A method for measuring an electron nonextensive parameter of a plasma by using nonextensive statistical mechanics and electric probe is provided. The plasma is described by the nonextensive statistical mechanics and establishes a nonextensive single electric probe theory on the basis of this. The electron nonextensive parameter have been measured which cannot be measured by traditional single probe, and obtained more accurate electron temperature, plasma potential, electron density and floating potential than traditional single probe. The nonextensive electric probe plays a role in plasma diagnosis, which will measure the nonextensivity of plasma and improve the diagnostic accuracy of other plasma parameters.

This disclosure relates to systems and methods detecting a change in pressure, wall shear flow, or both. The method includes generating DC plasma having an electrical field based on an input DC voltage and a DC current, detecting changes to the electrical field, and identifying a change in wall shear flow, pressure, or both based on the change in the electrical field when the DC plasma is disposed in a flow field.

A method of controlling a semiconductor process includes performing a semiconductor process using plasma in a chamber including an electrostatic chuck (ESC) on which a wafer is seated, obtaining an ESC voltage supplied to the ESC, an ESC current detected from the ESC, and bias power supplied to a bias electrode in the chamber, while the semiconductor process is being performed in the chamber, and determining whether a discharge has occurred between the ESC and the wafer using at least one of the ESC voltage, the ESC current, and the bias power.

The present invention relates to a plasma diagnosing system and method, and more particularly, to a system and a method for diagnosing plasma in real time using a change in a capacitance sensed by an electrode using a reference waveform having a frequency different from a plasma discharging frequency band region. The sensed capacitance varies before and after discharging plasma and the plasma is diagnosed using the change in capacitance in real time.

The present invention relates to a method for measuring the ion nonextensive parameter of plasma includes the following steps: describe the plasma with nonextensive statistical mechanics, obtain the equation describing the relationship between the geodesic acoustic mode frequency and the ion acoustic speed of plasma; collect the measurement data of the geodesic acoustic mode frequencies and plasma temperature in the device where the plasma is to be measured; the obtained equation describing the relationship between the geodesic acoustic mode frequency and the ion acoustic speed of plasma is used to linearly fit the collected measured data of the geodesic acoustic mode frequency and the plasma temperature in the device where the plasma is to be measured to obtain the slope value; based on the derived equation and the obtained slope values, and combining with the safety factor of the device where the plasma is to be measured, the ion nonextensive parameter is solved numerically. The present invention fills the gap where the electron nonextensive parameter can be measured with the nonextensive single electric probe, but the corresponding ion nonextensive parameter cannot be diagnosed yet in the field of nonextensive parameters diagnosis.

Methods and systems for controlling temperatures in plasma processing chamber with reduced controller response times and increased stability. Temperature control is based at least in part on a feedforward control signal derived from a plasma power input into the processing chamber. A feedforward control signal compensating disturbances in the temperature attributable to the plasma power may be combined with a feedback control signal counteracting error between a measured and desired temperature.

An electric field sensor includes a probe, a cylindrical probe guide, an insulating member, a preload spring and a connector. The probe serves as an inner conductor of a coaxial transmission path and has a portion forming a monopole antenna at a tip end to be in constant contact with a microwave transmission window by a pressing force of a built-in spring thereof. The probe guide is disposed at an outer side of the probe and serves as an outer conductor of the coaxial transmission path. The insulating member is disposed between the probe and the probe guide. The preload spring preloads the probe guide downward and presses the probe guide so that the tip end of the probe guide comes in constant contact with the planar slot antenna. The connector is connected to the probe and the probe guide to connect coaxial signal cables for extracting signals.

A vacuum processing system for a flexible substrate is provided. The vacuum processing system includes a first chamber adapted for housing a supply roll for providing the flexible substrate; a second chamber adapted for housing a take-up roll for storing the flexible substrate after processing; a substrate transport arrangement including one or more guide rollers for guiding the flexible substrate from the first chamber to the second chamber; a maintenance zone between the first chamber and the second chamber wherein the maintenance zone allows for maintenance access to or of at least one of the first chamber and the second chamber; and a first process chamber for processing the flexible substrate.

The present invention relates to a plasma diagnosing system and method, and more particularly, to a system and a method for diagnosing plasma in real time using a change in a capacitance sensed by an electrode using a reference waveform having a frequency different from a plasma discharging frequency band region. The sensed capacitance varies before and after discharging plasma and the plasma is diagnosed using the change in capacitance in real time.

A substrate treating apparatus includes a chamber having a space therein in which a substrate is treated, a support unit that supports the substrate in the chamber, a gas supply unit that supplies gas into the chamber, and a plasma generation unit that excites the gas in the chamber into a plasma state. The plasma generation unit includes a high-frequency power supply, a first antenna connected to one end of the high-frequency power supply, a second antenna connected with the first antenna in parallel, and a current divider that distributes electric current to the first antenna and the second antenna. The current divider includes a first capacitor disposed between the first antenna and the second antenna, a second capacitor connected with the second antenna in parallel, and a third capacitor connected with the second antenna in series. The second capacitor and the third capacitor are implemented with a variable capacitor.