primary side of the transformer. An oscillator includes a first transistor and a second transistor. The front-gate of the first transistor is connected to the drain of the second transistor and the primary side of the transformer. The front-gate of the second transistor is connected to the drain of the first transistor and the primary side of the transformer. A third transistor is connected to the first transistor and a fourth transistor is connected to the second transistor. The third and fourth transistors inject a desired frequency to the oscillator. A voltage source is connected to the back-gate of the first transistor and the back-gate of the second transistor.