The present invention relates to an organic electronic device comprising, between an anode and a cathode, at least one layer selected from an electron injection layer, an electron transport layer or an electron generation layer, the layer comprising at least one compound of the following Formula (I), wherein the compound of Formula (I) comprises one or more moieties -(A).sub.a-L and the remaining positions marked with * are hydrogen or substituents independently selected from the group consisting of deuterium, fluorine, RF, C.sub.1-C.sub.20 linear alkyl, C.sub.3-C.sub.20 branched alkyl, C.sub.1-C.sub.12 linear fluorinated alkyl, CN, RCN, C.sub.6-C.sub.20 aryl, C.sub.2-C.sub.20 heteroaryl, (PO)R.sub.2; wherein each R is independently selected from C.sub.1-C.sub.20 linear alkyl, C.sub.1-C.sub.20 alkoxy, C.sub.1-C.sub.20 thioalkyl, C.sub.3-C.sub.20 branched alkyl, C.sub.3-C.sub.20 cyclic alkyl, C.sub.3-C.sub.20 branched alkoxy, C.sub.3-C.sub.20 cyclic alkoxy, C.sub.3-C.sub.20 branched thioalkyl, C.sub.3-C.sub.20 cyclic thioalkyl, C.sub.6-C.sub.20 aryl and C.sub.2-C.sub.20 heteroaryl; A is selected from substituted or unsubstituted C.sub.6-C.sub.24 aryl or C.sub.2-C.sub.20 heteroaryl; wherein in case that A is substituted, the respective substituents are independently selected from the group consisting of deuterium, fluorine, C.sub.1-C.sub.20 linear alkyl, C.sub.3-C.sub.20 branched alkyl, linear fluorinated C.sub.1-C.sub.12 alkyl, CN, C.sub.6-C.sub.20 aryl, and C.sub.2-C.sub.2 heteroaryl; L is selected from substituted or unsubstituted C.sub.2-C.sub.42 heteroaryl, substituted or unsubstituted C.sub.6-C.sub.24 aryl or a polar group selected from (formula (aa)), (formula (bb)) and (formula (cc)), wherein substituents, if present in the respective group L are independently selected from the group consisting of deuterium, N fluorine, C.sub.1-C.sub.20 linear alkyl, C.sub.3-C.sub.20 branched alkyl, C.sub.3-C.sub.20 cyclic alkyl, C.sub.1-C.sub.20 linear alkoxy, C.sub.3-C.sub.20 branched alkoxy, C.sub.1-C.sub.12 linear fluorinated alkyl, C.sub.1-C.sub.12 linear fluorinated alkoxy, C.sub.3-C.sub.12 branched fluorinated cyclic alkyl, C.sub.3-C.sub.12 fluorinated cyclic alkyl, C.sub.3-C.sub.12 fluorinated cycle alkoxy, CN, RCN, C.sub.6-C.sub.20 aryl, C.sub.2-C.sub.20 heteroaryl, OR, SR, (CO)R, (CO)NR.sub.2, SiR.sub.3, (SO)R (SO).sub.2R, (PO)R.sub.2; wherein each R independently selected from C.sub.1-C.sub.20 linear alkyl, C.sub.1-C.sub.20 alkoxy, C.sub.1-C.sub.20 thioalkyl, C.sub.3-C.sub.20 branched alkyl, C.sub.3-C.sub.20 cyclic alkyl, C.sub.3-C.sub.20 branched alkoxy, C.sub.3-C.sub.20 cyclic alkoxy, C.sub.3-C.sub.20 branched thioalkyl, C.sub.3-C.sub.20 cyclic thioalkyl

The present disclosure provides a cathode interface modification material composition, a preparation method and use thereof. In the present disclosure, a uniformly dispersed novel cathode interface modification material composition is obtained by adding a carbon nanomaterial to a cathode interfacial material and dispersing the same in a polar solvent. The cathode interface modification material composition of the present disclosure and the cathode interface modification layer prepared using the cathode interface modification material composition of the present disclosure can be used for the fabrication of various types of organic photoelectric devices.

