A semiconductor device includes: a first electrode; a second electrode; and a multi-layered stack including a hafnium oxide layer of a tetragonal crystal structure which is positioned between the first electrode and the second electrode, wherein the multi-layered stack includes: a seed layer for promoting tetragonal crystallization of the hafnium oxide layer and having a tetragonal crystal structure; and a booster layer for boosting a dielectric constant of the hafnium oxide layer.

A solid state electrical energy state storage device includes multiple dielectric layers or an integral heterogeneous dielectric layer. Layers or portions of the heterogeneous layer have permittivity augmented by exposing the dielectric material to electric/magnetic fields during formation of the dielectric before complete solidification. Such exposure results in radicals and/or an ordered matrix. A dielectric for the device may contain a new xylene based polymer formed under atmospheric conditions via reaction with monatomic oxygen and provided an augmented permittivity through exposure of the polymer to a magnetic field and/or an electric field during condensation and solidification on a substrate.

A solid state electrical energy state storage device includes multiple dielectric layers or an integral heterogeneous dielectric layer. Layers or portions of the heterogeneous layer have permittivity augmented by exposing the dielectric material to electric/magnetic fields during formation of the dielectric before complete solidification. Such exposure results in radicals and/or an ordered matrix. A dielectric for the device may contain a new xylene based polymer formed under atmospheric conditions via reaction with monatomic oxygen and provided an augmented permittivity through exposure of the polymer to a magnetic field and/or an electric field during condensation and solidification on a substrate.

Disclosed herein is a method of: placing between a cooling element and an opposing surface a slurry of: a dielectric powder containing barium titanate, a dispersant, a binder, and water; maintaining the cooling element at a temperature below the opposing surface to cause the formation of ice platelets perpendicular to the surface of the cooling element and having the powder between the platelets; subliming the ice platelets to create voids; sintering the powder to form the dielectric material; and filling the voids with the polymeric material. The process can produce a composite having: a sintered dielectric material of barium titanate and platelets of a polymeric material embedded in the dielectric material. Each of the platelets is perpendicular to a surface of the composite.

A method of producing a multilayer ceramic electronic component includes a lamination step of producing a laminate by laminating green sheets each with an internal electrode layer formed thereon, an isotropic pressing step of subjecting the laminate to isotropic pressing, a flattening step of shaving one or both of main surfaces of the isotropic pressed laminate to flatten the one or both of the main surfaces of the laminate, and a rigid pressing step of pressing the flattened laminate from both of the main surfaces with a rigid body on each of the main surfaces.

An energy storage device comprises a capacitor having a dielectric between opposite electrodes and a nonconductive coating between at least one electrode and the dielectric. The nonconductive coating allows for much higher voltages to be employed than in traditional EDLCs, which significantly increases energy stored in the capacitor. Viscosity of the dielectric material may be increased or decreased in a controlled manner, such as in response to an applied external stimulus, to control discharge and storage for extended periods of time.

The present invention provides a resin composition comprising: 1 to 20 parts by weight of a reinforcing fiber; 0.2 to 5 parts by weight of an anti-settling agent; 20 to 40 parts by weight of an epoxy resin; 0.1 to 3 parts by weight of a curing agent; and 50 to 75 parts by weight of a high dielectric constant filler. The present invention further provides a dielectric layer produced from the resin composition and a capacitor comprising the dielectric layer. In the dielectric layer made from the resin composition provided by the present invention, the fibers can be evenly dispersed and can enhance the mechanical strength of the resin composition, and cooperate with the epoxy resin to bring excellent toughness. Therefore, the mechanical strength of the produced dielectric layer can be remarkably improved, and its fragility can be effectively overcome when the dielectric layer is used in the PCB double-side etching process.

A film capacitor that includes a laminate having a first resin film including a first metal layer on a surface thereof alternately laminated with a second resin film including a second metal layer on a surface thereof, the laminate having opposed first and second ends, a first external electrode on the first end of the laminate, and a second external electrode on the second end of the laminate, wherein the first resin film protrudes more than the second resin film by a first protruding length of 0.5 mm to 3 mm on the first end of the laminate, and the first resin film has a Young's modulus at 150° C. of 0.6 GPa or more in a direction perpendicular to a lamination direction of the laminate and parallel to a direction from the first end to the second end of the laminate.

A method of forming a memory cell material comprises forming a first portion of a dielectric material over a substrate by atomic layer deposition. Discrete conductive particles are formed on the first portion of the dielectric material by atomic layer deposition. A second portion of the dielectric material is formed on and between the discrete conductive particles by atomic layer deposition. A memory cell material, a method of forming a semiconductor device structure, and a semiconductor device structure are also described.

The present invention discloses an electrostatic energy storage device and a preparation method thereof. The device comprises at least one electrostatic energy storage unit, wherein each electrostatic energy storage unit is provided with a five-layer structure and comprises two metal film electrodes which form a capacitor, composite nano insulating film layers attached to the inner sides of the two metal film electrodes, and a ceramic nano crystalline film arranged between the composite nano insulating film layers. Based on the electrostatic parallel-plate induction capacitor principle, the metal film electrodes with a nano microstructure and the ceramic nano crystalline film sandwiched between the metal film electrodes and having an ultrahigh dielectric constant form an electrostatic induction plate capacitor to store electrostatic energy.