A method and structure for a transfer process for an acoustic resonator device. In an example, a bulk acoustic wave resonator (BAWR) with an air reflection cavity is formed. A piezoelectric thin film is grown on a crystalline substrate. Patterned electrodes are deposited on the surface of the piezoelectric film. An etched sacrificial layer is deposited over the electrodes and a planarized support layer is deposited over the sacrificial layer. The device can include temperature compensation layers (TCL) that improve the device TCF. These layers can be thin layers of oxide type materials and can be configured between the top electrode and the piezoelectric layer, between the bottom electrode and the piezoelectric layer, between two or more piezoelectric layers, and any combination thereof. In an example, the TCLs can be configured from thick passivation layers overlying the top electrode and/or underlying the bottom electrode.

A piezoelectric element, a piezoelectric vibrator and a manufacturing method thereof, and an electronic device, a piezoelectric structure is arranged on a first electrode, and a second electrode is arranged on the piezoelectric structure, wherein the second electrode includes a conductive layer and an anti-oxidation layer arranged on the piezoelectric structure in sequence. The conductive layer is configured to generate, when a breakdown short circuit occurs in the piezoelectric element, solid solution between a breakdown location of the piezoelectric element and anti-oxidation layer, and oxidize to generate an insulating material. The conductive layer and anti-oxidation layer are used as top electrodes of the piezoelectric element, when the breakdown short circuit occurs in the piezoelectric structure of the piezoelectric element, the conductive layer is melted by a huge amount of heat generated by the short circuit, a solid solution is formed by the anti-oxidation layer and the conductive layer.

A surface acoustic wave (SAW) device including a substrate is provided. Multiple surface acoustic wave elements are disposed on the substrate. A conductive surrounding structure includes: a wall part, disposed on the substrate and surrounding the surface acoustic wave elements; and a lateral layer part, disposed on the wall part. The lateral layer part has an opening above the surface acoustic wave elements. A cap layer covers the lateral layer part and closes the opening.

An acoustic wave device includes a support including a support substrate, a piezoelectric layer on the support, and an IDT electrode on a first main surface of the piezoelectric layer, wherein the support includes an air gap portion opened on a piezoelectric layer side, the support includes an inner side wall facing the air gap portion, and a high thermal conductive film is directly or indirectly laminated on at least a portion of a second main surface of the piezoelectric layer and extends to the inner side wall of the support.

--A piezoelectric transducer including a piezoelectric element and an encapsulation which encloses the piezoelectric element. The encapsulation is configured to set the electro-mechanical properties of the transducer. For example, the hardness of a material of the encapsulation and/or or the geometry of the encapsulation is suitably selected.--

--A piezoelectric transducer including a piezoelectric element and an encapsulation which encloses the piezoelectric element. The encapsulation is configured to set the electro-mechanical properties of the transducer. For example, the hardness of a material of the encapsulation and/or or the geometry of the encapsulation is suitably selected.--

According to various embodiments, a PMUT device may include a wafer, an active layer including a piezoelectric stack, an intermediate layer having a cavity therein where the intermediate layer is disposed between the wafer and the active layer such that the cavity is adjoining the piezoelectric stack. A via may be formed through the active layer and the intermediate layer to the wafer. A metallic layer may be disposed over the active layer and over surfaces of the via. The intermediate layer may include an interposing material surrounding the cavity, and may further include a sacrificial material surrounding the via. The sacrificial material may be different from the interposing material. The metallic layer may include a first member at least substantially overlapping the piezoelectric stack, a second member extending from the first member to the cavity, and a third member extending into the active layer to contact an electrode therein.

Energy harvesters (EH) which can effectively harvest wasted vibrational/kinematic energy and convert it into electrical energy for battery-free sensor operation are described herein. The energy harvesters can be integrated with a power management circuit and a wireless sensor for monitoring wind turbine blades. The target application of the energy harvesters includes powering the wireless sensors used for wind turbine blade structural monitoring.

Energy harvesters (EH) which can effectively harvest wasted vibrational/kinematic energy and convert it into electrical energy for battery-free sensor operation are described herein. The energy harvesters can be integrated with a power management circuit and a wireless sensor for monitoring wind turbine blades. The target application of the energy harvesters includes powering the wireless sensors used for wind turbine blade structural monitoring.

A production method for a surface acoustic wave device comprises the following steps: a step of providing a piezoelectric substrate comprising a transducer arranged on the main front face; a step of depositing a dielectric encapsulation layer on the main front face of the piezoelectric substrate and on the transducer; and a step of assembling the dielectric encapsulation layer with the main front face of a support substrate having a coefficient of thermal expansion less than that of the piezoelectric substrate. In additional embodiments, a surface acoustic wave device comprises a layer of piezoelectric material equipped with a transducer on a main front face, arranged on a substrate support of which the coefficient of thermal expansion is less than that of the piezoelectric material. The transducer is arranged in a dielectric encapsulation layer, between the layer of piezoelectric material and the support substrate.