A multi-laver device and its method of manufacture are disclosed. The multi-layer device comprises a first electrode layer, a first repair layer, a functional layer, and a second electrode layer. The first repair layer comprises a conductive hydrogel film or conductive hydrogel beads, the conductive hydrogel film or the conductive hydrogel beads comprising conductive filler particles dispersed in a cross-linked polymer. The repair layer protects the multi-layer device from electrical short circuits. A multilayer device is also disclosed including a light-transmissive electrode layer comprising a porous mesh or porous spheres.

Integrated circuits for a single-molecule nucleic-acid assay platform, and methods for making such circuits are disclosed. In one example, a method includes transferring one or more carbon nanotubes to a complementary metal-oxide semiconductor (CMOS) substrate, and forming a pair of post-processed electrodes on the substrate proximate opposing ends of the one or more carbon nanotubes.

A nanotube polariton quantum dot photon source device includes a substrate. A nanotube is arranged on the substrate, and an incident light source is configured to generate an exciton-plasmon polariton excitation in the nanotube. The nanotube emits a photon in response to the generated exciton plasmon polariton excitation. The nanotube has a length L < 50 nm to emit one or more photons at a desired frequency.

A method of making N-type semiconductor layer includes following steps. An insulating substrate is provided. An MgO layer is deposited on the insulating substrate. A first dielectric layer is formed by acidizing the MgO layer. A semiconductor carbon nanotube layer is formed to cover the MgO layer. A source electrode and drain electrode are formed to be electrically connected to the semiconductor carbon nanotube layer. A second dielectric layer is applied on the semiconductor carbon nanotube layer. A gate electrode is formed on the second dielectric layer.

The present invention relates to a light extracting substrate for an organic light emitting device, a method of manufacturing same, and an organic light emitting device including same and, more particularly, to: a light extracting substrate for an organic light emitting device, the light extracting substrate being capable of not only maximizing the light extraction efficiency of an organic light emitting device through an undulating structure formed on a surface contacting the organic light emitting device and through a scattering structure having a maximized refractive index difference, but also of being manufactured through a simple process constituted of anode oxidation and wet coating; a method of manufacturing same; and an organic light emitting device including same. To this end, the present invention provides a light extracting substrate for an organic light emitting device, a method of manufacturing same, and an organic light emitting device including same, the light extracting substrate characterized by comprising: a base substrate; a plurality of nanotubes formed on the base substrate; and a coating layer formed on the plurality of nanotubes, sealing the top of the plurality of nanotubes, forming an air layer inside each of the plurality of nanotubes, and having undulations formed on the surface thereof due to capillary action induced by the plurality of nanotubes during forming.

A field effect transistor and a sensor using the field effect transistor is provided. The field effect transistor can be manufactured so as to have uniform properties by simple steps at low costs, and can stably detect, when used as a sensor, a very small amount of analyte with a high sensitivity while the properties are hardly deteriorated. A channel of the field effect transistor is constituted by a single-walled carbon nanotube thin film that is grown, by a chemical vapor deposition method, using particles of a nonmetallic material as growth nuclei, the nonmetallic material containing 500 mass ppm or less metallic impurities that contain a metal and its compounds.

The present invention discloses a CNFET double-edge pulse JKL flip-flop, comprising a double-edge pulse signal generator, 31 CNFET tubes, 6 NTI gate circuits having the same circuit structure, 6 PTI gate circuits having the same circuit structure as well as the 1.sup.st and 2.sup.nd two-value inverters having the same circuit structure; it features in correct logic functions as well as high-speed and low power consumption.

Provided are a luminous member, a method of driving the luminous member, a non-volatile memory device, a sensor, a method of driving the sensor, and a display apparatus. The luminous member includes a first electrode; a second electrode facing the first electrode; an emission layer, which is disposed on a main surface of the first electrode and emits light by power applied between the first electrode and the second electrode; and a ferrodielectric layer disposed between the emission layer and the second electrode, wherein AC power applied to the luminous member is controlled based on polarity or magnitude of a residual polarization generated in the ferrodielectric layer, thereby adjusting emission characteristics of the emission layer.

A method for forming an organic thin film transistor is provided. An organic semiconductor layer, a source electrode, a drain electrode, a gate electrode, and an insulating layer are formed on an insulating substrate. A method for forming the organic semiconductor layer is provided. An evaporating source is provided, and the evaporating source and the insulating substrate are spaced from each other. The carbon nanotube film structure is heated to gasify the organic semiconductor material to form the organic semiconductor layer on a depositing surface.

A method for constructing a solar rectenna array by growing carbon nanotube antennas between lines of metal, and subsequently applying a bias voltage on the carbon nanotube antennas to convert the diodes on the tips of the carbon nanotube antennas from metal oxide carbon diodes to geometric diodes. Techniques for preserving the converted diodes by adding additional oxide are also described.