A sensor includes an anode and a cathode, and a near-infrared photoelectric conversion layer between the anode and the cathode. The near-infrared photoelectric conversion layer is configured to absorb light of at least a portion of a near-infrared wavelength spectrum and convert the absorbed light into an electrical signal. The near-infrared photoelectric conversion layer includes a first material having a maximum absorption wavelength in the near-infrared wavelength spectrum and a second material forming a pn junction with the first material and having a wider energy bandgap than an energy bandgap of the first material. The first material is included in the near-infrared photoelectric conversion layer in a smaller amount than the second material.

A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode and a second electrode facing each other; and a photoelectric conversion layer provided between the first electrode and the second electrode, and including a first organic semiconductor material, a second organic semiconductor material, and a third organic semiconductor material that have mother skeletons different from one another. The first organic semiconductor material is one of fullerenes and fullerene derivatives. The second organic semiconductor material in a form of a single-layer film has a higher linear absorption coefficient of a maximal light absorption wavelength in a visible light region than a single-layer film of the first organic semiconductor material and a single-layer film of the third organic semiconductor material. The third organic semiconductor material has a value equal to or higher than a HOMO level of the second organic semiconductor material.

An organic photovoltaic device comprises an anode and a cathode, an active layer positioned between the anode and the cathode, comprising a first donor material and a first acceptor material in a first ratio, and an interface layer positioned between the anode and the cathode, comprising a second donor material and a second acceptor material in a second ratio. A method of fabricating an organic photovoltaic device and an organic photovoltaic device produced with the disclosed methods are also disclosed herein.

A solid-state imaging element including: a photoelectric conversion layer, a first electrode and a second electrode opposed to each other with the photoelectric conversion layer interposed therebetween, a semiconductor layer provided between the first electrode and the photoelectric conversion layer, an accumulation electrode opposed to the photoelectric conversion layer with the semiconductor layer interposed therebetween, an insulating film provided between the accumulation electrode and the semiconductor layer, and a barrier layer provided between the semiconductor layer and the photoelectric conversion layer.

Provided are a compound represented by formula 1, a display panel and display apparatus. In formula 1, L.sub.1-L.sub.5 are each a linking group independently selected from the group consisting of a single bond, C1-C10 alkylene, C6-C30 arylene, C6-C30 fused arylene, C4-C30 heteroarylene, and C4-C30 fused heteroarylene; R.sub.1-R.sub.5 are each independently selected from the group consisting of hydrogen, aryl and heteroaryl; and a, b, c, d, and e are each independently 0, 1, 2, or 3. The compound has a spirane structure containing a boron heterocyclic ring and can be used as a light-emitting host material of OLEDs. By introducing the bipolar host material into the OLED, charge transfer balance is beneficially balanced in the light-emitting layer, which broadens exciton recombination region, simplifies device structure, and improves device efficiency.

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According to some embodiments, an organic device and method of forming an organic device are disclosed. A hybrid cathode layer is formed in stacked alignment with a substrate. The hybrid cathode layer includes a combination of a conductive nanowire and an electron-transport material. After forming the hybrid cathode layer, a photoactive layer is formed on a structure that includes the substrate and the hybrid cathode layer. After forming the photoactive layer, a hybrid anode layer that is separated from the hybrid cathode layer by the photoactive layer is formed. The hybrid anode layer includes a combination of a conductive nanowire and a hole-transporting material.

The present invention is related to a solar cell comprising a first electrode; a second electrode; and a stack of layers provided between the first electrode and the second electrode; wherein the stack of layers comprises one light absorbing layer provided with a perovskite crystal structure; and at least one dopant layer, wherein the dopant layer consists of one or more n-dopant material(s); or one or more p-dopant material(s).

There is provided an imaging device including an upper electrode; a lower electrode; a photoelectric conversion layer disposed between the upper electrode and the lower electrode; and a first organic semiconductor material including an indolocarbazole derivative and disposed between the upper electrode and the lower electrode. Further, there is provided an electronic apparatus including an imaging device that includes an upper electrode; a lower electrode; a photoelectric conversion layer disposed between the upper electrode and the lower electrode; and a first organic semiconductor material including an indolocarbazole derivative and disposed between the upper electrode and the lower electrode.