The invention concerns an inteconnect device for interconnection between lines of superconducting material at least one via in contact with those lines, comprising:

a) a first substrate, which carries at least one first line of a first superconducting material;
b) at least one first via of a second superconducting material, different from the first superconducting material, said at least one first line being disposed between said first substrate and said first via;
c) at least one second line above said first via and in contact with the latter.

A vertical Josephson Junction (JJ) qubit device that is fabricated from crystalline silicon material is provided. The JJ device has a substrate of epitaxial silicon, a lower superconducting electrode that is a superconducting region of the epitaxial silicon and an upper superconducting electrode of a metallic superconductor. The JJ device also has a junction layer. A section of the junction layer between the lower and upper superconducting electrodes forms a junction of the JJ device. Resonator and/or capacitor wiring of the JJ device is also fabricated using the metallic superconductor. The superconducting region is epitaxial silicon that is doped or implanted with boron or gallium. The substrate, the junction layer, and the implanted epitaxial silicon share a contiguous crystalline structure.

A vertical Josephson Junction (JJ) qubit device that is fabricated from crystalline silicon material is provided. The JJ device has a substrate of epitaxial silicon, a lower superconducting electrode that is a superconducting region of the epitaxial silicon and an upper superconducting electrode of a metallic superconductor. The JJ device also has a junction layer. A section of the junction layer between the lower and upper superconducting electrodes forms a junction of the JJ device. Resonator and/or capacitor wiring of the JJ device is also fabricated using the metallic superconductor. The superconducting region is epitaxial silicon that is doped or implanted with boron or gallium. The substrate, the junction layer, and the implanted epitaxial silicon share a contiguous crystalline structure.

A Josephson Junction qubit device is provided. The device includes a substrate of silicon material. The device includes first and second electrodes of superconducting metal. The device may include a nanowire created by direct ion implantation on to the silicon material to connect the first and second electrodes. The device may include first and second superconducting regions created by direct ion implantation on to the silicon material, the first superconducting region connecting the first electrode and the second superconducting region connecting the second electrode, with a silicon channel formed by a gap between the first and second superconducting regions.

A Josephson Junction qubit device is provided. The device includes a substrate of silicon material. The device includes first and second electrodes of superconducting metal. The device may include a nanowire created by direct ion implantation on to the silicon material to connect the first and second electrodes. The device may include first and second superconducting regions created by direct ion implantation on to the silicon material, the first superconducting region connecting the first electrode and the second superconducting region connecting the second electrode, with a silicon channel formed by a gap between the first and second superconducting regions.

A superconducting article includes a substrate and a superconducting metal oxide film formed on the substrate. The metal oxide film including ions of an alkali metal, ions of a transition metal, and ions of an alkaline earth metal or a rare earth metal. For instance, the metal oxide film can include Rb ions, La ions, and Cu ions. The superconducting metal oxide film can have a critical temperature for onset of superconductivity of greater than 250 K, e.g., greater than room temperature.

A superconductive cable including: a former; one or more superconductive conductor layers provided outside the former; an insulating layer configured to surround the superconductive conductor layers; and one or more superconductive shield layers provided on an exterior of the insulating layer. The superconductive conductor layers and the superconductive shield layers are formed of superconductive wire rods, and each superconductive wire rod includes a metal substrate layer and a plurality of superconducting layers deposited on the metal substrate layer using a superconductive material. In the superconductive wire rods of an outermost superconductive conductor layer among the superconductive conductor layers and an innermost superconductive shield layer among the superconductive shield layers, each of the metal substrate layers and the superconducting layers are disposed in opposite directions.

In various embodiments, superconducting wires incorporate diffusion barriers composed of Ta alloys that resist internal diffusion and provide superior mechanical strength to the wires.

In various embodiments, superconducting wires incorporate diffusion barriers composed of Ta alloys that resist internal diffusion and provide superior mechanical strength to the wires.

Superconducting integrated circuits and methods of forming these circuits are discussed. One superconducting integrated circuit has a substrate and a control device formed by a layer of high kinetic inductance material overlying the substrate. The control device has a loop of material, electrical connections between the loop of material and a power line, a coupling element connected to the loop of material, a pair of Josephson junctions that interrupt the loop of material, and an energy storage element connected to the loop of material. An alternative superconducting integrated circuit has a kinetic inductance device formed in a high kinetic inductance layer. The device has a compound Josephson junction structure with two parallel current paths with respective Josephson junctions, a loop of material connected to the compound Josephson junction structure, and a coupling structure. The circuit also has an additional device that couples to the coupling structure.