A multilayer electronic device may include a plurality of dielectric layers stacked in a Z-direction that is perpendicular to an X-Y plane. The device may include a first conductive layer overlying one of the plurality of dielectric layers. The multilayer electronic device may include a second conductive layer overlying another of the plurality of dielectric layers and spaced apart from the first conductive layer in the Z-direction. The second conductive layer may overlap the first conductive layer in the X-Y plane at an overlapping area to form a capacitor. The first conductive layer may have a pair of parallel edges at a boundary of the overlapping area and an offset edge within the overlapping area that is parallel with the pair of parallel edges. An offset distance between the offset edge and at least one of the pair of parallel edges may be less than about 500 microns.

A multilayer ceramic capacitor includes a stacked body and external electrodes. The stacked body includes stacked dielectric layers and internal electrodes. The external electrodes are disposed on lateral surfaces of the stacked body and are connected to the internal electrodes. The dielectric layers include outer layer portions and an effective layer portion. Each outer layer portion is adjacent to a corresponding main surface of the stacked body. Each outer layer portion is a dielectric layer located between a corresponding main surface and an internal electrode closest to the main surface. A ratio of a dimension of the effective layer portion in a stacking direction to a dimension of the stacked body in the stacking direction is not less than about 53% and not more than about 83%.

A multilayer ceramic capacitor includes a stacked body and external electrodes. The stacked body includes stacked dielectric layers and internal electrodes. The external electrodes are disposed on lateral surfaces of the stacked body and are connected to the internal electrodes. The dielectric layers include outer layer portions and an effective layer portion. Each outer layer portion is adjacent to a corresponding main surface of the stacked body. Each outer layer portion is a dielectric layer located between a corresponding main surface and an internal electrode closest to the main surface. A ratio of a dimension of the effective layer portion in a stacking direction to a dimension of the stacked body in the stacking direction is not less than about 53% and not more than about 83%.

A MIM structure and manufacturing method thereof are provided. The MIM structure includes a substrate having a first surface and a metallization structure over the substrate. The metallization structure includes a bottom electrode layer, a dielectric layer on the bottom electrode layer, a ferroelectric layer on the dielectric layer, a top electrode layer on the ferroelectric layer, a first contact electrically coupled to the top electrode layer, and a second contact penetrating the dielectric layer and the ferroelectric layer, electrically coupled to the bottom electrode layer.

A nanowire structure that includes a conductive layer; conductive wires having first ends that contact the conductive layer and second ends that protrude from the conductive layer; and a lateral bridge layer that connects laterally a number of the conductive wires to provide a substantially uniform spacing between the conductive wires.

A nanowire structure that includes a conductive layer; conductive wires having first ends that contact the conductive layer and second ends that protrude from the conductive layer; and a lateral bridge layer that connects laterally a number of the conductive wires to provide a substantially uniform spacing between the conductive wires.

A multilayer ceramic capacitor includes: a multilayer chip in which dielectric layers mainly composed of ceramic and internal electrode layers are alternately stacked so that the internal electrode layers are alternately exposed to two end faces of the multilayer chip having a substantially rectangular parallelepiped shape; and a pair of external electrodes formed from the two end faces to at least one side face of side faces, wherein each external electrode includes a metal layer formed from the end face to the at least one side face and mainly composed of copper, and an oxide layer covering at least a part of the metal layer, mainly composed of copper oxide, and having a maximum thickness of 0.5 μm or greater, wherein a first surface, which is in contact with the plated layer, of the oxide layer has Cu particles formed thereon.

A multilayer ceramic capacitor includes: a multilayer chip in which dielectric layers mainly composed of ceramic and internal electrode layers are alternately stacked so that the internal electrode layers are alternately exposed to two end faces of the multilayer chip having a substantially rectangular parallelepiped shape; and a pair of external electrodes formed from the two end faces to at least one side face of side faces, wherein each external electrode includes a metal layer formed from the end face to the at least one side face and mainly composed of copper, and an oxide layer covering at least a part of the metal layer, mainly composed of copper oxide, and having a maximum thickness of 0.5 μm or greater, wherein a first surface, which is in contact with the plated layer, of the oxide layer has Cu particles formed thereon.

The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; a bottom conductive layer positioned on the substrate; at least one bottom conductive protrusion positioned on the bottom conductive layer; an insulator layer positioned on the bottom conductive layer and the at least one bottom conductive protrusion; at least one bottom insulating protrusion protruding from the insulator layer towards the bottom conductive layer and adjacent to the at least one bottom conductive protrusion; and a top conductive layer positioned on the insulator layer. The bottom conductive layer, the at least one bottom conductive protrusion, the insulator layer, the at least one bottom insulating protrusion, and the top conductive layer together configure a capacitor structure.

The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; a bottom conductive layer positioned on the substrate; at least one bottom conductive protrusion positioned on the bottom conductive layer; an insulator layer positioned on the bottom conductive layer and the at least one bottom conductive protrusion; at least one bottom insulating protrusion protruding from the insulator layer towards the bottom conductive layer and adjacent to the at least one bottom conductive protrusion; and a top conductive layer positioned on the insulator layer. The bottom conductive layer, the at least one bottom conductive protrusion, the insulator layer, the at least one bottom insulating protrusion, and the top conductive layer together configure a capacitor structure.