Enhanced Coulomb repulsion (electron) screening around light element nuclei is achieved by way of utilizing target structures (e.g., nanoparticles) that undergo plasmon oscillation when subjected to electromagnetic (EM) radiation, whereby transient high density electron clouds are produced in localized regions of the target structures during each plasmon oscillation cycle. Each target structure includes an integral body composed of an electrically conductive material that contains light element atoms (e.g., metal hydrides, metal deuterides or metal tritides). The integral body is also configured (i.e., shaped/sized) to undergo plasmon oscillations in response to the applied EM radiation such that the transient high density electron clouds are formed during each plasmon oscillation cycle, whereby brief but significantly elevated charge density variations are generated around light element (e.g., deuterium) atoms located in the localized regions, thereby enhancing Coulomb repulsion screening to enhance nuclear fusion reaction rates. Various target structure compositions and configurations are disclosed.

Enhanced Coulomb repulsion (electron) screening around light element nuclei is achieved by way of utilizing target structures (e.g., nanoparticles) that undergo plasmon oscillation when subjected to electromagnetic (EM) radiation, whereby transient high density electron clouds are produced in localized regions of the target structures during each plasmon oscillation cycle. Each target structure includes an integral body composed of an electrically conductive material that contains light element atoms (e.g., metal hydrides, metal deuterides or metal tritides). The integral body is also configured (i.e., shaped/sized) to undergo plasmon oscillations in response to the applied EM radiation such that the transient high density electron clouds are formed during each plasmon oscillation cycle, whereby brief but significantly elevated charge density variations are generated around light element (e.g., deuterium) atoms located in the localized regions, thereby enhancing Coulomb repulsion screening to enhance nuclear fusion reaction rates. Various target structure compositions and configurations are disclosed.

A microelectronic module for altering the electromagnetic signature of a surface. The microelectronic module includes at least one voltage converter for converting a first voltage provided into a higher, lower or identical second voltage. Furthermore, the microelectronic module includes at least one actuator. The actuator includes at least one generator for generating an electrical plasma from the second voltage provided by the voltage converter. At least the voltage converter and the actuator are arranged on a thin-layered planar substrate. The electrical plasma generated by the actuator interacts with an electromagnetic radiation impinging on the surface, as a result of which the electromagnetic signature is altered.

In detecting the unignited state of plasma based on a reflected wave, false detection during a normal plasma ignition time is prevented so as to detect the unignited state during plasma abnormality. When a pulse output is supplied to a plasma load by pulse driving from an RF power source, the unignited state of plasma abnormality is detected on the basis of the continuous state of the reflected wave, whereby a total reflected wave generated in the unignited state during plasma abnormality is detected in distinction from the reflected wave generated in the normal ignited state. With this configuration, in detecting the unignited state by comparing a peak value of the reflected wave with a threshold, it is possible to prevent that a reflected wave generated in the normal ignited state is erroneously detected as the total reflected wave that is generated in the abnormal unignited state.