An organic x-ray detector and a method of making the organic x-ray detector are disclosed. The x-ray detector includes a TFT array disposed on a substrate, an organic photodiode layer disposed on the TFT array, a barrier layer disposed on the photodiode layer, and a scintillator layer disposed on the barrier layer, such that the barrier layer includes at least one inorganic material.

The present disclosure provides a photoelectric conversion device including a semiconductor substrate including a signal output portion, an electrode, and an organic compound layer disposed between the signal output portion and the electrode and including a photoelectric conversion layer, wherein the signal output portion is in contact with the organic compound layer.

An organic charge integrating device is presented. The organic charge integrating device includes a thin film transistor (TFT) array, a first electrode layer disposed on the TFT array, an organic photoactive layer disposed on the first electrode layer, and a second electrode layer disposed on the organic photoactive layer. The organic photoactive layer has a thickness in a range from about 700 nanometers to about 3 microns. An organic x-ray detector is presented. An imaging system including the organic x-ray detector is also presented.

A detection apparatus is provided for detection of x-ray radiation, with a lower layer arranged between a lower electrode and a middle electrode. In an embodiment, the lower layer includes at least one first perovskite. In an embodiment, a first voltage is able to be applied between the lower electrode and the middle electrode; and an upper layer is arranged between an upper electrode and the middle electrode. The upper layer features at least one second perovskite and a second voltage is able to be applied between the upper electrode and the middle electrode. Finally, an evaluation device, which is coupled to the upper layer and the lower layer, is embodied to detect an interaction of x-ray radiation with the first perovskite and an interaction of x-ray radiation with the second perovskite.

Two-terminal electronic devices, such as photodetectors, photovoltaic devices and electroluminescent devices, are provided. The devices include a first electrode residing on a substrate, wherein the first electrode comprises a layer of metal; an I-layer comprising an inorganic insulating or broad band semiconducting material residing on top of the first electrode, and aligned with the first electrode, wherein the inorganic insulating or broad band semiconducting material is a compound of the metal of the first electrode; a semiconductor layer, preferably comprising a p-type semiconductor, residing over the I-layer; and a second electrode residing over the semiconductor layer, the electrode comprising a layer of a conductive material. The band gap of the material of the semiconductor layer, is preferably smaller than the band gap of the I-layer material. The band gap of the material of the I-layer is preferably greater than 2.5 eV.

Methods and devices that use alkali metal chalcohalides having the chemical formula A.sub.2TeX.sub.6, wherein A is Cs or Rb and X is I or Br, to convert hard radiation, such as X-rays, gamma-rays, and/or alpha-particles, into an electric signal are provided. The devices include optoelectronic and photonic devices, such as photodetectors and photodiodes. The method includes exposing the alkali metal chalcohalide material to incident radiation, wherein the material absorbs the incident radiation and electron-hole pairs are generated in the material. A detector is configured to measure a signal generated by the electron-hole pairs that are formed when the material is exposed to incident radiation.

A photodetector array (1) is provided comprising a plurality of pixels (10.sub.ij) between a supply line (4j) and a common electrode (2). Respective pixels (10.sub.ij) comprise a photon radiation sensitive element (11.sub.ij) arranged in a series connection with a switching element (20.sub.ij) characterized in that the series connection further includes a resistive element (30ij).

A detection substrate and a flat-panel detector, and relates to the technical field of photoelectric detection. The detection substrate can improve radiation resistance and prolong a service life without increasing the thickness of a scintillator layer. The detection substrate includes a plurality of detection pixel units arranged in an array. Each of the detection pixel units includes: a transistor, a photoelectric conversion section, and a scintillator layer, with the photoelectric conversion section disposed between the transistor and the scintillator layer, the photoelectric conversion section includes a radiation sensitive layer and a photosensitive unit, which are laminated in arrangement; the radiation sensitive layer is configured to absorb rays and convert the rays into carriers; and the photosensitive unit is configured to at least absorb visible light and convert the visible light into carriers. The present disclosure is applicable to the production of the detection substrates.

An image sensor array formed on a flexible first substrate is supported by a flexible second substrate attached thereto. The second substrate has a top surface with an adhesive thereon for attaching the substrates together. The adhesive is on a portion of the second substrate directly beneath the image sensor array to allow selective formation of the second substrate.

Method for depositing an organic or hybrid organic/inorganic perovskite layer on a substrate comprising the following steps: a) providing a substrate and an organic or hybrid organic/inorganic target, b) positioning the substrate and the target, in a close space sublimation furnace, c) depositing an organic or hybrid organic/inorganic perovskite layer on the substrate by sublimation of the target, the temperature difference between the target and the substrate being, preferably, comprised between 50° C. and 350° C., even more preferentially between 50° C. and 200° C., the thickness of the deposited organic or hybrid organic/inorganic perovskite layer being, preferably, comprised between 50 nm and 5000 μm.